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High performance 0.8 - 2 GHz L Band Power Amplifier Psat 57 dBm High Power RF Amplifier For Test and Measurement Description The 0.8-2 GHz Psat 57 dBm RF Power Amplifier Box is a high-performance amplifier designed for a wide range of RF applications, including communications, radar, and electronic warfare. This amplifier provides exceptional power...
High performance 0.8 - 2 GHz L Band Power Amplifier Psat 57 dBm High Power RF Amplifier For Test and Measurement Description The 0.8-2 GHz Psat 57 dBm RF Power Amplifier Box is a high-performance amplifier designed for a wide range of RF applications, including communications, radar, and electronic warfare. This amplifier provides exceptional power... more
Brand Name:SWT
Model Number:SW-PA-8002000-60C
Place of Origin:China
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500Mhz - 2400MHz High Power RF Power Amplifier Smaller Size LAN 28V DC Features: The integrated Noise source and RF PA in one house, smaller size and only connect DC28,6A to it Prevent the interference of high radiated RF power to monitoring-unit and PA...
500Mhz - 2400MHz High Power RF Power Amplifier Smaller Size LAN 28V DC Features: The integrated Noise source and RF PA in one house, smaller size and only connect DC28,6A to it Prevent the interference of high radiated RF power to monitoring-unit and PA... more
Brand Name:Kimpok Technology / OEM
Model Number:KP-LAM800-50W
Place of Origin:China
500Mhz-2400MHz High Power RF Amplifier Smaller Size LAN 28V DC
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500Mhz - 2400MHz High Power RF Power Amplifier Smaller Size LAN 28V DC Features: The integrated Noise source and RF PA in one house, smaller size and only connect DC28,6A to it Prevent the interference of high radiated RF power to monitoring-unit and PA...
500Mhz - 2400MHz High Power RF Power Amplifier Smaller Size LAN 28V DC Features: The integrated Noise source and RF PA in one house, smaller size and only connect DC28,6A to it Prevent the interference of high radiated RF power to monitoring-unit and PA... more
Brand Name:Ding Shen
Model Number:DS-LAM800-50W
Place of Origin:China
500Mhz-2400MHz High Power RF Amplifier Smaller Size LAN 28V DC
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Double Sided High Frequency Pcb With RF Microwave For High Power RF Amplifier Quick Detail : Type Pcb Material Rogers Layer 2 Size 6*6cm Permittivity 2.2 Color Green Surface Finish Immersion Tin Parameter: Model Parameter thickness(mm) Permittivity(ER) F4B...
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... power output and anti-interference performance, it meets the demanding requirements in industrial, communication and military fields. Core Performance Highlights Precise ...
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...RF Power Amplifier PA , RF Power Amplifier Module VBE RF Power Amplifier Module Introdutions: VBE solutions of RF modules including radio frequency signal source,radio frequency power amplifier(PA),low noise amplifier(LNA), Radio Frequency outdoor unit(ODU) and customized radio frequency module solution,the frequency band cover P-wave band,L-wave band,S-wave band,Ku-wave band and Ka-wave band and so on,broadly applying in high...
...RF Power Amplifier PA , RF Power Amplifier Module VBE RF Power Amplifier Module Introdutions: VBE solutions of RF modules including radio frequency signal source,radio frequency power amplifier(PA),low noise amplifier(LNA), Radio Frequency outdoor unit(ODU) and customized radio frequency module solution,the frequency band cover P-wave band,L-wave band,S-wave band,Ku-wave band and Ka-wave band and so on,broadly applying in high... more
Brand Name:VBE
Model Number:VBPA14000M
Place of Origin:China
KU Band 12GHz High Power Rf Amplifier , Rf Amplifier Module
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...High Frequency PCB on Double Sided Copper With Green Mask for High Power RF Amplifiers (Printed Circuit Boards are custom-made products, the picture and parameters shown are just for reference) RT/duroid 6035HTC high frequency circuit materials of Rogers Corporation are ceramic filled PTFE composites for use in high power RF...
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High-power 5.2 GHz 30W RF Power Amplifier Module Product Parameters Frequency 5.2 GHz Test voltage 28 V Current 2.8 A Output 30 W Gain 45 dB Output stability 1 dB Connector SMA / Female Output connector VSWR ≤1.30 (No power and VNA test) Power supply wire Red+Black+Enable wire Enable Control High...
High-power 5.2 GHz 30W RF Power Amplifier Module Product Parameters Frequency 5.2 GHz Test voltage 28 V Current 2.8 A Output 30 W Gain 45 dB Output stability 1 dB Connector SMA / Female Output connector VSWR ≤1.30 (No power and VNA test) Power supply wire Red+Black+Enable wire Enable Control High... more
Brand Name:flysafe
Place of Origin:Guangdong, China
Minimum Order Quantity:1
High Power RF Amplifier Signal Jammer Module 2.4 Ghz 5.2 GHz 30W
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...power amplifier (UWPA) is a power amplifier with ultra wide bandwidth designed to amplify signals across a wide range of frequencies while maintaining high efficiency, linearity, and low distortion. It was specifically designed for RF jamming, but has also
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... Mega Source Electronic Co., LTD specializes in High frequency microwave devices: These products are widely used in micro-cellular amplifier, CATV radio and television transmitters, GSM / CDMA / PHS repeaters, trunk amplifiers, tower mounted amplifiers,
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...High Power RF Jamming Module Working Frequency 20MHz~2700MHz Product Description: Our 100W Blocking Power Amplifier Module is a high-performance LTE NR PA Module for communication use. It comes with a working voltage of DC 28V and a working frequency of 20MHz~2700MHz, enabling a maximum working current of ≤10A. This 100W Blocking Power Amplifier Module also provides an output power of 50dBm, and its module size is 200×90×24mm. It is highly
...High Power RF Jamming Module Working Frequency 20MHz~2700MHz Product Description: Our 100W Blocking Power Amplifier Module is a high-performance LTE NR PA Module for communication use. It comes with a working voltage of DC 28V and a working frequency of 20MHz~2700MHz, enabling a maximum working current of ≤10A. This 100W Blocking Power Amplifier Module also provides an output power of 50dBm, and its module size is 200×90×24mm. It is highly more
Brand Name:EST
Model Number:100W-300MHz
Place of Origin:CHINA
50dBm High Power RF Jamming Module Working Frequency 20MHz~2700MHz
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... applications. It is small in size (170*110*20mm) and is housed in a durable aluminum case. With its low input/output VSWR of less than 1.8, it offers high linearity and low noise figure of less than 3dB. It supports a wide range of input power of
... applications. It is small in size (170*110*20mm) and is housed in a durable aluminum case. With its low input/output VSWR of less than 1.8, it offers high linearity and low noise figure of less than 3dB. It supports a wide range of input power of more
Brand Name:MXT
Model Number:TDD4200T4400M 10W-28V
Place of Origin:China
Durable 4G Broadband HF Amplifier , Practical High Frequency RF Amplifier
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...tested and quality controlled prior to shipment Product Details: Product name: DALEE RF Connector Secification: Three generation Type : Female Certification: ISO9001,UL,ROHS and the latest REACH Voltage Rating: 60 VAC ...
...tested and quality controlled prior to shipment Product Details: Product name: DALEE RF Connector Secification: Three generation Type : Female Certification: ISO9001,UL,ROHS and the latest REACH Voltage Rating: 60 VAC ... more
Brand Name:DALEE
Model Number:DL50011204
Place of Origin:Guangdong,China(Mainland)
One Generation High Power RF Connectors SMA To IPEX RF Wire Connection
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Powered Audio Amplifier , Living Event Switch Mode High Power Audio Amplifier With Class TD Quick Detail: Place of Origin : Guangzhou , China Brand name : HLA Model Number: SA-1250 Service Type: OEM or ODM Description: Nowadays, in professional sound industry, more and more people are seeking for amplifiers with light weight, high power output, and high efficiency. Switch mode power amplifiers...
Powered Audio Amplifier , Living Event Switch Mode High Power Audio Amplifier With Class TD Quick Detail: Place of Origin : Guangzhou , China Brand name : HLA Model Number: SA-1250 Service Type: OEM or ODM Description: Nowadays, in professional sound industry, more and more people are seeking for amplifiers with light weight, high power output, and high efficiency. Switch mode power amplifiers... more
Brand Name:HLA
Model Number:SA-1250
Place of Origin:China
Powered Audio Amplifier , Living Event Switch Mode High Power Audio Amplifier With Class TD
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...high power RF Load waterproof IP67 with PIM 150dBc 4.3-10 female connector used in 2G,3G,4G 1. 200w high power RF load , the PIM is 150-160dBc .With very good performance . 2. The VSWR is <1.2 3. Intermodulation is 150-160dBc@2X43dBm 4. IP 67 , outsider , good waterproof. 5. Frequency :0-3000G New features 1. Integrates 2 ~8 Wireless Bands 2. More than 50~100 dB Input Isolation 3. High Average Power...
...high power RF Load waterproof IP67 with PIM 150dBc 4.3-10 female connector used in 2G,3G,4G 1. 200w high power RF load , the PIM is 150-160dBc .With very good performance . 2. The VSWR is <1.2 3. Intermodulation is 150-160dBc@2X43dBm 4. IP 67 , outsider , good waterproof. 5. Frequency :0-3000G New features 1. Integrates 2 ~8 Wireless Bands 2. More than 50~100 dB Input Isolation 3. High Average Power... more
Brand Name:LENOLINK
Model Number:100W RF LOAD with 4.3-10 connector
Place of Origin:CHINA
100W High Power RF Load IP65 Water Protection PIM 15DBC In 2G , 3G , 4G
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...RF Power Transistor - High Power High Reliability The AD9361BBCZ is a high-power, high-efficiency N-channel RF power transistor designed for use in the 900 MHz ISM band. The device features a wide gate voltage range and excellent thermal stability. It is ideal for applications such as RF power amplifiers, cellular base stations and other wireless communication applications. Features: • High power capability: Pout = 10 W • High
...RF Power Transistor - High Power High Reliability The AD9361BBCZ is a high-power, high-efficiency N-channel RF power transistor designed for use in the 900 MHz ISM band. The device features a wide gate voltage range and excellent thermal stability. It is ideal for applications such as RF power amplifiers, cellular base stations and other wireless communication applications. Features: • High power capability: Pout = 10 W • High more
Brand Name:Analog Devices Inc.
Model Number:AD9361BBCZ
Place of Origin:Multi-origin
AD9361BBCZ High Power Rf Transistor
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... to 5725-5850MHz signal. This module has the advantages of high average output power, and good in band flatness. Features Frequency Range 5725-5850MHz Operation Voltage 28V Output power 46dBm Power flatness <1dB Packing & Delivery To better ensure the
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... InGaP/GaAs HBT process. This amplifier provides a typical gain of 35dB and P1dB power of 33dBm, typical bias condition is 5V at 320mA. The input are internally matched to 50Ω and require a minimum of external matching components to ...
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Rf Resistor 50 ohm 100w Ceramic High Power Rf Flange 50 ohm Resistor Description The RIG22 is a high-performance power resistor engineered for applications requiring precision, durability, and superior heat resistance. Manufactured by BOCHEN, the RIG22 features a robust ceramic core structure with flame-retardant coating, ensuring excellent thermal conductivity and mechanical stability under continuous load. With a power...
Rf Resistor 50 ohm 100w Ceramic High Power Rf Flange 50 ohm Resistor Description The RIG22 is a high-performance power resistor engineered for applications requiring precision, durability, and superior heat resistance. Manufactured by BOCHEN, the RIG22 features a robust ceramic core structure with flame-retardant coating, ensuring excellent thermal conductivity and mechanical stability under continuous load. With a power... more
Brand Name:BOCHEN
Model Number:RIG22
Place of Origin:Chengdu
Rf Resistor 50 ohm 100w Ceramic High Power Rf Flange 50 ohm Resistor
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...RF Transistors Manufacturer: DIODES Product Category: P-CHANNEL ENHANCEMENT RoHS: Details Mounting Style: - Package / Case: 16NSOP Packaging: Standard Unit Weight: - oz This transistor is suitable for RF power amplifiers in various applications such as wireless communication, broadcasting, and industrial RF equipment. ● P-channel enhancement mode ● DMOS transistor technology ● High power
...RF Transistors Manufacturer: DIODES Product Category: P-CHANNEL ENHANCEMENT RoHS: Details Mounting Style: - Package / Case: 16NSOP Packaging: Standard Unit Weight: - oz This transistor is suitable for RF power amplifiers in various applications such as wireless communication, broadcasting, and industrial RF equipment. ● P-channel enhancement mode ● DMOS transistor technology ● High power more
Brand Name:Diodes Incorporated
Model Number:BS816A-1
Place of Origin:USA
BS816A-1 P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR high power rf transistor