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100% Avalanche Testing Super Junction MOSFET For Telecom Server Power Supplies Product Description: One of the standout features of the Lingxun Super Junction MOSFET is its proprietary new super-junction technology. This technology allows for superior performance in high voltage applications, making it an ideal choice for use in mode power supplies. By utilizing this technology, Lingxun has been able to create a MOSFET...
100% Avalanche Testing Super Junction MOSFET For Telecom Server Power Supplies Product Description: One of the standout features of the Lingxun Super Junction MOSFET is its proprietary new super-junction technology. This technology allows for superior performance in high voltage applications, making it an ideal choice for use in mode power supplies. By utilizing this technology, Lingxun has been able to create a MOSFET... more
Brand Name:Lingxun
Place of Origin:China
Certification:IATF16949,ISO9001,ISO14001,ROHS,REACH
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...-height: 1.5; -webkit-font-smoothing: antialiased; } img, picture, video, canvas, svg {display: block; max-width: 100%; } input, button, textarea, select {font: inherit; } p, h1, h2, h3, h4, h5, h6 {overflow-wrap: break-... more
Brand Name:REASUNOS
Place of Origin:Guangdong, CN
Price:Confirm price based on product
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...Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free Description Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to
...Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free Description Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to more
Brand Name:Infineon
Model Number:IRF1404PBF
Place of Origin:China
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... also reducing internal capacitance and gate charge for faster and more efficient switching. Features : 100% avalanche tested Ultra low on-resistance Distinctive Characteristics : Part No: STP15810 Description: N Channel Power MOSFET Rad Hardened: No
... also reducing internal capacitance and gate charge for faster and more efficient switching. Features : 100% avalanche tested Ultra low on-resistance Distinctive Characteristics : Part No: STP15810 Description: N Channel Power MOSFET Rad Hardened: No more
Brand Name:STMicroelectronics
Model Number:STP15810
Place of Origin:Shenzhen, China
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FQT5P10TF MOSFET Power Electronics PackageTO-261-4 energy strength 1.05 Ω Avalanche Tested ET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100 V Current - Continuous Drain (Id) @ 25°C 1A (Tc) Drive Voltage (Max Rds On, Min ...
FQT5P10TF MOSFET Power Electronics PackageTO-261-4 energy strength 1.05 Ω Avalanche Tested ET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100 V Current - Continuous Drain (Id) @ 25°C 1A (Tc) Drive Voltage (Max Rds On, Min ... more
Brand Name:onsemi
Model Number:FQT5P10TF
Place of Origin:original
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... DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less
... DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less more
Brand Name:STMICROELECTRONICS
Model Number:STN3NF06L
Place of Origin:Original
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...STripFET⑩ II POWER MOSFET TYPE VDSS RDS(on) ID STN3NF06 60 V < 0.1 Ω 4 A ■ TYPICAL RDS(on) = 0.07 Ω ■ EXCEPTIONAL dv/dt CAPABILITY ■ 100% AVALANCHE TESTED ■ AVALANCHE RUGGED TECHNOLOGY DESCRIPTION This Power MOSFET is the latest development...
...STripFET⑩ II POWER MOSFET TYPE VDSS RDS(on) ID STN3NF06 60 V < 0.1 Ω 4 A ■ TYPICAL RDS(on) = 0.07 Ω ■ EXCEPTIONAL dv/dt CAPABILITY ■ 100% AVALANCHE TESTED ■ AVALANCHE RUGGED TECHNOLOGY DESCRIPTION This Power MOSFET is the latest development... more
Brand Name:Anterwell
Model Number:STN3NF06
Place of Origin:original factory
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...Mosfet Driver Circuit Using Transistor Npn Power Transistor Applications DC to DC converters Low voltage motor controllers These are widely used in the low voltage switches which are less than the 200V Npn Power Transistor Description -30V/-50A R DS(ON) = 10.4mΩ(typ.) @V GS = -10V R DS(ON) = 14.2mΩ(typ.) @V GS = -4.5V 100% Avalanche Tested...
...Mosfet Driver Circuit Using Transistor Npn Power Transistor Applications DC to DC converters Low voltage motor controllers These are widely used in the low voltage switches which are less than the 200V Npn Power Transistor Description -30V/-50A R DS(ON) = 10.4mΩ(typ.) @V GS = -10V R DS(ON) = 14.2mΩ(typ.) @V GS = -4.5V 100% Avalanche Tested... more
Brand Name:Hua Xuan Yang
Model Number:12P03C2
Place of Origin:ShenZhen China
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... MOSFET is produced using Maple semi‘s Advanced Super-Junction technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and ...
... MOSFET is produced using Maple semi‘s Advanced Super-Junction technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and ... more
Brand Name:Maplesemi
Model Number:SLH60R080SS
Place of Origin:Original
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...MOSFET Product Description: Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. Application: • Faster Switching • 100% Avalanche Tested...
...MOSFET Product Description: Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. Application: • Faster Switching • 100% Avalanche Tested... more
Brand Name:Microchip
Model Number:APT30M85BVRG
Place of Origin:USA
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...MOSFET BSZ100N03MS GSP000311510 MSP430F5514IRGCT LPC812M101JD20 Discrete Semiconductors MOSFET OptiMOS TM3 M-Series Power-MOSFET, 30 V Features ●Optimized for 5V driver aplication (Notebook, VGA, POL) ●Low FOMQsw for high frequency SMPS 100% avalanche tested...
...MOSFET BSZ100N03MS GSP000311510 MSP430F5514IRGCT LPC812M101JD20 Discrete Semiconductors MOSFET OptiMOS TM3 M-Series Power-MOSFET, 30 V Features ●Optimized for 5V driver aplication (Notebook, VGA, POL) ●Low FOMQsw for high frequency SMPS 100% avalanche tested... more
Brand Name:Original
Model Number:BSZ100N03MSGATMA1
Place of Origin:Original
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STP12NM50 ST MOSFET N-Ch 500 Volt 12 Amp Switching applications 1.Features 100% avalanche tested Low input capacitance and gate charge Low gate input resistance 2.Description These N-channel Power MOSFETs are developed using STMicroelectronics'...
STP12NM50 ST MOSFET N-Ch 500 Volt 12 Amp Switching applications 1.Features 100% avalanche tested Low input capacitance and gate charge Low gate input resistance 2.Description These N-channel Power MOSFETs are developed using STMicroelectronics'... more
Brand Name:ST
Model Number:STP12NM50
Place of Origin:Morocco
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NPN PNP POWER MOSFET STD12NE06 TO-252 ST New and Original in stock TYPICAL RDS(on) = 0.08 W EXCEPTIONAL dv/dt CAPABILITY AVALANCHERUGGED TECHNOLOGY 100% AVALANCHE TESTED APPLICATIONORIENTED CHARACTERIZATION ADD SUFFIX ”T4” FORORDERING IN TAPE & REEL ...
NPN PNP POWER MOSFET STD12NE06 TO-252 ST New and Original in stock TYPICAL RDS(on) = 0.08 W EXCEPTIONAL dv/dt CAPABILITY AVALANCHERUGGED TECHNOLOGY 100% AVALANCHE TESTED APPLICATIONORIENTED CHARACTERIZATION ADD SUFFIX ”T4” FORORDERING IN TAPE & REEL ... more
Brand Name:ST
Model Number:STD12NE06
Place of Origin:/
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N Channel Mos Field Effect Transistor ,High Power Transistor -30V/-80A N Channel Mos Field Effect Transistor Description -30V/-80A R DS(ON) = 3.8 mΩ (typ.) @V GS = -10V R DS(ON) = 6.2 mΩ (typ.) @V GS = -4.5V 100% Avalanche Tested Reliable and Rugged ...
N Channel Mos Field Effect Transistor ,High Power Transistor -30V/-80A N Channel Mos Field Effect Transistor Description -30V/-80A R DS(ON) = 3.8 mΩ (typ.) @V GS = -10V R DS(ON) = 6.2 mΩ (typ.) @V GS = -4.5V 100% Avalanche Tested Reliable and Rugged ... more
Brand Name:Hua Xuan Yang
Model Number:G045P03LQ1C2
Place of Origin:ShenZhen China
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... Low Crss ( Typ. 10pF) • Fast Switching • 100% Avalanche Tested • Improved dv/dt Capability • ESD Improved Capability • RoHS compliant Description These N-Channel enhancement mode power field ...
... Low Crss ( Typ. 10pF) • Fast Switching • 100% Avalanche Tested • Improved dv/dt Capability • ESD Improved Capability • RoHS compliant Description These N-Channel enhancement mode power field ... more
Brand Name:FSC
Model Number:FDPF10N60NZ
Place of Origin:CHINA
