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...Applications Description: TrenchStop® Reverse Conducting (RC-)IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • Trench and Fieldstop technology for 1600 V
...Applications Description: TrenchStop® Reverse Conducting (RC-)IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • Trench and Fieldstop technology for 1600 V more
Brand Name:Infineon Technoctifier Ilogies/International ReOR
Model Number:IHW30N160R2FKSA1
Minimum Order Quantity:1 piece
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.gtr-container { font-family: 'Arial', sans-serif; color: #333; line-height: 1.6; max-width: 1000px; margin: 0 auto; padding: 20px; background-color: #fff; border: 1px solid #e0e0e0; box-shadow: 0 2px 5px rgba(0,0,0,0.05); } .gtr-heading { font-weight: 700...
.gtr-container { font-family: 'Arial', sans-serif; color: #333; line-height: 1.6; max-width: 1000px; margin: 0 auto; padding: 20px; background-color: #fff; border: 1px solid #e0e0e0; box-shadow: 0 2px 5px rgba(0,0,0,0.05); } .gtr-heading { font-weight: 700... more
Brand Name:ZFeng
Payment Terms:L/C,D/A,D/P,T/T,Western Union,MoneyGram
Delivery Time:3 Days
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Product Range IGBT CoolMOS Discrete Semiconductors SPW35N60C3 MOSFET N-Ch 650V 34.6A TO247-3 App Characteristics New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv /dt rated Ultra low effective capacitances ...
Product Range IGBT CoolMOS Discrete Semiconductors SPW35N60C3 MOSFET N-Ch 650V 34.6A TO247-3 App Characteristics New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv /dt rated Ultra low effective capacitances ... more
Brand Name:Infineon Technologies
Model Number:SPW35N60C3
Minimum Order Quantity:Negotiable
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Automotive IGBT Modules F3L11MR12W2M1HB19 Low Power Discrete Semiconductor Modules [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + ...
Automotive IGBT Modules F3L11MR12W2M1HB19 Low Power Discrete Semiconductor Modules [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + ... more
Brand Name:Original Factory
Model Number:F3L11MR12W2M1HB19
Place of Origin:CN
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6MBP30VSC060-50 Brand New Genuine Original IC Stock Professional BOM Supplier Spot Goods Find information here in stock.xlsx Product Attributes Features •600V-10A 3-phase IGBT inverter bridge including control ICs for gate driving and protection •Easy PCB ...
6MBP30VSC060-50 Brand New Genuine Original IC Stock Professional BOM Supplier Spot Goods Find information here in stock.xlsx Product Attributes Features •600V-10A 3-phase IGBT inverter bridge including control ICs for gate driving and protection •Easy PCB ... more
Model Number:6MBP30VSC060-50
Place of Origin:China
Certification:CE
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TGF2023-2-10 TriQuint Semiconduct 20211200A/N Discrete Semiconductor Devices PRODUCT DESCRIPTION Part number TGF2023-2-10 is manufactured by TriQuint Semiconduct and distributed by Stjk. As one of the leading distributors of electronic products, we carry...
TGF2023-2-10 TriQuint Semiconduct 20211200A/N Discrete Semiconductor Devices PRODUCT DESCRIPTION Part number TGF2023-2-10 is manufactured by TriQuint Semiconduct and distributed by Stjk. As one of the leading distributors of electronic products, we carry... more
Brand Name:TriQuint Semiconduct
Model Number:TGF2023-2-10
Place of Origin:China
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... pin against ESD and high surge events. This robust device can absorb maximum 12A surge current per IEC 61000-4-5 (tP=8/20μs) without performance degradation and a minimum ±30kV ESD per IEC ...
... pin against ESD and high surge events. This robust device can absorb maximum 12A surge current per IEC 61000-4-5 (tP=8/20μs) without performance degradation and a minimum ±30kV ESD per IEC ... more
Brand Name:Littelfuse
Model Number:AQRV05-4HTG
Place of Origin:USA
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A70QS175-4 SEMICONDUCTOR PROTECTION FUSES 700V AC 175A , 650V DC ratin A70Q Amp-trap® Semiconductor Protection fuses were developed for inverter applications requiring extremely low I2t. A70Q fuses provide the most responsive protection for applications...
A70QS175-4 SEMICONDUCTOR PROTECTION FUSES 700V AC 175A , 650V DC ratin A70Q Amp-trap® Semiconductor Protection fuses were developed for inverter applications requiring extremely low I2t. A70Q fuses provide the most responsive protection for applications... more
Brand Name:SEMICONDUCTOR
Model Number:A70QS175-4
Place of Origin:Malaysia
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...Discrete Semiconductor products are designed for a wide range of applications, offering high performance, reliability and low power consumption. Our products include Transistors, Temperature Control Devices, Optoelectronic Devices, Capacitors and Frequency Control Devices. Our Transistor product line offers a broad range of products including BJT, MOSFET, IGBT...
...Discrete Semiconductor products are designed for a wide range of applications, offering high performance, reliability and low power consumption. Our products include Transistors, Temperature Control Devices, Optoelectronic Devices, Capacitors and Frequency Control Devices. Our Transistor product line offers a broad range of products including BJT, MOSFET, IGBT... more
Brand Name:TI
Model Number:ESD401DPYR2
Place of Origin:USA
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... C Configuration 6-Pack Transistor Polarity N and P-Channel Id - Continuous Drain Current 3.1 mA Operating Supply Voltage 300 V Subcategory Discrete Semiconductor Modules < DIPIPM >
... C Configuration 6-Pack Transistor Polarity N and P-Channel Id - Continuous Drain Current 3.1 mA Operating Supply Voltage 300 V Subcategory Discrete Semiconductor Modules < DIPIPM > more
Model Number:SLIMDIP-S
Minimum Order Quantity:1 pcs
Price:Bargain
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...IGBT IXGH24 IGBT 1700V 50A 250W TO247AD Discrete Semiconductor Products Specification:High Voltage IGBT NPT 1700 V 50 A 250 W Through Hole TO-247AD Part number IXGH24N170 Category Discrete Semiconductor Products Transistors - IGBTs - Single Mfr IXYS Series - Package Tube Part Status Active IGBT...
...IGBT IXGH24 IGBT 1700V 50A 250W TO247AD Discrete Semiconductor Products Specification:High Voltage IGBT NPT 1700 V 50 A 250 W Through Hole TO-247AD Part number IXGH24N170 Category Discrete Semiconductor Products Transistors - IGBTs - Single Mfr IXYS Series - Package Tube Part Status Active IGBT... more
Brand Name:IXYS
Model Number:IXGH24N170
Place of Origin:CHINA
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...IGBT Discrete Semiconductor Module MCC44-14IO8B IXYS Discrete Semiconductor Modules 44 Amp Product Name IXYS IGBT Module Part number MCC4414IO8B MCC44-14I08B Manufacturer brand IXYS Description IXYS High Frequency Thyristor Condition 100% brand new Warranty one year Application 1. AC Drive inverter 2. Servo control 3. UPS, Uninterruptible Power Supply 4. Welding Power...
...IGBT Discrete Semiconductor Module MCC44-14IO8B IXYS Discrete Semiconductor Modules 44 Amp Product Name IXYS IGBT Module Part number MCC4414IO8B MCC44-14I08B Manufacturer brand IXYS Description IXYS High Frequency Thyristor Condition 100% brand new Warranty one year Application 1. AC Drive inverter 2. Servo control 3. UPS, Uninterruptible Power Supply 4. Welding Power... more
Brand Name:Mitsubishi
Model Number:MCC44-14IO8B
Place of Origin:Japan
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... switching, in an electronic circuit. Some common examples of Discrete Semiconductor Products include diodes, transistors, and thyristors. Discrete Semiconductor Products common features include: - Maximum voltage and current ratings: This refers to the
... switching, in an electronic circuit. Some common examples of Discrete Semiconductor Products include diodes, transistors, and thyristors. Discrete Semiconductor Products common features include: - Maximum voltage and current ratings: This refers to the more
Brand Name:Analog Devices
Model Number:LTC4364IDE-2#PBF
Place of Origin:MX/CN/MY
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... (Ic) (Max) 80 A Current - Collector Pulsed (Icm) 300 A Vce(on) (Max) @ Vge, Ic 1.35V @ 15V, 75A Power - Max 469 W Switching Energy 1.01mJ (on)
... (Ic) (Max) 80 A Current - Collector Pulsed (Icm) 300 A Vce(on) (Max) @ Vge, Ic 1.35V @ 15V, 75A Power - Max 469 W Switching Energy 1.01mJ (on) more
Brand Name:onsemi
Model Number:FGHL75T65LQDTL4
Minimum Order Quantity:50pcs
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... Trench/Feld stopp IGBT 4und Emitter Controlled Diode 1 TechnischeInformation/TechnicalInformation FF300R17KE4 IGBT-Module IGBT-modules Insulated-gate bipolar transistors (IGBTs) are three-terminal power semiconductor devices primarily used as
... Trench/Feld stopp IGBT 4und Emitter Controlled Diode 1 TechnischeInformation/TechnicalInformation FF300R17KE4 IGBT-Module IGBT-modules Insulated-gate bipolar transistors (IGBTs) are three-terminal power semiconductor devices primarily used as more
Brand Name:INFINEON
Model Number:FF300R17KE4
Place of Origin:Original
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IXFN38N100Q2 Discrete Semiconductor Modules 38 Amps 1000V 0.25 Rds Manufacturer: IXYS Product Category: Discrete Semiconductor Modules RoHS: Details Product: Power MOSFET Modules Technology: Si Vgs - Gate-Source Voltage: - 30 V, + 30 V Mounting Style: ...
IXFN38N100Q2 Discrete Semiconductor Modules 38 Amps 1000V 0.25 Rds Manufacturer: IXYS Product Category: Discrete Semiconductor Modules RoHS: Details Product: Power MOSFET Modules Technology: Si Vgs - Gate-Source Voltage: - 30 V, + 30 V Mounting Style: ... more
Brand Name:IXYS
Model Number:IXFN38N100Q2
Place of Origin:USA
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...IGBT Power Semiconductor with High Input Impedance in TO-247 Package Product Description: The Inverter IGBT has a Collector-Emitter Voltage ranging from 650V to 1200V, making it an ideal choice for high voltage applications. It features an IGBT device type that allows for excellent current sharing in parallel operation, resulting in consistent performance. With a switching frequency of 20KHz to 60KHz, the Inverter IGBT...
...IGBT Power Semiconductor with High Input Impedance in TO-247 Package Product Description: The Inverter IGBT has a Collector-Emitter Voltage ranging from 650V to 1200V, making it an ideal choice for high voltage applications. It features an IGBT device type that allows for excellent current sharing in parallel operation, resulting in consistent performance. With a switching frequency of 20KHz to 60KHz, the Inverter IGBT... more
Brand Name:Lingxun
Model Number:LGT20N65B
Place of Origin:China
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... Model Supply and Demand Status Limited Fake Threat In the Open Market 69 pct. Popularity Low Manufacturer Toshiba Semiconductor and Storage Category Discrete Semiconductor Products Family IGBTs - Single
... Model Supply and Demand Status Limited Fake Threat In the Open Market 69 pct. Popularity Low Manufacturer Toshiba Semiconductor and Storage Category Discrete Semiconductor Products Family IGBTs - Single more
Brand Name:TOSHIBA
Model Number:GT50N322A
Place of Origin:N/S
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.../Dram/Sdram/Vram/Sram/Modules/Diodes/Switches/Transistors/Crystals/Flash/Eprom/Processors/Relays/Fuses/Sgram/Discretes/Passives/Harddisk/Memorycard/Battery/LCD/PCBboard/Wire&Cable/Power/LCM… Only 100% New and
.../Dram/Sdram/Vram/Sram/Modules/Diodes/Switches/Transistors/Crystals/Flash/Eprom/Processors/Relays/Fuses/Sgram/Discretes/Passives/Harddisk/Memorycard/Battery/LCD/PCBboard/Wire&Cable/Power/LCM… Only 100% New and more
Brand Name:Standard Brand
Model Number:ND261N20K
Place of Origin:MALAYSIA
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EP1AGX20CF780C6N IGBT Power Module - High Efficiency and Reliable Performance Product Listing: EP1AGX20CF780C6N IGBT Power Module The EP1AGX20CF780C6N IGBT power module is a high-speed switching device designed for efficient power conversion and low power ...
EP1AGX20CF780C6N IGBT Power Module - High Efficiency and Reliable Performance Product Listing: EP1AGX20CF780C6N IGBT Power Module The EP1AGX20CF780C6N IGBT power module is a high-speed switching device designed for efficient power conversion and low power ... more
Brand Name:Intel
Model Number:EP1AGX20CF780C6N
Place of Origin:original
