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MMBT3904 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • Epitaxial Planar Die Construction • Complementary PNP Type Available (MMBT3906) • Ideal for Medium Power Amplification and Switching • Lead Free/RoHS Compliant (Note 2) • Qualified to AEC-Q101 ...
MMBT3904 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • Epitaxial Planar Die Construction • Complementary PNP Type Available (MMBT3906) • Ideal for Medium Power Amplification and Switching • Lead Free/RoHS Compliant (Note 2) • Qualified to AEC-Q101 ... more
Brand Name:Anterwell
Model Number:MMBT3904-7-F
Place of Origin:original factory
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MMBT3904 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • Epitaxial Planar Die Construction • Complementary PNP Type Available (MMBT3906) • Ideal for Medium Power Amplification and Switching • Lead Free/RoHS Compliant (Note 2) • Qualified to AEC-Q101 ...
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Aviation Parts MJ11033G Darlington Transistors Emitter- Base Voltage 5 V Descriptions of Aviation Parts: High−Current Complementary Silicon Power Transistors are for use as output devices in complementary general purpose amplifier applications. Features...
Aviation Parts MJ11033G Darlington Transistors Emitter- Base Voltage 5 V Descriptions of Aviation Parts: High−Current Complementary Silicon Power Transistors are for use as output devices in complementary general purpose amplifier applications. Features... more
Model Number:MJ11033G
Price:Negotiable
Payment Terms:L/C, T/T
MJ11033G Aviation Parts Darlington Emitter Transistors 5V
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Features: wavelength 808nm output power 15W 375µm fiber bundle diameter 0.22N.A. Applications: Laser pumping Illumination Medical use Material processing Specifications(25℃) Symbol Unit K808F02MN-15.00W Minimum Typical Maximum Parameter CW-Output Power Po...
Features: wavelength 808nm output power 15W 375µm fiber bundle diameter 0.22N.A. Applications: Laser pumping Illumination Medical use Material processing Specifications(25℃) Symbol Unit K808F02MN-15.00W Minimum Typical Maximum Parameter CW-Output Power Po... more
Brand Name:BWT
Model Number:K808F02MN-15.00W
Place of Origin:China
Multi-emitter 808nm Diode Laser Module 15W Fiber Coupled Laser Module
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...Transistors - BJT 50 V Small-Signal BJT Manufacturer: Microchip Product Category: Bipolar Transistors - BJT RoHS: N Technology: Si Mounting Style: Through Hole Package / Case: TO-18-3 Transistor Polarity: NPN Configuration: Single Maximum DC Collector Current: 800 mA Collector- Emitter Voltage VCEO Max: 50 V Collector- Base Voltage VCBO: 75 V Emitter- Base Voltage VEBO: 6 V Collector-Emitter...
...Transistors - BJT 50 V Small-Signal BJT Manufacturer: Microchip Product Category: Bipolar Transistors - BJT RoHS: N Technology: Si Mounting Style: Through Hole Package / Case: TO-18-3 Transistor Polarity: NPN Configuration: Single Maximum DC Collector Current: 800 mA Collector- Emitter Voltage VCEO Max: 50 V Collector- Base Voltage VCBO: 75 V Emitter- Base Voltage VEBO: 6 V Collector-Emitter... more
Brand Name:Microchip / Microsemi
Model Number:JAN2N2222A
Place of Origin:ORIGINAL
JAN2N2222A Bipolar Transistors - BJT 50 V Small-Signal BJT RF Transistors
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...IGBT Transistors Technology: Si Package / Case: TO-247AB-3 Configuration: Single Collector- Emitter Voltage VCEO Max: 600 V Collector-Emitter Saturation Voltage: 2.3 V Maximum Gate Emitter Voltage: - 20 V, + 20 V Continuous Collector Current at 25 C: 120 A
...IGBT Transistors Technology: Si Package / Case: TO-247AB-3 Configuration: Single Collector- Emitter Voltage VCEO Max: 600 V Collector-Emitter Saturation Voltage: 2.3 V Maximum Gate Emitter Voltage: - 20 V, + 20 V Continuous Collector Current at 25 C: 120 A more
Brand Name:ON
Model Number:FGH60N60SFDTU
Place of Origin:Original
600V 60A 378W Solar Inverter IGBT Power Transistor FGH60N60SFDTU
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...Transistors A94 TRANSISTOR (NPN) FEATURE Low Collector-Emitter Saturation Voltage High Breakdown Voltage Marking :A94 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -400 V VCEO Collector-Emitter Voltage -400 V VEBO Emitter...
...Transistors A94 TRANSISTOR (NPN) FEATURE Low Collector-Emitter Saturation Voltage High Breakdown Voltage Marking :A94 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -400 V VCEO Collector-Emitter Voltage -400 V VEBO Emitter... more
Brand Name:Hua Xuan Yang
Model Number:A94
Place of Origin:ShenZhen China
A94 Silicon Power Transistor Emitter Base Voltage -5V For Mobile Power Supply
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...- Base Voltage VEBO: - 5 V Collector-Emitter Saturation Voltage: 2 V Gain Bandwidth Product fT: 30 MHz Maximum Operating Temperature: + 150 C Continuous Collector Current: ...
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...Transistors Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type 2SA1227 ·High power dissipation APPLICATIONS ·For audio frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE VCBO Collector-base voltage Open emitter 140V VCEO Collector-emitter...
...Transistors Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type 2SA1227 ·High power dissipation APPLICATIONS ·For audio frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE VCBO Collector-base voltage Open emitter 140V VCEO Collector-emitter... more
Brand Name:NEC
Model Number:2SC2987
Place of Origin:JAPAN
2SC2987 Silicon NPN Power Transistors , 120W 20A High Power Transistor
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...Transistors A42 TRANSISTOR (NPN) FEATURE Low Collector-Emitter Saturation Voltage High Breakdown Voltage Marking :D965A MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 310 V VCEO Collector-Emitter Voltage 305 V VEBO Emitter...
...Transistors A42 TRANSISTOR (NPN) FEATURE Low Collector-Emitter Saturation Voltage High Breakdown Voltage Marking :D965A MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 310 V VCEO Collector-Emitter Voltage 305 V VEBO Emitter... more
Brand Name:OTOMO
Model Number:A42
Place of Origin:ShenZhen China
600mA Silicon Power Transistor NPN Power Transistor High Current
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...Transistors Through Hole TO-39-3 Manufacturer: original Product Category: Bipolar Transistors - BJT RoHS: N Mounting Style: Through Hole Package / Case: TO-39-3 Transistor Polarity: NPN Configuration: Single Collector- Emitter Voltage VCEO Max: 350 V Collector- Base Voltage VCBO: 450 V Emitter- Base Voltage VEBO: 7 V Collector-Emitter...
...Transistors Through Hole TO-39-3 Manufacturer: original Product Category: Bipolar Transistors - BJT RoHS: N Mounting Style: Through Hole Package / Case: TO-39-3 Transistor Polarity: NPN Configuration: Single Collector- Emitter Voltage VCEO Max: 350 V Collector- Base Voltage VCBO: 450 V Emitter- Base Voltage VEBO: 7 V Collector-Emitter... more
Brand Name:original
Model Number:2N3439
Place of Origin:original
2N3439 Bipolar Junction Transistor IC Chip Through Hole TO393
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...Transistor PNP Surface Mount Transistor MMBT3906 SOT-23 MMBT3906 SOT-23 PNP Surface Mount Transistor MMBT3906 SOT-23 Datasheet.pdf FEATURES Complementary Type The NPN Transistor MMBT3904 is Recommended Epitaxial Planar Die Construction MARKING: 2A MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Parameter Symbol Value Units Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter...
...Transistor PNP Surface Mount Transistor MMBT3906 SOT-23 MMBT3906 SOT-23 PNP Surface Mount Transistor MMBT3906 SOT-23 Datasheet.pdf FEATURES Complementary Type The NPN Transistor MMBT3904 is Recommended Epitaxial Planar Die Construction MARKING: 2A MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Parameter Symbol Value Units Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter... more
Brand Name:Huixin
Model Number:MMBT3906 SOT-23
Place of Origin:China
Silicon SMD Transistor PNP Surface Mount Transistor MMBT3906 SOT-23
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...Transistors - BJT ROHS 2SB1424 PNP Low VCE(sat) Transistor Product Paramenters Manufacturer: ROHM Semiconductor Product Category: Bipolar Transistors - BJT RoHS: Details Mounting Style: SMD/SMT Transistor Polarity: PNP Configuration: Single Collector- Emitter Voltage VCEO Max: 20 V Collector- Base Voltage VCBO: 30 V Emitter- Base Voltage VEBO: 6 V Collector-Emitter...
...Transistors - BJT ROHS 2SB1424 PNP Low VCE(sat) Transistor Product Paramenters Manufacturer: ROHM Semiconductor Product Category: Bipolar Transistors - BJT RoHS: Details Mounting Style: SMD/SMT Transistor Polarity: PNP Configuration: Single Collector- Emitter Voltage VCEO Max: 20 V Collector- Base Voltage VCBO: 30 V Emitter- Base Voltage VEBO: 6 V Collector-Emitter... more
Brand Name:ROHM Semiconductor
Model Number:2SB1424
Place of Origin:JAPAN
2SB1424 ROHM UTC ICS Simbol Transistor Bipolar BJT ROHS 2SB1424 PNP Low VCE
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...LOT SPREAD FOR RELIABLE OPERATION ●LOW BASE-DRIVE REQUIREMENTS Description: The BUF420AW is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capacity. It uses a Cellular Emitter structure with
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KTD1047 NPN Transistor Complementary to KTB817 for 60w High Power Amplifier Application CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 160 V Collector-Emitter Voltage VCEO 140 V Emitter-Base Voltage VEBO 6 V Collector Current DC IC 12 A ...
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...Transistors MJD45H11 Fairchild TO-252 New and Original in stock • Load Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK: “-I” Suffix) • Electrically Similar to Popular MJE45H • Fast Switching Speeds • Low Collector Emitter Saturation Voltage Transistor Type PNP Current - Collector (Ic) (Max) 8A Voltage - Collector Emitter...
...Transistors MJD45H11 Fairchild TO-252 New and Original in stock • Load Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK: “-I” Suffix) • Electrically Similar to Popular MJE45H • Fast Switching Speeds • Low Collector Emitter Saturation Voltage Transistor Type PNP Current - Collector (Ic) (Max) 8A Voltage - Collector Emitter... more
Brand Name:Fairchild
Model Number:MJD45H11
Place of Origin:/
NPN PNP Transistors MJD45H11 Fairchild TO-252 New and Original in stock
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RGBA / RGBW Multi Color High Power LED Diode , Purple LED Doide Emitter Multi Color RGB Purple High Power LED Diode Products’ Features: High Power Emitter LED RGBA/RGBW for stage lighting High light efficacy, low light decay By using original advanced ...
RGBA / RGBW Multi Color High Power LED Diode , Purple LED Doide Emitter Multi Color RGB Purple High Power LED Diode Products’ Features: High Power Emitter LED RGBA/RGBW for stage lighting High light efficacy, low light decay By using original advanced ... more
Brand Name:TYANSHINE
Model Number:TX-BRWG2A140-001
Place of Origin:CN
RGBA / RGBW Multi Color High Power LED Diode , Purple LED Doide Emitter
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BC848C CJ Trans GP BJT NPN 30V 0.1A 250mW 3-Pin SOT-23 T/R Product Technical Specifications EU RoHS Compliant ECCN (US) EAR99 Part Status Active Automotive No PPAP No Type NPN Product Category Bipolar Small Signal Configuration Single Number of Elements...
BC848C CJ Trans GP BJT NPN 30V 0.1A 250mW 3-Pin SOT-23 T/R Product Technical Specifications EU RoHS Compliant ECCN (US) EAR99 Part Status Active Automotive No PPAP No Type NPN Product Category Bipolar Small Signal Configuration Single Number of Elements... more
Brand Name:CJ
Model Number:BC848C
Place of Origin:CHINA
BC848C CJ Transistor Gp Bjt Npn 30V 0.1A 250mW 3-Pin SOT-23 T/R
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...Transistors - BJT BIPOLAR TRANSISTOR NPN SOT-23 Product Attribute Attribute Value Select Attribute Manufacturer: Diodes Incorporated Product Category: Bipolar Transistors - BJT RoHS: Details Mounting Style: SMD/SMT Package / Case: SOT-23-3 Transistor Polarity: NPN Configuration: Single Collector- Emitter Voltage VCEO Max: 65 V Collector- Base Voltage VCBO: 80 V Emitter- Base Voltage VEBO: 6 V Collector-Emitter...
...Transistors - BJT BIPOLAR TRANSISTOR NPN SOT-23 Product Attribute Attribute Value Select Attribute Manufacturer: Diodes Incorporated Product Category: Bipolar Transistors - BJT RoHS: Details Mounting Style: SMD/SMT Package / Case: SOT-23-3 Transistor Polarity: NPN Configuration: Single Collector- Emitter Voltage VCEO Max: 65 V Collector- Base Voltage VCBO: 80 V Emitter- Base Voltage VEBO: 6 V Collector-Emitter... more
Brand Name:Diodes Incorporated
Model Number:BC846B-7-F
Minimum Order Quantity:3000
BC846B-7-F Bipolar Transistors - BJT BIPOLAR TRANSISTOR NPN SOT-23
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...Multi Function Gate Bipolar Transistor Features • Positive temperature coefficient • Fast Switching • Low VCE(sat) • Reliable and Rugged PFC applications • Uninterruptible power supplies • Solar inverters Trench and field-stop technology • Low collector to emitter...
...Multi Function Gate Bipolar Transistor Features • Positive temperature coefficient • Fast Switching • Low VCE(sat) • Reliable and Rugged PFC applications • Uninterruptible power supplies • Solar inverters Trench and field-stop technology • Low collector to emitter... more
Brand Name:Lingxun
Model Number:LGT40N65HB
Place of Origin:China
Practical 60KHz Inverter IGBT , Multi Function Gate Bipolar Transistor