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...Transistor MOSFET N-Channel Transistors 150V 104A TO220AB TIP120 Product Paramenters Manufacturer: Standard Packaging: Tube Product Category: MOSFET Brand: standard RoHS: Details Configuration: Single Technology: Si Fall Time: 77 ns Mounting Style: Through Hole Height: 16.3 mm Package / Case: TO-220-3 Length: 10.67 mm Transistor Polarity: N-Channel Product Type: MOSFET Number of Channels: 1 Channel...
...Transistor MOSFET N-Channel Transistors 150V 104A TO220AB TIP120 Product Paramenters Manufacturer: Standard Packaging: Tube Product Category: MOSFET Brand: standard RoHS: Details Configuration: Single Technology: Si Fall Time: 77 ns Mounting Style: Through Hole Height: 16.3 mm Package / Case: TO-220-3 Length: 10.67 mm Transistor Polarity: N-Channel Product Type: MOSFET Number of Channels: 1 Channel... more
Brand Name:Diode Triode Transistor
Model Number:TIP120
Place of Origin:USA
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... in selling the new and unused, original factory sealed packing electronic components. specialize in IC,MCU,Memory,Module,diode,transistor,IGBT,PCBA, prototype,BOM Kitting. Sunbeam Electronics has a solid team for
... in selling the new and unused, original factory sealed packing electronic components. specialize in IC,MCU,Memory,Module,diode,transistor,IGBT,PCBA, prototype,BOM Kitting. Sunbeam Electronics has a solid team for more
Brand Name:ONSEMI
Model Number:NTTFS2D8N04HL
Place of Origin:China
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J201 JFET N-Channel Transistor General Purpose high power rf transistors Manufacturer: Fairchild Product Category: JFET RoHS: Details Technology: Si Mounting Style: Through Hole Package / Case: TO-92 Transistor Polarity: N-Channel Configuration: Single Vgs...
J201 JFET N-Channel Transistor General Purpose high power rf transistors Manufacturer: Fairchild Product Category: JFET RoHS: Details Technology: Si Mounting Style: Through Hole Package / Case: TO-92 Transistor Polarity: N-Channel Configuration: Single Vgs... more
Brand Name:InterFET
Model Number:J201
Place of Origin:USA
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...is device is suitable for use as a load switch or in PWM applications P Channel Transistor GENERAL FEATURES V DS =- 60V,I D =-50A R DS(ON) < 25mΩ @ V GS =-10V R DS(ON) < 30mΩ @ V GS =-4.5V High Power and ...
...is device is suitable for use as a load switch or in PWM applications P Channel Transistor GENERAL FEATURES V DS =- 60V,I D =-50A R DS(ON) < 25mΩ @ V GS =-10V R DS(ON) < 30mΩ @ V GS =-4.5V High Power and ... more
Brand Name:Hua Xuan Yang
Model Number:50P06D TO-252
Place of Origin:ShenZhen China
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...Channel Transistors TW015N65C,S1F Integrated Circuit Chip TO-247-3 Transistors Product Description Of TW015N65C,S1F TW015N65C,S1F is N-Channel 650 V 100A (Tc) 342W (Tc) Transistors, Through Hole TO-247. Specification Of TW015N65C,S1F Part Number: TW015N65C,S1F High Voltage: VDSS = 650 V Channel-To-Case Thermal Resistance(Max): 0.438°C/W Channel...
...Channel Transistors TW015N65C,S1F Integrated Circuit Chip TO-247-3 Transistors Product Description Of TW015N65C,S1F TW015N65C,S1F is N-Channel 650 V 100A (Tc) 342W (Tc) Transistors, Through Hole TO-247. Specification Of TW015N65C,S1F Part Number: TW015N65C,S1F High Voltage: VDSS = 650 V Channel-To-Case Thermal Resistance(Max): 0.438°C/W Channel... more
Brand Name:Original Factory
Model Number:TW015N65C,S1F
Place of Origin:CN
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... automation equipment must produce more than 200 products in one minute. This speed must be achieved, or it cannot meet the requirements. Transistor output, this is the saying in circuit control. In many automation devices, the circuit ultimately needs to
... automation equipment must produce more than 200 products in one minute. This speed must be achieved, or it cannot meet the requirements. Transistor output, this is the saying in circuit control. In many automation devices, the circuit ultimately needs to more
Brand Name:GINRI
Model Number:JR-XJ
Place of Origin:China
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NTMD4840NR2G MOSFET NFET SO8 30V N - Channel Transistor MOSFET – Power, Dual, N-Channel, SOIC-8 30 V, 7.5 A FEATURES • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate ...
NTMD4840NR2G MOSFET NFET SO8 30V N - Channel Transistor MOSFET – Power, Dual, N-Channel, SOIC-8 30 V, 7.5 A FEATURES • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate ... more
Brand Name:original
Model Number:NTMD4840NR2G
Place of Origin:original
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... 6. 100% RG (gate resistance) tested Technological Parameters: Voltage Rating (DC) 30.0 V Current Rating 21.0 A Number of Channels 1
... 6. 100% RG (gate resistance) tested Technological Parameters: Voltage Rating (DC) 30.0 V Current Rating 21.0 A Number of Channels 1 more
Brand Name:Fairchild
Model Number:FDS6699S
Place of Origin:America
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... Hole TO-220AB Specification: Category Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Mfr Infineon Technologies Series HEXFET® Package Tube FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss)
... Hole TO-220AB Specification: Category Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Mfr Infineon Technologies Series HEXFET® Package Tube FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) more
Brand Name:Infineon Technologies/International Rectifier IOR
Model Number:IRF1404ZPBF
Minimum Order Quantity:1 piece
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...Channel Transistor BSS123LT1G SOT23 Enhanced FET MOSFET 100V 170mA N-Channel Manufacturer: onsemi Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: SOT-23-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel...
...Channel Transistor BSS123LT1G SOT23 Enhanced FET MOSFET 100V 170mA N-Channel Manufacturer: onsemi Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: SOT-23-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel... more
Brand Name:ON
Model Number:BSS123LT1G
Place of Origin:ON
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MRF151G RF Power Field-Effect Transistor 500W, 50V, 175MHz N-Channel Broadband MOSFET replacement for BLF278 Features 1, Guaranteed Performance at 175 MHz, 50 V 2, Output Power — 300 W • Gain — 14 ...
MRF151G RF Power Field-Effect Transistor 500W, 50V, 175MHz N-Channel Broadband MOSFET replacement for BLF278 Features 1, Guaranteed Performance at 175 MHz, 50 V 2, Output Power — 300 W • Gain — 14 ... more
Brand Name:MA-COM
Model Number:MRF151G
Place of Origin:USA
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NTK3134NT5G MOSFET Power Electronics SOT-723 High Power N-Channel Transistor Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20 V Current - Continuous Drain (Id) @ 25°C 750mA (...
NTK3134NT5G MOSFET Power Electronics SOT-723 High Power N-Channel Transistor Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20 V Current - Continuous Drain (Id) @ 25°C 750mA (... more
Brand Name:onsemi
Model Number:NTK3134NT5G
Place of Origin:original
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Product Detail Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 130A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 9.7 ...
Product Detail Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 130A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 9.7 ... more
Brand Name:Original
Model Number:IRFP4668PBF
Place of Origin:US
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IRFR7440TRPBF IC Electronic Components N channel transistor tube Product description rated over a −40°C to +105°C temperature Part number IRFR7440TRPBF is manufactured by INFINEON Company and distributed by AYE. As one of the leading distributors of ...
IRFR7440TRPBF IC Electronic Components N channel transistor tube Product description rated over a −40°C to +105°C temperature Part number IRFR7440TRPBF is manufactured by INFINEON Company and distributed by AYE. As one of the leading distributors of ... more
Brand Name:INFINEON
Model Number:IRFR7440TRPBF
Place of Origin:Shenzhen,China
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..., MOSFETs - Single Mfr Infineon Technologies Series HEXFET® Package Tube FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40 V Current - Continuous Drain (Id) @ 25°C 180A (...
..., MOSFETs - Single Mfr Infineon Technologies Series HEXFET® Package Tube FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40 V Current - Continuous Drain (Id) @ 25°C 180A (... more
Brand Name:Infineon Technologies/International Rectifier IOR
Model Number:IRF1404ZPBF
Place of Origin:CHINA
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FDA59N30 Pnp Power Transistor 59A 300V N-Channel 56 MOhms High Power Transistor Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe,DMOS technology.This advanced technology...
FDA59N30 Pnp Power Transistor 59A 300V N-Channel 56 MOhms High Power Transistor Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe,DMOS technology.This advanced technology... more
Brand Name:ON
Model Number:FDA59N30
Place of Origin:Original
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...Channel Mos Field Effect Transistor ,High Power Transistor -30V/-80A N Channel Mos Field Effect Transistor Description -30V/-80A R DS(ON) = 3.8 mΩ (typ.) @V GS = -10V R DS(ON) = 6.2 mΩ (typ.) @V GS = -4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available N Channel Mos Field Effect Transistor...
...Channel Mos Field Effect Transistor ,High Power Transistor -30V/-80A N Channel Mos Field Effect Transistor Description -30V/-80A R DS(ON) = 3.8 mΩ (typ.) @V GS = -10V R DS(ON) = 6.2 mΩ (typ.) @V GS = -4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available N Channel Mos Field Effect Transistor... more
Brand Name:Hua Xuan Yang
Model Number:G045P03LQ1C2
Place of Origin:ShenZhen China
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... • Logic level compatible ID = -0.3 A • Subminiature surface mount package RDS(ON) ≤ 2.5 Ω (VGS = -10 V) GENERAL DESCRIPTION PINNING SOT23 P-channel, enhancement mode, PIN DESCRIPTION logic level, field-effect power transistor. This
... • Logic level compatible ID = -0.3 A • Subminiature surface mount package RDS(ON) ≤ 2.5 Ω (VGS = -10 V) GENERAL DESCRIPTION PINNING SOT23 P-channel, enhancement mode, PIN DESCRIPTION logic level, field-effect power transistor. This more
Brand Name:NXP
Model Number:BSH201
Place of Origin:CHINA
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...Transistor Integrated Circuits PRODUCT DESCRIPTION MOSFET SC70-6 COMP N-P-CH PRODUCT PROPERTIES Manufacturer: onsemi Product Category: MOSFET Technology: Si Mounting Style: SMD/SMT Package / Case: SOT-323-6 Transistor Polarity: N-Channel, P-Channel Number of Channels: 2 Channel...
...Transistor Integrated Circuits PRODUCT DESCRIPTION MOSFET SC70-6 COMP N-P-CH PRODUCT PROPERTIES Manufacturer: onsemi Product Category: MOSFET Technology: Si Mounting Style: SMD/SMT Package / Case: SOT-323-6 Transistor Polarity: N-Channel, P-Channel Number of Channels: 2 Channel... more
Brand Name:Original
Model Number:FDG6321C
Place of Origin:Original
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N Channel Power Mosfet Transistor , 2SK3561 MOS Field Effect Transistor TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3561 Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.) • High forward ...
N Channel Power Mosfet Transistor , 2SK3561 MOS Field Effect Transistor TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3561 Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.) • High forward ... more
Brand Name:Anterwell
Model Number:2SK3561
Place of Origin:original factory
