-
Product Description: Our Silicon Carbide Ceramics product is made from a high-density material with a hardness of 2800, ensuring that it can withstand even the most challenging conditions. The material's thermal expansion coefficient is 4.3 X 10-6/K, ...
Product Description: Our Silicon Carbide Ceramics product is made from a high-density material with a hardness of 2800, ensuring that it can withstand even the most challenging conditions. The material's thermal expansion coefficient is 4.3 X 10-6/K, ... more
Place of Origin:China
Minimum Order Quantity:10p
Price:1usd
-
...sic substrates, 4h-n,4H-SEMI,sic ingot sic crystal ingots sic crystal block sic semiconductor substrates,High purity silicon carbide SiC Wafer SiC crystal are cutted into slices, and polishing, the SiC wafer comes. For specification and details, please visit below page. SiC crystal growth Bulk crystal growth is the technique for fabrication of single crystalline substrates , making the base for further device processing...
...sic substrates, 4h-n,4H-SEMI,sic ingot sic crystal ingots sic crystal block sic semiconductor substrates,High purity silicon carbide SiC Wafer SiC crystal are cutted into slices, and polishing, the SiC wafer comes. For specification and details, please visit below page. SiC crystal growth Bulk crystal growth is the technique for fabrication of single crystalline substrates , making the base for further device processing... more
Brand Name:zmsh
Model Number:sic- 6inch
Place of Origin:china
High Purity un-doped Silicon Carbide sic Wafer , 6Inch 4H-Semi Sic Silicon Carbide Substrate
-
SiC Ceramic Tray/Plate/Wafer Holder for ICP Etching Process Used in Epitaxial Growth Processing Abstract of SiC (Silicon Carbide) Ceramic Trays Silicon carbide (SiC) ceramic trays are high-performance materials widely used in industries that require durability, high-temperature stability, and excellent thermal conductivity. SiC...
SiC Ceramic Tray/Plate/Wafer Holder for ICP Etching Process Used in Epitaxial Growth Processing Abstract of SiC (Silicon Carbide) Ceramic Trays Silicon carbide (SiC) ceramic trays are high-performance materials widely used in industries that require durability, high-temperature stability, and excellent thermal conductivity. SiC... more
Brand Name:ZMSH
Model Number:SiC Ceramic Tray/Plate/Wafer
Place of Origin:China
SiC Ceramic Tray Plate Wafer Holder For ICP Etching Process In Epitaxial Growth Processing
-
...SiC Wafer, Dummy Grade,2”Size -SiC Wafer Supplier PAM-XIAMEN offers semiconductor silicon carbide wafers,6H SiC and 4H SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC crystal wafer processing...
...SiC Wafer, Dummy Grade,2”Size -SiC Wafer Supplier PAM-XIAMEN offers semiconductor silicon carbide wafers,6H SiC and 4H SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC crystal wafer processing... more
Brand Name:PAM-XIAMEN
Place of Origin:China
Minimum Order Quantity:1-10,000pcs
6H N Type SiC Wafer, Dummy Grade,2”Size -SiC Wafer Supplier
-
... belong to α-SiC. 1. Black silicon carbide contains about 95% SiC, and its toughness is higher than that of green silicon carbide. It is mostly used for processing materials with low tensile strength, such as glass, ceramics, stone, refractory materials,
... belong to α-SiC. 1. Black silicon carbide contains about 95% SiC, and its toughness is higher than that of green silicon carbide. It is mostly used for processing materials with low tensile strength, such as glass, ceramics, stone, refractory materials, more
Brand Name:YUBEI
Place of Origin:China
Certification:ISO9001
High Hardness Sic Ceramics Disc 400GPa Silicon Carbide Plate
-
...poeders. 2) Product: A kind of non-metal high temperature electric heating element. 3) Production Process: Made into blank, silicided under high temperature and re-crystallized. 4) Usage: It is widely used in various high temperature laboratory furnace and
-
SG Type SiC Heating element, A single threaded rod is an electronic component made by precision calculation and special processing on the basis of equal diameter silicon carbon rods, with a temperature of up to 1500. Mainly used for heating kilns with ...
SG Type SiC Heating element, A single threaded rod is an electronic component made by precision calculation and special processing on the basis of equal diameter silicon carbon rods, with a temperature of up to 1500. Mainly used for heating kilns with ... more
Brand Name:SONGYU
Place of Origin:China
Minimum Order Quantity:10pcs
SG Type SiC Heating element
-
Mechanical Seal TB1, TB1F & TB2 for Sulzer Process Pumps for Mixer SIC/SIC/PTFE/304 Operational Conditions: 30mm, 40mm, 50mm, 60mm, 80mm, 85mm (special size), and 90mm Temperature: -20ºC to +180ºC Pressure: ≤2.5MPa Speed: ≤15m/s Materials: Stationary Ring...
-
...SiC wafer manufacturer SiC substrate supplier Homray Material Technology offers semiconductor silicon carbide wafers,4H-SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC crystal wafer processing technology,established a production line to manufacturer SiC...
...SiC wafer manufacturer SiC substrate supplier Homray Material Technology offers semiconductor silicon carbide wafers,4H-SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC crystal wafer processing technology,established a production line to manufacturer SiC... more
Brand Name:HMT
Place of Origin:CHINA
4 inch 4H-SI SiC wafer manufacturer SiC substrate supplier
-
Bold Shaft And High Stiffness Chemical Process Pump With Reliable Load Bearing Description: The pump is a single screw-type transport pumps, because of its excellent performance in recent years in the domestic application of rapid expansion. Its most ...
-
... Carbide(SiC) has high hardness, light weight. It's ideal in compromising weight and cost. 3. It is manufactured by hot-press sintering, presureless sintering and reaction bonding processes 4. Shapes can be square, hexagonal, cylindrical,or disc-like etc.
-
...SiC Trench MOSFET TO247 package Description The CoolSiC™ 1200 V, 14 mΩ SiC MOSFET in TO247-4 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. In comparison to traditional silicon (Si) based switches like IGBTs and MOSFETs, the SiC...
...SiC Trench MOSFET TO247 package Description The CoolSiC™ 1200 V, 14 mΩ SiC MOSFET in TO247-4 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. In comparison to traditional silicon (Si) based switches like IGBTs and MOSFETs, the SiC... more
Brand Name:Original Factory
Model Number:IMZA120R014M1HXKSA1
Place of Origin:CN
IMZA120R014M1HXKSA1 GaN IC 1200V Gan Fet Transistor 14mohm SiC Trench MOSFET TO247
-
...SiC) trays and plates are precision-engineered wafer carriers designed specifically for Inductively Coupled Plasma (ICP) etching processes within the LED industry. SiC stands out as a superior material due to its exceptional thermal management, outstanding corrosion resistance, and remarkable mechanical stability at extreme temperatures. These properties make our SiC...
-
..., with typical purity levels of 90%, 88%, and 80%. As a deoxidizing agent, SiC plays a crucial role in removing oxygen from molten metal, thereby preventing oxidation and improving the overall quality of the final metal product. By ...
..., with typical purity levels of 90%, 88%, and 80%. As a deoxidizing agent, SiC plays a crucial role in removing oxygen from molten metal, thereby preventing oxidation and improving the overall quality of the final metal product. By ... more
Brand Name:ZHENAN
Model Number:Silicon Carbide
Place of Origin:China
Metallurgical Garde Black Silicon Carbide Deoxidizer Sic 90% 88% 80%
-
... Elliptical SiC-Graphite Crucible: Optimized for Smelting & Recycling Integrating the synergistic properties of silicon carbide (SiC) and graphite, these advanced crucibles are purpose-built to optimize high-temperature metal processing in smelting, ...
-
... structural unit of silicon carbide crystal is SiC and CSi tetrahedrons interspersed with each other. The tetrahedrons share the same edges to form a plane layer, and are connected with the next stacked tetrahedrons to form a three-dimensional structure.
... structural unit of silicon carbide crystal is SiC and CSi tetrahedrons interspersed with each other. The tetrahedrons share the same edges to form a plane layer, and are connected with the next stacked tetrahedrons to form a three-dimensional structure. more
Brand Name:Weite ceramics
Model Number:wtdhgtc
Place of Origin:Jiangsu, China
Processing and customization of silicon nitride ceramic parts
-
... Car / SIC/TC/Cer O-Ring , EPDM, NBR, AFLAS, Kalrez Spring and Metal Parts SUS304, SUS316, Titan, 904L Stationary Ring Car / SIC /TC/Cer Features: Standard Balanced Single Mechanical Seal119B For Chemical Process Pump. Type 119B mechanical seal is a
... Car / SIC/TC/Cer O-Ring , EPDM, NBR, AFLAS, Kalrez Spring and Metal Parts SUS304, SUS316, Titan, 904L Stationary Ring Car / SIC /TC/Cer Features: Standard Balanced Single Mechanical Seal119B For Chemical Process Pump. Type 119B mechanical seal is a more
Brand Name:JG
Model Number:119B
Place of Origin:Zhejiang, China
Standard Balanced Single Mechanical Seal 119B For Chemical Process Pump
-
... and Router Unit 100E, 4 SIC, 2 WSIC, 4 XSIC, and 350W AC Power. Huawei AR3260 router using embedded hardware encryption, support for voice digital signal processor (DSP) slot and Firewall support, call processing, voice mail and application services, the
-
SIC-W Series Small Vertical Injection Molding Machine The SIC-W Series High Speed Injection Molding Machine represents a cutting-edge solution in plastic manufacturing, engineered to meet modern production demands with exceptional efficiency and precision...