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...Power Mosfet Field Effect Transistor Chip Circuit Protection 75V 170A Description Power MOSFT 75V 170A 4.1mOhm Single N-Channel HEXFET Power MOSFET in a D2-Pak package Specifications Product Attribute Attribute Value Manufacturer: Infineon Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: TO-263-3 Transistor...
...Power Mosfet Field Effect Transistor Chip Circuit Protection 75V 170A Description Power MOSFT 75V 170A 4.1mOhm Single N-Channel HEXFET Power MOSFET in a D2-Pak package Specifications Product Attribute Attribute Value Manufacturer: Infineon Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: TO-263-3 Transistor... more
Brand Name:Infineon Technologies
Model Number:IRFS3207ZTRRPBF
Minimum Order Quantity:Negotiable
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MRF21090 is a RF Power Field Effect Transistor. Part NO: MRF21090 Brand: MOT Date Code: 05+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source ...
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The RF Sub–Micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N–Channel Enhancement–Mode Lateral MOSFETs 945 MHz, 30 W, 26 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETs Designed for broadband commercial and industrial applications with ...
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.... - RDS(on) = 15 mΩ MAX. (VGS = −10 V, ID = −10 A). 4.5 V Gate-drive available. Small and surface mount package (Power SOP8). Pb-free and Halogen free. Electrical Characteristics : Absolute Maximum Ratings : for product datasheet, CONTACT US directly.
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MRF175LU N/A Electronic Components IC MCU Microcontroller Integrated Circuits MRF175LU #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border-bottom-...
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Brand Name:Renesas
Place of Origin:Japan
Packaging Details:The goods will be packed in carton which wrapped all by adhesive tape. In order to lower the freight cost, the volumn of the carton will be compressed without hurting the goods.
HAT2093R-EL-E RENESAS IC SOP-8 Power Field-Effect Transistor
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..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature 30V/100A R DS(ON) = 2.4mΩ(typ.) @V GS = 10V R DS(ON) = 2.9mΩ(typ.) @V GS = 4.5V 100%
..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature 30V/100A R DS(ON) = 2.4mΩ(typ.) @V GS = 10V R DS(ON) = 2.9mΩ(typ.) @V GS = 4.5V 100% more
Brand Name:Hua Xuan Yang
Model Number:3403D-U-V
Place of Origin:ShenZhen China
Linear Power Mos Field Effect Transistor Vertical Structure 3403D-U-V
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..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V Vds = -30V 9.5 A (Vgs= 10V) - 8 A (Vgs= -10V) 12.9 mΩ
..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V Vds = -30V 9.5 A (Vgs= 10V) - 8 A (Vgs= -10V) 12.9 mΩ more
Brand Name:Hua Xuan Yang
Model Number:G170C03LR1S
Place of Origin:ShenZhen China
Fast Switching Time Mos Field Effect Transistor , Power Switch Transistor
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...Field Effect Transistor General Description SuperSOTTM-3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as notebook computer power
...Field Effect Transistor General Description SuperSOTTM-3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as notebook computer power more
Brand Name:FAIRCHILD
Model Number:NDS356AP
Place of Origin:Philippines
NDS356AP Power Transistor P-Channel Logic Level Enhancement Mode Field Effect Transistor
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This listing is for a SPD08P06PGBTMA1 MOSFET Power Electronics. This MOSFET is a logic level N-channel enhancement mode power field-effect transistor and has the following parameters: Type: MOSFET Power Electronics Part Number: SPD08P06PGBTMA1 Voltage: 8 V...
This listing is for a SPD08P06PGBTMA1 MOSFET Power Electronics. This MOSFET is a logic level N-channel enhancement mode power field-effect transistor and has the following parameters: Type: MOSFET Power Electronics Part Number: SPD08P06PGBTMA1 Voltage: 8 V... more
Brand Name:Infineon Technologies
Model Number:SPD08P06PGBTMA1
Place of Origin:Multi-origin
Common Power Mosfet SPD08P06PGBTMA1 8A 60V N Channel MOSFET field effect transistor
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...Power MOSFET 2N7002T N-Channel Enhancement Mode Field Effect Transistor 60V, 115mA, 2Ω [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 years, specialize in selling the new and unused, original factory sealed packing electronic components. specialize in IC,MCU,Memory,Module,diode,transistor...
...Power MOSFET 2N7002T N-Channel Enhancement Mode Field Effect Transistor 60V, 115mA, 2Ω [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 years, specialize in selling the new and unused, original factory sealed packing electronic components. specialize in IC,MCU,Memory,Module,diode,transistor... more
Brand Name:ONSEMI
Model Number:2N7002T
Place of Origin:China
High Power MOSFET 2N7002T N-Channel Enhancement Mode Field Effect Transistor 60V, 115mA, 2Ω
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...Field-Effect Transistors N-channel Super Junction MOSFET Part No.:LC60R280F Package:TO-220F MAIN CHARACTERISTICS ID:15A VDSS:600V RDSON-typ VGS=10V:274mΩ FEATURES • Low gate charge • Low RDS(on) per chip area(Low FOM) • Very low switching and conduction loss • Extremely high commutation ruggedness APPLICATIONS • Solar inverters • LCD/LED/PDP TV • Telecom/Server Power supplies • AC-DC Power...
...Field-Effect Transistors N-channel Super Junction MOSFET Part No.:LC60R280F Package:TO-220F MAIN CHARACTERISTICS ID:15A VDSS:600V RDSON-typ VGS=10V:274mΩ FEATURES • Low gate charge • Low RDS(on) per chip area(Low FOM) • Very low switching and conduction loss • Extremely high commutation ruggedness APPLICATIONS • Solar inverters • LCD/LED/PDP TV • Telecom/Server Power supplies • AC-DC Power... more
Brand Name:Lingxun
Model Number:LC60R280F
Place of Origin:China
TO-220F Metal Oxide Semiconductor Field Effect Transistors 15A 600V 274mΩ
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TK13A60D(STA4,Q,M) TOSHIBA Field Effect Transistor 13A 600V 0.33 Ohm N-Channel MOS TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Applications Switching Voltage Regulators Description Toshiba π-MOS VII MOSFETs are 10V Gate ...
TK13A60D(STA4,Q,M) TOSHIBA Field Effect Transistor 13A 600V 0.33 Ohm N-Channel MOS TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Applications Switching Voltage Regulators Description Toshiba π-MOS VII MOSFETs are 10V Gate ... more
Brand Name:TOSHIBA
Model Number:TK13A60D
Place of Origin:Original
TK13A60D TOSHIBA Field Effect Transistor
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...Field Effect Transistor Transistor Cigarette Machine Parts A transistor is a semiconductor device used to amplify or switch electronic signals and electrical power. Transistors are one of the basic building blocks of modern electronics. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit. Pocket Transistor Radio The first "prototype" pocket transistor...
...Field Effect Transistor Transistor Cigarette Machine Parts A transistor is a semiconductor device used to amplify or switch electronic signals and electrical power. Transistors are one of the basic building blocks of modern electronics. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit. Pocket Transistor Radio The first "prototype" pocket transistor... more
Brand Name:Upperbond
Model Number:Maker
Place of Origin:China
Brand New Irfz44ns MK8D Field Effect Transistor Transistor Cigarette Machine Parts
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...Power Transistor IPA80R1K4CE Field Effect Transistor Description CoolMOS™ CE is a revolutionary technology for high voltage power MOSFETs. The high voltage capability combines safety with performance and ruggedness to allow stable designs at highest efficiency level. CoolMOS™ 800V CE comes with selected package choice offering the benefit of reduced system costs and higher power...
...Power Transistor IPA80R1K4CE Field Effect Transistor Description CoolMOS™ CE is a revolutionary technology for high voltage power MOSFETs. The high voltage capability combines safety with performance and ruggedness to allow stable designs at highest efficiency level. CoolMOS™ 800V CE comes with selected package choice offering the benefit of reduced system costs and higher power... more
Brand Name:Julun
Model Number:PG-TO 220
Place of Origin:CHINA
800V CoolMOSTM CE Power Transistor IPA80R1K4CE Field Effect Transistor
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... Field Effect Transistor (SiC MOSFET) is a high power, low on resistance, high frequency device with excellent switching performance. It is widely used in Solar Inverter, High-voltage DC/DC Converter, Motor Driver, UPS Power Supply, Switching Power ...
... Field Effect Transistor (SiC MOSFET) is a high power, low on resistance, high frequency device with excellent switching performance. It is widely used in Solar Inverter, High-voltage DC/DC Converter, Motor Driver, UPS Power Supply, Switching Power ... more
Brand Name:REASUNOS
Place of Origin:Guangdong, CN
Minimum Order Quantity:600
N Type 1200V SiC Power Mosfet , Metal Oxide Silicon Field Effect Transistor
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... Body Model: > 4000 V− Machine Model: > 400 V 3. Moisture Sensitivity Level: 1 4. MOS (Field Effect Transistor) / LP3407LT1G Diodes and Rectifiers P channel 30V 4.1A Customer Service: 1. Do you support BOM lists? Of course, we have a professional team to
... Body Model: > 4000 V− Machine Model: > 400 V 3. Moisture Sensitivity Level: 1 4. MOS (Field Effect Transistor) / LP3407LT1G Diodes and Rectifiers P channel 30V 4.1A Customer Service: 1. Do you support BOM lists? Of course, we have a professional team to more
Brand Name:Original
Model Number:LP3407LT1G
Minimum Order Quantity:discussible
SMD MOS Field Effect Transistor SOT-23 LP3407LT1G RoHS
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FDB2614 TO-263 MOS Field Effect Transistor Brand New And Original Integrated Circuit Chip PRODUCT DESCRIPTION Part number FDB2614 is manufactured by FAIRCHILD and distributed by Stjk. As one of the leading distributors of electronic products, we carry man...
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High power NPN epitaxial planar transistor 2SD669A Product Description Model Number 2SD669A Package TO-3P Date Code 18+ Packing Tape and reel/ Tube ...
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