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...YT Original MOSFET/IGBT/Diode Switching/Transistor IC Chips Description AP4434A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the ...
...YT Original MOSFET/IGBT/Diode Switching/Transistor IC Chips Description AP4434A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the ... more
Brand Name:Hua Xuan Yang
Model Number:AP4434AGYT-HF
Place of Origin:Shenzhen, China
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...IGBT/Diode Switching/Transistor IC Chips Small MOQ , Wholesale price , Fast delivery . Product details Type IGBT transistor Conditional New and original MOQ 10pieces SPQ 50 pieces PAYMENT T/T , PAYPAL ,WESTERN UNION,ALIPAY Shipment DHL . FEDEX , UPS , EMS , POST Product Keywords MTB15P04J3 all kinds of IGBT transistor...
...IGBT/Diode Switching/Transistor IC Chips Small MOQ , Wholesale price , Fast delivery . Product details Type IGBT transistor Conditional New and original MOQ 10pieces SPQ 50 pieces PAYMENT T/T , PAYPAL ,WESTERN UNION,ALIPAY Shipment DHL . FEDEX , UPS , EMS , POST Product Keywords MTB15P04J3 all kinds of IGBT transistor... more
Brand Name:Original
Model Number:MTB15P04J3
Place of Origin:Original
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PrimePACK™ 2 1200 V, 600 A half-bridge dual IGBT module with TRENCHSTOP™ IGBT4, Emitter Controlled 4 diode,FF600R12IE4 You have been redirected from search results. Not what you are looking for? See results for‘FF600R12IE4’. Overview Buy online FF600R12IE4...
PrimePACK™ 2 1200 V, 600 A half-bridge dual IGBT module with TRENCHSTOP™ IGBT4, Emitter Controlled 4 diode,FF600R12IE4 You have been redirected from search results. Not what you are looking for? See results for‘FF600R12IE4’. Overview Buy online FF600R12IE4... more
Brand Name:Infineon Technologies
Model Number:FF600R12IE4
Place of Origin:Hungary
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..., specialize in selling the new and unused, original factory sealed packing electronic components. specialize in IC,MCU,Memory,Module,diode,transistor,IGBT,PCBA, prototype,BOM Kitting. Sunbeam Electronics has
..., specialize in selling the new and unused, original factory sealed packing electronic components. specialize in IC,MCU,Memory,Module,diode,transistor,IGBT,PCBA, prototype,BOM Kitting. Sunbeam Electronics has more
Brand Name:ONSEMI
Model Number:NUS5530MN
Place of Origin:China
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...IGBT Transistor N-Channel with Built in Diode 600V 40A 160W, TO-3P Descriptions: Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature. Features : • High speed switching...
...IGBT Transistor N-Channel with Built in Diode 600V 40A 160W, TO-3P Descriptions: Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature. Features : • High speed switching... more
Brand Name:ON/Fairchild
Model Number:G40N60UFD
Place of Origin:Original Factory
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...15 A TRENCHSTOP™ IGBT co-packed with free-wheeling diode in a TO-247 package provides significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of IGBT with
...15 A TRENCHSTOP™ IGBT co-packed with free-wheeling diode in a TO-247 package provides significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of IGBT with more
Brand Name:Infineon
Model Number:IKW15N120T2
Place of Origin:Original Factory
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...IGBT 31 A 600 V very fast IGBT with Ultrafast diode Transistors - IGBTs - Single 31 A, 600 V, very fast IGBT with Ultrafast diode Product details Description : This device is an ultrafast IGBT. It utilizes the advanced Power MESH™ process resulting in an excellent trade-off between switching...
...IGBT 31 A 600 V very fast IGBT with Ultrafast diode Transistors - IGBTs - Single 31 A, 600 V, very fast IGBT with Ultrafast diode Product details Description : This device is an ultrafast IGBT. It utilizes the advanced Power MESH™ process resulting in an excellent trade-off between switching... more
Brand Name:STMicroelectronics
Model Number:STGWA19NC60HD GWA19NC60HD
Place of Origin:CHINA
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...Igbt Power Module Transistors NGTB40N120SWG Charging Pile Inverter Welding Chip App Characteristics TJmax = 175°C • Soft Fast Reverse Recovery Diode Optimized for High Speed Switching 10 us Short Circuit Capability These are Pb−Free Devices Basic Data Product Attribute Attribute Value Manufacturer: onsemi Product Category: IGBT Transistors...
...Igbt Power Module Transistors NGTB40N120SWG Charging Pile Inverter Welding Chip App Characteristics TJmax = 175°C • Soft Fast Reverse Recovery Diode Optimized for High Speed Switching 10 us Short Circuit Capability These are Pb−Free Devices Basic Data Product Attribute Attribute Value Manufacturer: onsemi Product Category: IGBT Transistors... more
Brand Name:onsemi
Model Number:NGTB40N120SWG
Minimum Order Quantity:Negotiable
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...IGBT Anti-Parallel Hyperfast Diode 43A 1200V Description : The HGTG11N120CND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT...
...IGBT Anti-Parallel Hyperfast Diode 43A 1200V Description : The HGTG11N120CND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT... more
Brand Name:FSC
Model Number:HGTG11N120CND
Place of Origin:USA
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WG50N65DHWQ IGBT Trench Field Stop 650 V 91 A 278 W Through Hole TO-247-3 WeEn Semiconductors WG50N65DHWQ IGBT WeEn Semiconductors WG50N65DHWQ IGBT is a high-speed 650V/50A IGBT with an anti-parallel diode in a TO247 package. This IGBT offers high-speed...
WG50N65DHWQ IGBT Trench Field Stop 650 V 91 A 278 W Through Hole TO-247-3 WeEn Semiconductors WG50N65DHWQ IGBT WeEn Semiconductors WG50N65DHWQ IGBT is a high-speed 650V/50A IGBT with an anti-parallel diode in a TO247 package. This IGBT offers high-speed... more
Brand Name:WeEn Semiconductors
Model Number:WG50N65DHWQ
Minimum Order Quantity:50pcs
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1DI300MP-050-01 is a POWER TRANSISTOR MODULE Mega Source Elec. Limited promises: Only 100% New and Original parts Lowest Price & Quickly Delivery Buy more can enjoy a super cheap price Excellent after service and good quality We also purchase the excess...
1DI300MP-050-01 is a POWER TRANSISTOR MODULE Mega Source Elec. Limited promises: Only 100% New and Original parts Lowest Price & Quickly Delivery Buy more can enjoy a super cheap price Excellent after service and good quality We also purchase the excess... more
Brand Name:Standard Brand
Model Number:1DI300MP-050-01
Place of Origin:MALAYSIA
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New Insulated Gate Bipolar Transistor (IGBT) For B2B Buyers Product Description: An Insulated Gate Bipolar Transistor (IGBT) is a new and versatile electronic device with insulated gate, designed for use in general purpose applications. This device is ...
New Insulated Gate Bipolar Transistor (IGBT) For B2B Buyers Product Description: An Insulated Gate Bipolar Transistor (IGBT) is a new and versatile electronic device with insulated gate, designed for use in general purpose applications. This device is ... more
Brand Name:MMR
Place of Origin:China
Mounting Type:Through Hole
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...IGBT Anti-Parallel Hyperfast Diode 43A 1200V Description : The HGTG11N120CND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT...
...IGBT Anti-Parallel Hyperfast Diode 43A 1200V Description : The HGTG11N120CND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT... more
Brand Name:FSC
Model Number:HGTG11N120CND
Place of Origin:USA
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...Applications Description: TrenchStop® Reverse Conducting (RC-)IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • Trench and Fieldstop technology for 1600 V
...Applications Description: TrenchStop® Reverse Conducting (RC-)IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • Trench and Fieldstop technology for 1600 V more
Brand Name:Infineon Technoctifier Ilogies/International ReOR
Model Number:IHW30N160R2FKSA1
Minimum Order Quantity:1 piece
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... with anti-parallel diode in TO-247 package with EC7 diode inside. Specification Of IKW40N120CS7XKSA1 Part Number: IKW40N120CS7XKSA1 Product Category: IGBT Transistors Technology: Si Package / Case: TO-247-3 Mounting Style: Through Hole Configuration:
... with anti-parallel diode in TO-247 package with EC7 diode inside. Specification Of IKW40N120CS7XKSA1 Part Number: IKW40N120CS7XKSA1 Product Category: IGBT Transistors Technology: Si Package / Case: TO-247-3 Mounting Style: Through Hole Configuration: more
Brand Name:Original Factory
Model Number:IKW40N120CS7XKSA1
Place of Origin:CN
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...TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • Low VCE (ON) Trench IGBT Technology • Low Switching Losses • Maximum Junction temperature 175 °C • 5 µS short circuit SOA • Square RBSOA • 100% of the parts tested for 4X rated current (ILM) • Positive VCE (ON) Temperature co-efficient • Ultra-low VF Hyperfast Diode...
...TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • Low VCE (ON) Trench IGBT Technology • Low Switching Losses • Maximum Junction temperature 175 °C • 5 µS short circuit SOA • Square RBSOA • 100% of the parts tested for 4X rated current (ILM) • Positive VCE (ON) Temperature co-efficient • Ultra-low VF Hyperfast Diode... more
Brand Name:Anterwell
Model Number:GP4068D
Place of Origin:original factory
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...Transistor Assembly The Ultimate Solution for Power Management Product Description: The Insulated Gate Bipolar Transistor Module, commonly known as IGBT Module, is a crucial component in electronic circuits, offering efficient power control and switching capabilities. This versatile module combines the features of an Insulated Gate Transistor and Diode...
...Transistor Assembly The Ultimate Solution for Power Management Product Description: The Insulated Gate Bipolar Transistor Module, commonly known as IGBT Module, is a crucial component in electronic circuits, offering efficient power control and switching capabilities. This versatile module combines the features of an Insulated Gate Transistor and Diode... more
Brand Name:KRUNTER
Model Number:KUP40H12R4-7M
Place of Origin:CHINA
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Buy HGTG11N120CND: The Ultimate Solution for High-Power Switching Pros and Cons of HGTG11N120CND: Is it Worth the Investment? Are you looking for a reliable high-power switching solution? Look no further than HGTG11N120CND. This device is designed to ...
Buy HGTG11N120CND: The Ultimate Solution for High-Power Switching Pros and Cons of HGTG11N120CND: Is it Worth the Investment? Are you looking for a reliable high-power switching solution? Look no further than HGTG11N120CND. This device is designed to ... more
Brand Name:Fairchild
Model Number:HGTG11N120CND
Part number:HGTG11N120CND
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...a variety of applications. This module features an insulated-gate bipolar transistor (IGBT) with a freewheeling diode. It is capable of delivering high current control, high switching speeds, and low power losses. With its wide range of operating voltages,
...a variety of applications. This module features an insulated-gate bipolar transistor (IGBT) with a freewheeling diode. It is capable of delivering high current control, high switching speeds, and low power losses. With its wide range of operating voltages, more
Brand Name:International Rectifier
Model Number:IRG4BC20FDPBF
Place of Origin:original
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FGD3N60UNDF IGBT NPT 600 V 6 A 60 W Surface Mount TO-252AA Datasheet:FGD3N60UNDF Category Single IGBTs Mfr onsemi Product Status Obsolete IGBT Type NPT Voltage - Collector Emitter Breakdown (Max) 600 V Current - Collector (Ic) (Max) 6 A Current - Collector...
FGD3N60UNDF IGBT NPT 600 V 6 A 60 W Surface Mount TO-252AA Datasheet:FGD3N60UNDF Category Single IGBTs Mfr onsemi Product Status Obsolete IGBT Type NPT Voltage - Collector Emitter Breakdown (Max) 600 V Current - Collector (Ic) (Max) 6 A Current - Collector... more
Brand Name:onsemi
Model Number:FGD3N60UNDF
Place of Origin:United States
