-
...Carbide substrates for semiconductor, Silicon Carbide substrates for semconductor ,sic single crystal wafers ,sic ingots for gem Application areas 1 high frequency and high power electronic devices Schottky diodes, JFET, BJT, PiN, diodes, IGBT, MOSFET 2
...Carbide substrates for semiconductor, Silicon Carbide substrates for semconductor ,sic single crystal wafers ,sic ingots for gem Application areas 1 high frequency and high power electronic devices Schottky diodes, JFET, BJT, PiN, diodes, IGBT, MOSFET 2 more
Brand Name:ZMSH
Model Number:4H
Place of Origin:China
-
... of advanced electronic devices, particularly for applications requiring high power, high frequency, and high temperature performance. This study investigates the structural and electrical properties of P-type SiC substrates, emphasizing their role in
-
...industry. SiC wafer is a next generation semiconductor materialwith unique electrical properties and excellent thermal properties for high temperature and high power device application. SiC wafer can be supplied in diameter 2~6 inch, both 4H and 6H SiC , N
...industry. SiC wafer is a next generation semiconductor materialwith unique electrical properties and excellent thermal properties for high temperature and high power device application. SiC wafer can be supplied in diameter 2~6 inch, both 4H and 6H SiC , N more
Brand Name:PAM-XIAMEN
Place of Origin:China
Minimum Order Quantity:1-10,000pcs
4H Semi-Insulating SiC Substrate With Si Face Cmp Polished, Research Grade,4”Size
-
SiC Ingots Supplier offer 6 inch SiC Substrate Homray Material Technology offersthe best price on the market for high quality SiC Ingots, SiC wafers. The major products are 4 inch 6 inch SiC Ingots andsubstrate, widely used in electronic devices with high power and high frequency, light emitting diode (LED) and other. light-emitting diode (LED) is the use of semiconductor electrons and holes in a combination of electronic...
SiC Ingots Supplier offer 6 inch SiC Substrate Homray Material Technology offersthe best price on the market for high quality SiC Ingots, SiC wafers. The major products are 4 inch 6 inch SiC Ingots andsubstrate, widely used in electronic devices with high power and high frequency, light emitting diode (LED) and other. light-emitting diode (LED) is the use of semiconductor electrons and holes in a combination of electronic... more
Brand Name:HMT
Place of Origin:CHINA
SiC Ingots Supplier offer 6 inch SiC Substrate
-
... and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the important LED components, it is a popular substrate for growing GaN devices, and it
... and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the important LED components, it is a popular substrate for growing GaN devices, and it more
Brand Name:ANG
Model Number:SIC-W05
Place of Origin:Guangdong, China
4h-N Semi Silicon Carbide Wafer Sic Substrate Wafer for MOS Device
-
Thin Film Si3n4 Silicon Nitride Substrates Wafer Sheet For Power Electronics Ceramic Plates:Ceramic plates are extremely weather resistant, and they have no effect on the surface and substrate, whether it is sunlight, rain (even acid rain) or moisture. UV ...
Thin Film Si3n4 Silicon Nitride Substrates Wafer Sheet For Power Electronics Ceramic Plates:Ceramic plates are extremely weather resistant, and they have no effect on the surface and substrate, whether it is sunlight, rain (even acid rain) or moisture. UV ... more
Brand Name:wuxi special ceramic
Place of Origin:Made in China
Minimum Order Quantity:10p
Thin Film Si3n4 Silicon Nitride Substrates Wafer Sheet For Power Electronics
-
... + 100% Low Price Guaranteed + Export to 108 countries, customer satisfaction rate: 99.9% !! [Company profile] Shenzhen Mingjiada Electronics Co., Ltd. is an authorized independent distributor of electronic components of world-renowned brands.
-
...substrate,Semi Package,Semiconductors ,Semiconductor,IC package,IC substrate,uMCP,MCP,UFS,CMOS,MEMS,IC assembly,Storage IC substrage;Smart phone -.Lap top (Ultra thin notebook / Tablet PC) -.Portable game device-.Power/Analog IC drive-Control drive IC for portable electronic...
...substrate,Semi Package,Semiconductors ,Semiconductor,IC package,IC substrate,uMCP,MCP,UFS,CMOS,MEMS,IC assembly,Storage IC substrage;Smart phone -.Lap top (Ultra thin notebook / Tablet PC) -.Portable game device-.Power/Analog IC drive-Control drive IC for portable electronic... more
Brand Name:Horexs
Model Number:HRX
Place of Origin:CHINA
High-Performance SiP Package Substrate for IoT Electronics
-
Silicon Carbide SBD/Sic SBD High-Performance Material for Power Electronics *, *::before, *::after {box-sizing: border-box; } * {margin: 0; } html, body {height: 100%; } body {line-height: 1.5; -webkit-font-smoothing: ...
Silicon Carbide SBD/Sic SBD High-Performance Material for Power Electronics *, *::before, *::after {box-sizing: border-box; } * {margin: 0; } html, body {height: 100%; } body {line-height: 1.5; -webkit-font-smoothing: ... more
Brand Name:REASUNOS
Place of Origin:Guangdong, CN
Price:Confirm price based on product
Automotive Silicon Carbide SBD Practical For Power Electronics
-
Customized Copper Core Metal Core PCB for High-Power Electronics PCB parameter: Brand:Oneseine Application: Full range of fluorescent lamps Maximum size: 1500mm Substrate material: Aluminum Thickness: 0.6-2.0mm Copper foil thickness: 18-70um Surface ...
Customized Copper Core Metal Core PCB for High-Power Electronics PCB parameter: Brand:Oneseine Application: Full range of fluorescent lamps Maximum size: 1500mm Substrate material: Aluminum Thickness: 0.6-2.0mm Copper foil thickness: 18-70um Surface ... more
Brand Name:ONESEINE
Model Number:ONE-102
Place of Origin:Shenzhen,China
Customized Copper Core Metal Core PCB For High-Power Electronics
-
Third Generation Semiconductor Silicon Carbide MOSFET For Consumer Electronics *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: 100%;}body {line-height: 1.5;-webkit-font-smoothing: antialiased;}img, picture, video, canvas, ...
Third Generation Semiconductor Silicon Carbide MOSFET For Consumer Electronics *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: 100%;}body {line-height: 1.5;-webkit-font-smoothing: antialiased;}img, picture, video, canvas, ... more
Brand Name:Lingxun
Place of Origin:China
Certification:ISO9001,ISO14001,ROHS,REACH
Third Generation Semiconductor Sic MOS For Power Inverters
-
High power LED grow light lamp beads chip 440-450nm 1W LED SMD models LN-SMD3030RB-P1-E35 Electronic power 1W Color temperature 440-450nm VF 3.0-3.4V IF 300mA Circuit 1PCS in series 1PCS in parallel LUMINUOUS EFF 10-15lm WHOLE SIZE 3.0*3.0mm LENS Silica ...
High power LED grow light lamp beads chip 440-450nm 1W LED SMD models LN-SMD3030RB-P1-E35 Electronic power 1W Color temperature 440-450nm VF 3.0-3.4V IF 300mA Circuit 1PCS in series 1PCS in parallel LUMINUOUS EFF 10-15lm WHOLE SIZE 3.0*3.0mm LENS Silica ... more
Brand Name:LERANEW
Model Number:LN-SMD3030RB-P1-E35
Place of Origin:CHINA
PCT Substrate High Power SMD LED 440-450nm 3V 1W SMD LED
-
Direct Bond Copper Alumina Metallized Ceramic DBC Substrate For Power Electronics Why choose us? 1. Support custom made metalized ceramic substrates, whatever, it's prototyping project, or cost down. 2. With over 15 years of OEM, ODM manufacturing ...
Direct Bond Copper Alumina Metallized Ceramic DBC Substrate For Power Electronics Why choose us? 1. Support custom made metalized ceramic substrates, whatever, it's prototyping project, or cost down. 2. With over 15 years of OEM, ODM manufacturing ... more
Brand Name:OEM
Model Number:Customized
Place of Origin:Hunan, China
Direct Bond Copper DBC Ceramic Substrate , Aluminum Nitride Substrate
-
...Power MOSFET NVH4L022N120M3S SiC MOSFET 1200 V 22 mohm M3S Series in TO247-4LD package [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 years, specialize in selling the new and unused, original factory sealed packing electronic...
...Power MOSFET NVH4L022N120M3S SiC MOSFET 1200 V 22 mohm M3S Series in TO247-4LD package [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 years, specialize in selling the new and unused, original factory sealed packing electronic... more
Brand Name:ONSEMI
Model Number:NVH4L022N120M3S
Place of Origin:China
High Power MOSFET NVH4L022N120M3S SiC MOSFET 1200 V 22 mohm M3S Series in TO247-4LD package
-
Introducing the MSP10065V1 10A 650V 1.5V SiC Diode Advanced Technology for a More Efficient and Reliable Performance The MSP10065V1 10A 650V 1.5V SiC diode, using TO-220 package technology, is the perfect solution for those who want an efficient and sturdy...
Introducing the MSP10065V1 10A 650V 1.5V SiC Diode Advanced Technology for a More Efficient and Reliable Performance The MSP10065V1 10A 650V 1.5V SiC diode, using TO-220 package technology, is the perfect solution for those who want an efficient and sturdy... more
Brand Name:Original
Place of Origin:Guangdong, China
Packaging Details:Standard carton
MSP10065V1 Silicon Carbide Diode replacement for Power Supply Unit PSU
-
... in electronics, silicon is beginning to show some limitations, especially in high-power applications. A relevant factor in these applications is the bandgap, or energy gap, that a semiconductor offers. When the bandgap is high, the electronic devices it
-
... material , with unique electrical properties and excellent thermal properties , compared to silicon wafer and GaAs wafer , SiC wafer is more suitable for high temperature and high power device application . SiC wafer can be supplied in diameter 2
... material , with unique electrical properties and excellent thermal properties , compared to silicon wafer and GaAs wafer , SiC wafer is more suitable for high temperature and high power device application . SiC wafer can be supplied in diameter 2 more
Brand Name:ZG
Model Number:MS
Place of Origin:CHINA
Optoelectronic Device SiC Wafer for Light Emitting Diodes
-
...Power Bank And Consumer Electronics 1. FR4 TG150 substrate. 2. Power bank and consumer electronics. 3. HASL leadfree approved by RoHS. 4. 70um copper weight. 5. All PCB assembly have to test ok before ship it. 1 Layer 2L 2 Board Substrate FR4 TG150 3 PCB thick 1.56mm 4 Use Power bank and consumer electronics...
...Power Bank And Consumer Electronics 1. FR4 TG150 substrate. 2. Power bank and consumer electronics. 3. HASL leadfree approved by RoHS. 4. 70um copper weight. 5. All PCB assembly have to test ok before ship it. 1 Layer 2L 2 Board Substrate FR4 TG150 3 PCB thick 1.56mm 4 Use Power bank and consumer electronics... more
Brand Name:ABIS
Model Number:PP-2
Place of Origin:China
Power Bank Electronics SMT Prototype PCB Assembly
-
Keysight (Agilent) B1505A Power Device Analyzer / Curve Tracer Description of Keysight (Agilent) B1505A The Agilent B1505A Power Device Analyzer / Curve Tracer is the only single box solution available today with the capability to characterize high power ...