Categories | Technical Ceramic Parts |
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Brand Name: | ZG |
Model Number: | MS |
Certification: | CE |
Place of Origin: | CHINA |
MOQ: | 1 piece |
Price: | USD10/piece |
Payment Terms: | L/C, D/A, D/P, T/T, Western Union, MoneyGram |
Supply Ability: | 10000 pieces per month |
Delivery Time: | 3 working days |
Packaging Details: | Strong wooden box for Global shipping |
Application: | power device , LED , sensor and detector |
Diameter: | Ø 1" / Ø 2" / Ø 3" / Ø 4"/ Ø 6" |
Thickness: | 330 um ~ 350 um |
Grade: | Production grade / Research grade |
ZnO Wafer, CdS wafer, CdSe wafer, CdTe wafer, ZnS wafer, ZnSe wafer and ZnTe wafer
We provides high purity single crystal ZnO wafer and ZnO bulk for power device , LED , sensor and detector applications . With an ideal crystal structure , ZnO wafer ( Zinc oxide ) has a 2% lattice mismatch to GaN , that is much less than the lattice mismatch of sapphire wafer and SiC wafer . ZnO wafer is one of the most suitable substrate for using as GaN epitaxial growth and wide band gap semiconductor application . ZnO wafer are supplied in square shape , undoped , size 10 x 10 x 0.5 mm , double sides polished surface finish and oriented , our high quality ZnO wafer have been widely used for the growth of
nitride base devices . Please contact us for more product information .
ZnO Wafer Application
GaN epitaxial growth | UV detectors |
Power devices | Light-emitting devices |
Photovoltaic | Sensors |
ZnO Wafer Properties
Chemical formula | ZnO |
Crystal structure | Hexagonal |
Lattice constant | 3.3 A |
Lattice mismatch with GaN in <0001> plane | 9 |
Thermal conductivity | 0.006 cal / cm /K |
Refractive index | 2.0681 / 2.0510 |
Identified polished face | Zn - face / O - face |
Product Specification
Growth | Hydrothermal |
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ZnO bulk / block | 26.5 x 26.5 x 10 mm |
ZnO wafer | 10 x 10 x 0.5 mm |
Orientation | Zn face <0001> / O face <000-1> |
Resistivity | 500 - 1000 ohm-cm |
Surface | two sides polished |
Roughness | Ra <= 10 A |
Package | Membrance box |
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