-
...High Frequency RF Power Amplifier for electronic warfare, and other specialized RF System Description This specific introduction pertains to a 100W continuous wave (CW) high-frequency RF power amplifier operating in the 4-12 GHz frequency range. Here is a detailed description: Frequency Range: This amplifier operates within the 4-12 GHz frequency range, making it suitable for high-frequency RF...
...High Frequency RF Power Amplifier for electronic warfare, and other specialized RF System Description This specific introduction pertains to a 100W continuous wave (CW) high-frequency RF power amplifier operating in the 4-12 GHz frequency range. Here is a detailed description: Frequency Range: This amplifier operates within the 4-12 GHz frequency range, making it suitable for high-frequency RF... more
Brand Name:SWT
Model Number:SW-PA-400012000-50C
Place of Origin:China
-
...high frequency RF power supply,high performance,distinct result, Spider Vein Removal Machine Padel switch for better and convenient operating experience(foot on:operating,foot off,stopping). Medical pen for treatment,with rotary connector. A pack of needles(Diameter:0.01mm). Output frequency testing. Working principle The micro-dots high-frequency produces a 30MHz ultra high frequency...
...high frequency RF power supply,high performance,distinct result, Spider Vein Removal Machine Padel switch for better and convenient operating experience(foot on:operating,foot off,stopping). Medical pen for treatment,with rotary connector. A pack of needles(Diameter:0.01mm). Output frequency testing. Working principle The micro-dots high-frequency produces a 30MHz ultra high frequency... more
Brand Name:Forimi
Model Number:FMV-I
Place of Origin:China
-
...Power MOSFET DESCRIPTION The HXY12N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FEATURES ● VDS =100V,ID =12A RDS(ON) < 130mΩ @ VGS =10V Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power...
...Power MOSFET DESCRIPTION The HXY12N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FEATURES ● VDS =100V,ID =12A RDS(ON) < 130mΩ @ VGS =10V Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power... more
Brand Name:Hua Xuan Yang
Model Number:12N10
Place of Origin:ShenZhen China
-
'
Brand Name:VBE
Model Number:VBE6006H
Place of Origin:CHINA
-
RF Power Divider 2~8G 4Way Performance Item Spec Item Spec Impedance 50Ω Connector Type SMA(F) Freq Range 2～8GHz Amplitude Balance ≤±5° VSWR ≤1.45:1 Phase Balance ≤±0.5dB Insertion Loss ≤1.2dB(not Include Theory 6dB) Power Handling 10W/2W Isolation ≥18dB ...
RF Power Divider 2~8G 4Way Performance Item Spec Item Spec Impedance 50Ω Connector Type SMA(F) Freq Range 2～8GHz Amplitude Balance ≤±5° VSWR ≤1.45:1 Phase Balance ≤±0.5dB Insertion Loss ≤1.2dB(not Include Theory 6dB) Power Handling 10W/2W Isolation ≥18dB ... more
Brand Name:Charter Leader
Model Number:CLP-2-8-4Way PD
Place of Origin:China
-
Transistor IRLR7843TRPBF TO-252 30V 161A Power MOSFET for Telecom and Industrial Use IRLR7843PbF IRLU7843PbF Description Power MOSFET Selection for Non-Isolated DC/DC Converters Absolute Maximum Ratings Parameter Max. Units VDS Drain-to-Source Voltage 30...
Transistor IRLR7843TRPBF TO-252 30V 161A Power MOSFET for Telecom and Industrial Use IRLR7843PbF IRLU7843PbF Description Power MOSFET Selection for Non-Isolated DC/DC Converters Absolute Maximum Ratings Parameter Max. Units VDS Drain-to-Source Voltage 30... more
Brand Name:Infineon
Model Number:IRLR7843TRPBF
Place of Origin:Original Factory
-
...RF Power Transistors Product Description: The HMC789ST89ETR RF Power Transistors are high-performance, high-frequency, high-power transistors suitable for use in amplifier applications. The HMC789ST89ETR offers excellent gain and power performance, as well as low noise, which makes it ideal for use in both linear and power amplifier applications. Features: - High-performance, high-frequency, high-power transistor...
...RF Power Transistors Product Description: The HMC789ST89ETR RF Power Transistors are high-performance, high-frequency, high-power transistors suitable for use in amplifier applications. The HMC789ST89ETR offers excellent gain and power performance, as well as low noise, which makes it ideal for use in both linear and power amplifier applications. Features: - High-performance, high-frequency, high-power transistor... more
Brand Name:Analog Devices Inc.
Model Number:HMC789ST89ETR
Place of Origin:Multi-origin
-
Transistor IRLR7843TRPBF TO-252 30V 161A Power MOSFET for Telecom and Industrial Use IRLR7843PbF IRLU7843PbF Description Power MOSFET Selection for Non-Isolated DC/DC Converters Absolute Maximum Ratings Parameter Max. Units VDS Drain-to-Source Voltage 30...
Transistor IRLR7843TRPBF TO-252 30V 161A Power MOSFET for Telecom and Industrial Use IRLR7843PbF IRLU7843PbF Description Power MOSFET Selection for Non-Isolated DC/DC Converters Absolute Maximum Ratings Parameter Max. Units VDS Drain-to-Source Voltage 30... more
Brand Name:Infineon
Model Number:IRLR7843TRPBF
Place of Origin:Original Factory
-
#detail_decorate_root .magic-0{vertical-align:top}#detail_decorate_root .magic-1{padding:0;margin:0;color:#333;font-size:14px;padding-left:4px;font-weight:bold;white-space:pre-wrap}#detail_decorate_root .magic-2{text-align:center}#detail_decorate_root ....
#detail_decorate_root .magic-0{vertical-align:top}#detail_decorate_root .magic-1{padding:0;margin:0;color:#333;font-size:14px;padding-left:4px;font-weight:bold;white-space:pre-wrap}#detail_decorate_root .magic-2{text-align:center}#detail_decorate_root .... more
Brand Name:original
Place of Origin:China
Manufacturer Part Number:RA60H1317M
-
BLF174XRS N/A Electronic Components IC MCU Microcontroller Integrated Circuits BLF174XRS #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border-bottom-...
BLF174XRS N/A Electronic Components IC MCU Microcontroller Integrated Circuits BLF174XRS #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border-bottom-... more
Brand Name:KAIGENG
Model Number:BLF174XRS
Place of Origin:Malaysia
-
... specializes in High frequency microwave devices: These products are widely used in micro-cellular amplifier, CATV radio and television transmitters, GSM / CDMA / PHS ...
... specializes in High frequency microwave devices: These products are widely used in micro-cellular amplifier, CATV radio and television transmitters, GSM / CDMA / PHS ... more
Brand Name:MOTOROLA
Model Number:MRW53601
Place of Origin:MALAYSIA
-
...High Electron Mobility GAN RF Power Transistor Product Description Innotion’s YP01401650T is a 50-watt, unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities with frequency up to 4000MHz. The transistor is supplied in a ceramic /metal flange package. Votage 28V Pout 50W Features: High
...High Electron Mobility GAN RF Power Transistor Product Description Innotion’s YP01401650T is a 50-watt, unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities with frequency up to 4000MHz. The transistor is supplied in a ceramic /metal flange package. Votage 28V Pout 50W Features: High more
Brand Name:INNOTION
Model Number:YP01401650T
Place of Origin:Jiangsu, China
-
... applications FEATURES of RD06HVF1 High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION of RD06HVF1 For output stage of high power amplifiers in VHF band mobile radio sets. List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND
... applications FEATURES of RD06HVF1 High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION of RD06HVF1 For output stage of high power amplifiers in VHF band mobile radio sets. List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND more
Brand Name:Mitsubishi
Model Number:RD06HVF1
Place of Origin:CN
-
...RF POWER TRANSISTOR MOSFET Manufacturer: TT Electronics Product Category: TT Electronics Brand: Semelab / TT Electronics The D2085UK is a push-pull RF power transistor MOSFET that operates at a voltage of 28V and can handle a power output of 120W. It is designed for use in the frequency range of 1MHz to 1000MHz. Silicon MOSFET: MRF140: RF MOSFET Line, 30W, up to 400MHz, 28V [1] MRF134: Broadband RF Power
...RF POWER TRANSISTOR MOSFET Manufacturer: TT Electronics Product Category: TT Electronics Brand: Semelab / TT Electronics The D2085UK is a push-pull RF power transistor MOSFET that operates at a voltage of 28V and can handle a power output of 120W. It is designed for use in the frequency range of 1MHz to 1000MHz. Silicon MOSFET: MRF140: RF MOSFET Line, 30W, up to 400MHz, 28V [1] MRF134: Broadband RF Power more
Brand Name:Semelab / TT Electronics
Model Number:D2085UK
Place of Origin:UK
-
...RF power transistor MOSFETS The PD85035-E is a common source N-channel,enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies...
...RF power transistor MOSFETS The PD85035-E is a common source N-channel,enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies... more
Brand Name:Texas Instruments
Model Number:PD85035S-E
Place of Origin:Malaysia
-
...Transistors RF Transistor NPN 15V 18mA 9GHz 150mW Surface Mount NPN 9 GHz wideband transistor FEATURES • Low current consumption • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability • SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for low power amplifiers, oscillators and mixers particularly in RF...
...Transistors RF Transistor NPN 15V 18mA 9GHz 150mW Surface Mount NPN 9 GHz wideband transistor FEATURES • Low current consumption • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability • SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for low power amplifiers, oscillators and mixers particularly in RF... more
Brand Name:NXP
Model Number:BFS505
Place of Origin:CHINA
-
High frequency rf fractional microneedle skin tightening machine/radiofrequency rf High frequency rf fractional microneedle skin tightening machine/radiofrequency rf Specification: Control System Microcomputer Operation Interface 8.4" Colorized Touch Screen Power Voltage 110/220V; 50/60Hz Needle Depth 0.5mm, 1mm, 1.5mm Treatment Area 62mm² Electrode No. 36 Pins Field width 0.62cm(at 1mmDepth) RF Bipolar 2MHz & 50W RF...
High frequency rf fractional microneedle skin tightening machine/radiofrequency rf High frequency rf fractional microneedle skin tightening machine/radiofrequency rf Specification: Control System Microcomputer Operation Interface 8.4" Colorized Touch Screen Power Voltage 110/220V; 50/60Hz Needle Depth 0.5mm, 1mm, 1.5mm Treatment Area 62mm² Electrode No. 36 Pins Field width 0.62cm(at 1mmDepth) RF Bipolar 2MHz & 50W RF... more
Brand Name:Nubway
Model Number:NBW-FR200
Place of Origin:Beijing, Shunyi China
-
... power supply can be used in the plating solution of different materials such as gold, silver, cadmium, copper, zinc, tin and alloy. Compared with traditional rectifiers, it has unique characteristics: small power supply, light weight, high efficiency and
... power supply can be used in the plating solution of different materials such as gold, silver, cadmium, copper, zinc, tin and alloy. Compared with traditional rectifiers, it has unique characteristics: small power supply, light weight, high efficiency and more
Brand Name:Xingtongli
Model Number:GKD15-200CVC
Place of Origin:China
-
...Power Transistor STWA65N60DM6 Mosfet N-channel 600 V, 0.084 Ohm typ., 30 A MDmesh DM6 Power TO-247 Feature • Extremely low RDS(on)*area and Qg and optimized capacitance profi le for light load conditions • Extremely high dv/dt • Optimized body diode recovery phase • Optimized softness APPLICATIONS • Charging stations for electric vehicles • LED lighting • Telecom • Servers • Solar inverters BENEFITS • Extremely high...
...Power Transistor STWA65N60DM6 Mosfet N-channel 600 V, 0.084 Ohm typ., 30 A MDmesh DM6 Power TO-247 Feature • Extremely low RDS(on)*area and Qg and optimized capacitance profi le for light load conditions • Extremely high dv/dt • Optimized body diode recovery phase • Optimized softness APPLICATIONS • Charging stations for electric vehicles • LED lighting • Telecom • Servers • Solar inverters BENEFITS • Extremely high... more
Brand Name:Original brand
Model Number:STWA65N60DM6
Place of Origin:Original
-
... requirements. Based on high speed IGBT technology, they provide high efficiency and performance. Supported three-phase voltage input, output voltage and current can be customized, Low Ripple,Our rectifiers adopt PWM ...
... requirements. Based on high speed IGBT technology, they provide high efficiency and performance. Supported three-phase voltage input, output voltage and current can be customized, Low Ripple,Our rectifiers adopt PWM ... more
Brand Name:IMAX POWER
Model Number:IDMA-400/200
Place of Origin:China
