| Categories | Electronic Integrated Circuits |
|---|---|
| Brand Name: | ST |
| Model Number: | STP12NM50 |
| Certification: | ROHS |
| Place of Origin: | Morocco |
| MOQ: | 10PCS |
| Price: | NEGOTIABLE |
| Payment Terms: | T/T, Western Union |
| Supply Ability: | 3000PCS/WEEK |
| Delivery Time: | 2-3DAYS |
| Packaging Details: | 1000PCS/TUBE |
| Technology: | Si |
| Mounting Style: | Through Hole |
| Transistor Polarity: | N-Channel |
| Number of Channels: | 1 Channel |
| Vds - Drain-Source Breakdown Voltage: | 500 V |
| Id - Continuous Drain Current: | 12 A |
| Rds On - Drain-Source Resistance: | 350 mOhms |
| Vgs - Gate-Source Voltage: | - 30 V, + 30 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Qg - Gate Charge: | 39 nC |
| Minimum Operating Temperature: | - 65 C |
| Maximum Operating Temperature: | + 150 C |
| Pd - Power Dissipation: | 160 W |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Forward Transconductance - Min: | 5.5 S |
| Height: | 9.15 mm |
| Length: | 10.4 mm |
| Width: | 4.6 mm |
| Rise Time: | 10 ns |
| Typical Turn-On Delay Time: | 20 ns |
| Factory packing quantity: | 1000 |
1.Features
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
2.Description
These N-channel Power MOSFETs are developed using
STMicroelectronics'revolutionary MDmesh technology, which
associates the multiple drain process withthe company's PowerMESH
horizontal layout. These devices offer extremely low on-resistance,
high dv/dt and excellent avalanche characteristics. Utilizing
ST'sproprietary strip technique, these Power MOSFETs boast an
overall dynamicperformance which is superior to similar products on
the market
3.Applications
Switching applications
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