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...ch is for UHB-LED and LD. Grown by hydride vapour phase epitaxy (HVPE) technology,Our GaN substrate has low defect density and less or free macro defect density. PAM-XIAMEN offers full range of GaN and Related III-N Materials including GaN substrates of
...ch is for UHB-LED and LD. Grown by hydride vapour phase epitaxy (HVPE) technology,Our GaN substrate has low defect density and less or free macro defect density. PAM-XIAMEN offers full range of GaN and Related III-N Materials including GaN substrates of more
Brand Name:PAM-XIAMEN
Place of Origin:China
Minimum Order Quantity:1-10,000pcs
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...LED, mocvd Gallium Nitride wafer 10x10mm,5x5mm, 10x5mm GaN wafer,Non-Polar Freestanding GaN Substrates(a-plane and m-plane) 4inch 2inch free-standing GaN substrates HVPE GaN Wafers GaN Wafer Characteristic III-Nitride(GaN,AlN,InN) Gallium Nitride is one
...LED, mocvd Gallium Nitride wafer 10x10mm,5x5mm, 10x5mm GaN wafer,Non-Polar Freestanding GaN Substrates(a-plane and m-plane) 4inch 2inch free-standing GaN substrates HVPE GaN Wafers GaN Wafer Characteristic III-Nitride(GaN,AlN,InN) Gallium Nitride is one more
Brand Name:zmkj
Model Number:GaN-FS-C-U-C50-SSP
Place of Origin:CHINA
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...GaN substrates template,GaN wafer for LeD,semiconducting Gallium Nitride Wafer for ld,GaN template, mocvd GaN Wafer,Free-standing GaN Substrates by Customized size,small size GaN wafer for LED, mocvd Gallium Nitride wafer 10x10mm,5x5mm, 10x5mm GaN wafer III-Nitride(GaN,AlN,InN) Gallium Nitride is one kind of wide-gap compound semiconductors. Gallium Nitride (GaN) substrate is a high-quality single-crystal substrate...
...GaN substrates template,GaN wafer for LeD,semiconducting Gallium Nitride Wafer for ld,GaN template, mocvd GaN Wafer,Free-standing GaN Substrates by Customized size,small size GaN wafer for LED, mocvd Gallium Nitride wafer 10x10mm,5x5mm, 10x5mm GaN wafer III-Nitride(GaN,AlN,InN) Gallium Nitride is one kind of wide-gap compound semiconductors. Gallium Nitride (GaN) substrate is a high-quality single-crystal substrate... more
Brand Name:zmkj
Model Number:GaN-2INCH 10x10mm
Place of Origin:CHINA
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GaN on Sapphire wafer manufacturer 2 Inch GaN SubstrateAs the leading manufacturer of GaN substrate, Homray Material Technology provide GaN On Sapphire wafer. The size are 2inch and 4 inch. GaN layer thickness is 4.5um±0.5um or 20um±2um. @font-face{ font...
GaN on Sapphire wafer manufacturer 2 Inch GaN SubstrateAs the leading manufacturer of GaN substrate, Homray Material Technology provide GaN On Sapphire wafer. The size are 2inch and 4 inch. GaN layer thickness is 4.5um±0.5um or 20um±2um. @font-face{ font... more
Country/Region:china
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With wide direct bandgap(3.4 eV), strong atomic bonds, high thermal conductivity and excellent radiation resistance, GaN is not only short-wave-length optoelectronic material, but also a well alternative material for high temperature semiconductor devices...
With wide direct bandgap(3.4 eV), strong atomic bonds, high thermal conductivity and excellent radiation resistance, GaN is not only short-wave-length optoelectronic material, but also a well alternative material for high temperature semiconductor devices... more
Brand Name:JOPTEC
Place of Origin:HEFEI, CHINA
Minimum Order Quantity:10 PCS
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2 inch Free-Standing GaN Substrates Dimensions:Ф 50.8 mm ± 1 mm Thickness:350 ± 25 µm Useable Surface Area:> 90% Orientation:C-plane (0001) off angle toward M-...
2 inch Free-Standing GaN Substrates Dimensions:Ф 50.8 mm ± 1 mm Thickness:350 ± 25 µm Useable Surface Area:> 90% Orientation:C-plane (0001) off angle toward M-... more
Place of Origin:China
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..., they collaborated with Kyma Technologies to produce the first free-standing GaN substrate (4 inches) based on QST substrate technology. In January 2020, Qromis received investment from Toyota Motor Corporation. Qromis has licensed this technology to two
..., they collaborated with Kyma Technologies to produce the first free-standing GaN substrate (4 inches) based on QST substrate technology. In January 2020, Qromis received investment from Toyota Motor Corporation. Qromis has licensed this technology to two more
Brand Name:Wuxi Special Ceramic
Place of Origin:China
Minimum Order Quantity:10p
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...substrate is used in GaN(blue LED) epitaxial substrate wide band connection devices and other fields Zinc oxide (ZnO) crystal substrate is widely used in GaN(blue LED) epitaxial substrate, wide band connected devices and other fields. Zinc oxide single crystal is a good substrate material for GaN...
...substrate is used in GaN(blue LED) epitaxial substrate wide band connection devices and other fields Zinc oxide (ZnO) crystal substrate is widely used in GaN(blue LED) epitaxial substrate, wide band connected devices and other fields. Zinc oxide single crystal is a good substrate material for GaN... more
Brand Name:CSIMC
Model Number:ZnO wafer
Place of Origin:China
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...GaN and ZnO heteroepitaxy recently developed with the ideal substrate material, currently it match the GaN and ZnO best in the new substrate materials.ScAlMgO4 crystals are hexagonal system,which lattice constant a = 0.3246 nm, c = 2.5195 nm, with rhombohedron layered structure, similar to wurtzite nitrides and the structure of zinc oxide.ScAlMgO4 crystal is a kind of ideal substrate
...GaN and ZnO heteroepitaxy recently developed with the ideal substrate material, currently it match the GaN and ZnO best in the new substrate materials.ScAlMgO4 crystals are hexagonal system,which lattice constant a = 0.3246 nm, c = 2.5195 nm, with rhombohedron layered structure, similar to wurtzite nitrides and the structure of zinc oxide.ScAlMgO4 crystal is a kind of ideal substrate more
Brand Name:CRYLINK
Model Number:CRYLINK-ScAlMgO4 Crystal
Place of Origin:China
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..., mainly because it has been unable to find a substrate that matches the lattice constant of GaN, resulting in the density of defects in the epitaxial crystal. Too high, until 1991, Nichia Co. researcher S. Nakamura used low-temperature growth of an
..., mainly because it has been unable to find a substrate that matches the lattice constant of GaN, resulting in the density of defects in the epitaxial crystal. Too high, until 1991, Nichia Co. researcher S. Nakamura used low-temperature growth of an more
Brand Name:Silian
Model Number:Customized
Place of Origin:Chongqing，China
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... is 1-2km. This product use the latest generation of power devices-gallium nitride(GAN), which uses a ceramic package and a copper gold-plated substrate process. This product also uses circulators and isolators, which greatly provides product stability.
... is 1-2km. This product use the latest generation of power devices-gallium nitride(GAN), which uses a ceramic package and a copper gold-plated substrate process. This product also uses circulators and isolators, which greatly provides product stability. more
Brand Name:ACASOM
Model Number:ACA-ISO-JAM2420S1
Place of Origin:Shenzhen
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...Substrate Chip Alumina Polishing Powder Alpha alumina (corundum) has high hardness and good stability. Nanoscale alumina is suitable for precision polishing of optical lenses, single core fiber connectors, microcrystalline glass substrates, crystal surfaces, etc. It has a wide range of applications. Currently, semiconductor lighting technology centered around high brightness GaN...
...Substrate Chip Alumina Polishing Powder Alpha alumina (corundum) has high hardness and good stability. Nanoscale alumina is suitable for precision polishing of optical lenses, single core fiber connectors, microcrystalline glass substrates, crystal surfaces, etc. It has a wide range of applications. Currently, semiconductor lighting technology centered around high brightness GaN... more
Brand Name:Repolix
Model Number:PL-A-1
Place of Origin:China
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.... SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the important LED components, it is a popular substrate for growing GaN devices, and it
.... SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the important LED components, it is a popular substrate for growing GaN devices, and it more
Brand Name:ANG
Model Number:SIC-W05
Place of Origin:Guangdong, China
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... selection of back grinding wheels. This particular grinding tool comes in two types: a silicon wafer back grinding wheel and an LED substrate back grinding wheel. Both of them can be used on different grinding machines made in Europe,America,Japan, and
... selection of back grinding wheels. This particular grinding tool comes in two types: a silicon wafer back grinding wheel and an LED substrate back grinding wheel. Both of them can be used on different grinding machines made in Europe,America,Japan, and more
Brand Name:HT
Model Number:HT-BGW
Place of Origin:China
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... applications . With an ideal crystal structure , ZnO wafer ( Zinc oxide ) has a 2% lattice mismatch to GaN , that is much less than the lattice mismatch of sapphire wafer and SiC wafer . ZnO wafer is one of the most suitable substrate for using as GaN
... applications . With an ideal crystal structure , ZnO wafer ( Zinc oxide ) has a 2% lattice mismatch to GaN , that is much less than the lattice mismatch of sapphire wafer and SiC wafer . ZnO wafer is one of the most suitable substrate for using as GaN more
Brand Name:ZG
Model Number:MS
Place of Origin:CHINA
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..., silicon wafer, gallium arsenide and GaN wafer. This kind of grinding wheel developed in out company can replace foreign products. They can be used steadily on the Japanese, Korean grinders with high ...
..., silicon wafer, gallium arsenide and GaN wafer. This kind of grinding wheel developed in out company can replace foreign products. They can be used steadily on the Japanese, Korean grinders with high ... more
Brand Name:SIGNI
Model Number:SS
Place of Origin:CN
