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FGD3N60UNDF Discrete Semiconductor Products IGBT NPT 600V 6 A 60W Surface Mount TO-252AA

Categories Diode Transistor
Brand Name: onsemi
Model Number: FGD3N60UNDF
Certification: RoHS
Place of Origin: United States
MOQ: 2500PCS
Price: Negotiable
Payment Terms: L/C, D/A, D/P, T/T
Supply Ability: 2.5K PCS
Delivery Time: 2-3 DAYS
Packaging Details: 2500PCS/Tape
Manufacturer: onsemi
Category: Single IGBTs
Product Number: FGD3N60UNDF
IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 6A
Current - Collector Pulsed (Icm): 9A
Vce(on) (Max) @ Vge, Ic: 2.52V @ 15V, 3A
Power - Max: 60W
Switching Energy: 52µJ (on), 30µJ (off)
Input Type: Standard
Gate Charge: 1.6 nC
Td (on/off) @ 25°C: 5.5ns/22ns
Test Condition: 400V, 3A, 10Ohm, 15V
Reverse Recovery Time (trr): 21 ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
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FGD3N60UNDF Discrete Semiconductor Products IGBT NPT 600V 6 A 60W Surface Mount TO-252AA

FGD3N60UNDF IGBT NPT 600 V 6 A 60 W Surface Mount TO-252AA


Datasheet:FGD3N60UNDF

CategorySingle IGBTs
Mfronsemi
Product StatusObsolete
IGBT TypeNPT
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector (Ic) (Max)6 A
Current - Collector Pulsed (Icm)9 A
Vce(on) (Max) @ Vge, Ic2.52V @ 15V, 3A
Power - Max60 W
Switching Energy52µJ (on), 30µJ (off)
Input TypeStandard
Gate Charge1.6 nC
Td (on/off) @ 25°C5.5ns/22ns
Test Condition400V, 3A, 10Ohm, 15V
Reverse Recovery Time (trr)21 ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageTO-252AA
Base Product NumberFGD3N60

Additional Resources

ATTRIBUTEDESCRIPTION
Other NamesFGD3N60UNDFCT
FGD3N60UNDFTR
FGD3N60UNDFDKR
Standard Package2500

Data Picture:https://www.onsemi.com/pdf/datasheet/fgd3n60undf-d.pdf

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