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...Enhancement Mode Power surface mount MOSFET for BLDC motor driver GENERAL DESCRIPTION: The JY4N8M utilizes the latest trench processing techniques to achieve the high cell density and reduces the on‐resistance with low gate charge. These features combine to make this design an extremely efficient and reliable device for use in power switching...
...Enhancement Mode Power surface mount MOSFET for BLDC motor driver GENERAL DESCRIPTION: The JY4N8M utilizes the latest trench processing techniques to achieve the high cell density and reduces the on‐resistance with low gate charge. These features combine to make this design an extremely efficient and reliable device for use in power switching... more
Brand Name:JUYI
Model Number:JY4N8M
Place of Origin:China
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DMN26D0UFB4-7 Diodes MOSFET ENHANCE MODE MOSFET 20V N-Chan X2-DFN1006 DMN26D0UFB4-7B Manufacturer: Diodes Incorporated Product Category: MOSFET Technology: Si Installation style: SMD/SMT Package/Box: X2-DFN1006-3 Transistor polarity: N-Channel Number of ...
DMN26D0UFB4-7 Diodes MOSFET ENHANCE MODE MOSFET 20V N-Chan X2-DFN1006 DMN26D0UFB4-7B Manufacturer: Diodes Incorporated Product Category: MOSFET Technology: Si Installation style: SMD/SMT Package/Box: X2-DFN1006-3 Transistor polarity: N-Channel Number of ... more
Brand Name:Diodes
Model Number:DMN26D0UFB4-7
Place of Origin:UAS
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...Mosfet Transistor , Small Mosfet Power Switch Enhancement Mode N Channel Mosfet Transistor DESCRIPTION The UTC 12N60-C is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors. N Channel Mosfet
...Mosfet Transistor , Small Mosfet Power Switch Enhancement Mode N Channel Mosfet Transistor DESCRIPTION The UTC 12N60-C is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors. N Channel Mosfet more
Brand Name:Hua Xuan Yang
Model Number:12N60
Place of Origin:ShenZhen China
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FDMS86105 MOSFET Power Electronics N-Channel Enhancement Mode Device High Performance Reliable Power Switching Solution FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100 V Current - Continuous Drain (Id) @ 25°C 6A (Ta...
FDMS86105 MOSFET Power Electronics N-Channel Enhancement Mode Device High Performance Reliable Power Switching Solution FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100 V Current - Continuous Drain (Id) @ 25°C 6A (Ta... more
Brand Name:onsemi
Model Number:FDMS86105
Place of Origin:original
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#detail_decorate_root .magic-0{border-bottom-style:none;border-bottom-color:113c6f;font-family:Verdana;font-size:24px;color:#fff;background-color:#113c6f;text-align:center;text-decoration:underline;font-style:normal;font-weight:bold;border-bottom-width:2px... more
Brand Name:Original
Model Number:FTR
Place of Origin:Guangdong, China
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... trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4449 is Pb-free (meets ROHS & Sony 259 specifications). TYPICAL ELECTRICAL AND
... trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4449 is Pb-free (meets ROHS & Sony 259 specifications). TYPICAL ELECTRICAL AND more
Brand Name:AOSMD
Model Number:AO4449
Place of Origin:brand new
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...ENHANCEMENT MODE MOSFET linear power mosfet trench power mosfet FEATURES • Low on-resistance • Fast switching speed • Low threshold • Low gate drive • SOT23-6 package APPLICATIONS • DC–DC Converters • Power Management functions • Disconnect switches • Motor control DESCRIPTION This new generation of Trench MOSFETs...
...ENHANCEMENT MODE MOSFET linear power mosfet trench power mosfet FEATURES • Low on-resistance • Fast switching speed • Low threshold • Low gate drive • SOT23-6 package APPLICATIONS • DC–DC Converters • Power Management functions • Disconnect switches • Motor control DESCRIPTION This new generation of Trench MOSFETs... more
Brand Name:DIODES
Model Number:ZXMP10A17E6TA
Place of Origin:Original
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... and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Get more details
... and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Get more details more
Brand Name:JUYI
Model Number:JY8N5M
Place of Origin:China
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... QG × RDS(ON) product (FOM) and low RDS(ON). The low RDS(ON) ensures that the on-state losses are minimal. This MOSFET assures reliable and robust end application due to 100% unclamped inductive switching and test in production. DMT47M2SFVWQ MOSFET is
... QG × RDS(ON) product (FOM) and low RDS(ON). The low RDS(ON) ensures that the on-state losses are minimal. This MOSFET assures reliable and robust end application due to 100% unclamped inductive switching and test in production. DMT47M2SFVWQ MOSFET is more
Brand Name:Original Factory
Model Number:DMT47M2SFVWQ
Place of Origin:CN
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High Power MOSFET NVMS5P02 Single P-Channel Enhancement−Mode Power MOSFET -20V, -5.4A, 33mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for ...
High Power MOSFET NVMS5P02 Single P-Channel Enhancement−Mode Power MOSFET -20V, -5.4A, 33mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for ... more
Brand Name:ONSEMI
Model Number:NVMS5P02
Place of Origin:China
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MRF6V2150NBR1 RF Power Transistors N-Channel Enhancement-Mode Lateral MOSFETs Features • Characterized with Series Equivalent Large--Signal Impedance Parameters • Qualified Up to a Maximum of 50 VDD Operation • Integrated ESD ...
MRF6V2150NBR1 RF Power Transistors N-Channel Enhancement-Mode Lateral MOSFETs Features • Characterized with Series Equivalent Large--Signal Impedance Parameters • Qualified Up to a Maximum of 50 VDD Operation • Integrated ESD ... more
Brand Name:Freescale
Model Number:MRF6V2150NBR1
Place of Origin:USA
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INTEGRATED CIRCUIT CHIP AP4953GM --P-CHANNEL ENHANCEMENT MODE POWER MOSFET Quick Detail: P-CHANNEL ENHANCEMENT MODE POWER MOSFET Specifications: part no. AP4953GM Manufacturer APEC supply ability 3000 datecode 2007+ package SOP remark new...
INTEGRATED CIRCUIT CHIP AP4953GM --P-CHANNEL ENHANCEMENT MODE POWER MOSFET Quick Detail: P-CHANNEL ENHANCEMENT MODE POWER MOSFET Specifications: part no. AP4953GM Manufacturer APEC supply ability 3000 datecode 2007+ package SOP remark new... more
Brand Name:APEC
Model Number:AP4953GM
Place of Origin:Original Factory
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SRF6S19140HS is a N-Ch Enhancement Mode Power MOSFET. Part NO: SRF6S19140HS Brand: MOTOROLA Date Code: 03+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source ...
SRF6S19140HS is a N-Ch Enhancement Mode Power MOSFET. Part NO: SRF6S19140HS Brand: MOTOROLA Date Code: 03+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source ... more
Brand Name:MOTOROLA
Model Number:SRF6S19140HS
Place of Origin:MALAYSIA
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...Enhancement-Mode MOSFET (20V, 6A) 1.Description This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V-10V) 2.Features RDS(on)=38mΩ@VGS=2.5V, ID=5.2A; RDS(on)=25mΩ@VGS=4.5V, ID=6A • High Density Cell Design for Ultra Low On-Resistance • High Power...
...Enhancement-Mode MOSFET (20V, 6A) 1.Description This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V-10V) 2.Features RDS(on)=38mΩ@VGS=2.5V, ID=5.2A; RDS(on)=25mΩ@VGS=4.5V, ID=6A • High Density Cell Design for Ultra Low On-Resistance • High Power... more
Brand Name:FORTUNE
Model Number:FS8205A
Place of Origin:TAIWAN
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General Description: The JY16M utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and ...
General Description: The JY16M utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and ... more
Brand Name:JUYI
Model Number:JY16M
Place of Origin:China
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SQ201 SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Manufacturer: POLYFET Product Category: MOSFETs RoHS: Details Technology:- Mounting Style: SMD/SMT Package / Case:- - Transistor Polarity:- - Number of Channels:- - Vds - Drain-Source ...
SQ201 SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Manufacturer: POLYFET Product Category: MOSFETs RoHS: Details Technology:- Mounting Style: SMD/SMT Package / Case:- - Transistor Polarity:- - Number of Channels:- - Vds - Drain-Source ... more
Description:SQ201 SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
Stock:200PCS
Minimum Order Quantity:1pcs
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... power transistor MOSFETS The PD85035-E is a common source N-channel,enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at ...
... power transistor MOSFETS The PD85035-E is a common source N-channel,enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at ... more
Brand Name:Texas Instruments
Model Number:PD85035S-E
Place of Origin:Malaysia
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TLE7239SL Power Switch ICs Power Distribution SPI Driver Enhanced Relay Control SPI Driver Enhanced Relay Control Features ● 8 bit SPI for diagnostics and control, providing daisy chain capability ● Very wide range for digital supply ...
TLE7239SL Power Switch ICs Power Distribution SPI Driver Enhanced Relay Control SPI Driver Enhanced Relay Control Features ● 8 bit SPI for diagnostics and control, providing daisy chain capability ● Very wide range for digital supply ... more
Brand Name:Original
Model Number:TLE7239SL
Place of Origin:Original
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..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V ...
..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V ... more
Brand Name:Hua Xuan Yang
Model Number:G170C03LR1S
Place of Origin:ShenZhen China
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... sound industry, more and more people are seeking for amplifiers with light weight, high power output, and high efficiency. Switch mode power amplifiers are a good solution. Our S-700,900,1200,1500 are one series Class TD switch mode power amplifier with
... sound industry, more and more people are seeking for amplifiers with light weight, high power output, and high efficiency. Switch mode power amplifiers are a good solution. Our S-700,900,1200,1500 are one series Class TD switch mode power amplifier with more
Brand Name:HOT DEVICES
Model Number:S-1500
Place of Origin:GuangZhou,China
