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AO6601 30V N-Channel MOSFET Power Electronics Features: - 30V N-Channel MOSFET for improved power efficiency and high current switching - Low on-resistance for low power loss - Low gate charge for improved switching performance - Internal ESD protection...
AO6601 30V N-Channel MOSFET Power Electronics Features: - 30V N-Channel MOSFET for improved power efficiency and high current switching - Low on-resistance for low power loss - Low gate charge for improved switching performance - Internal ESD protection... more
Brand Name:Alpha & Omega Semiconductor Inc.
Model Number:AO6601
Place of Origin:Multi-origin
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Brand Name:Original
Model Number:HY3912W
Place of Origin:original
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Enhancement Mode N Channel Mosfet Power Transistor Low Voltage 100V N Channel Mosfet Power Working and Characteristics The construction of the power MOSFET is in V-configurations, as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power MOSFET...
Enhancement Mode N Channel Mosfet Power Transistor Low Voltage 100V N Channel Mosfet Power Working and Characteristics The construction of the power MOSFET is in V-configurations, as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power MOSFET... more
Brand Name:Hua Xuan Yang
Model Number:AP3N10BI
Place of Origin:ShenZhen China
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4A 500V 2.1Ω N-Channel Enhancement Mode Power MOSFET For Standby Power N-Channel Enhancement Mode Power MOSFET Part No.:CS4N50A Package:TO-220F/TO-252/TO-251 MAIN CHARACTERISTICS ID:4A VDSS:500V RDSON-typ VGS=10V: 2.1Ω ...
4A 500V 2.1Ω N-Channel Enhancement Mode Power MOSFET For Standby Power N-Channel Enhancement Mode Power MOSFET Part No.:CS4N50A Package:TO-220F/TO-252/TO-251 MAIN CHARACTERISTICS ID:4A VDSS:500V RDSON-typ VGS=10V: 2.1Ω ... more
Brand Name:Lingxun
Model Number:CS4N50A2
Place of Origin:China
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... The RA45H4045MR is a 45-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to 450-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V...
... The RA45H4045MR is a 45-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to 450-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V... more
Brand Name:Mitsubishi
Model Number:RA45H4045MR-101
Place of Origin:JP
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High Power MOSFET NVMS5P02 Single P-Channel Enhancement−Mode Power MOSFET -20V, -5.4A, 33mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for ...
High Power MOSFET NVMS5P02 Single P-Channel Enhancement−Mode Power MOSFET -20V, -5.4A, 33mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for ... more
Brand Name:ONSEMI
Model Number:NVMS5P02
Place of Origin:China
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Signal Power Mosfet Transistor P Channel Enhancement Mode BSP315 SIPMOS • P channel • Enhancement mode • Logic Level • VGS(th) = -0.8...-2.0 V Drain-source breakdown voltage V(BR)DSS = ƒ(Tj ) Transient thermal impedance ...
Signal Power Mosfet Transistor P Channel Enhancement Mode BSP315 SIPMOS • P channel • Enhancement mode • Logic Level • VGS(th) = -0.8...-2.0 V Drain-source breakdown voltage V(BR)DSS = ƒ(Tj ) Transient thermal impedance ... more
Model Number:BSP315
Place of Origin:China
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... QG × RDS(ON) product (FOM) and low RDS(ON). The low RDS(ON) ensures that the on-state losses are minimal. This MOSFET assures reliable and robust end application due to 100% unclamped inductive switching and test in production. DMT47M2SFVWQ MOSFET is
... QG × RDS(ON) product (FOM) and low RDS(ON). The low RDS(ON) ensures that the on-state losses are minimal. This MOSFET assures reliable and robust end application due to 100% unclamped inductive switching and test in production. DMT47M2SFVWQ MOSFET is more
Brand Name:Original Factory
Model Number:DMT47M2SFVWQ
Place of Origin:CN
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JY4N8M N Channel Enhancement Mode Power surface mount MOSFET for BLDC motor driver GENERAL DESCRIPTION: The JY4N8M utilizes the latest trench processing techniques to achieve the high cell density and ...
JY4N8M N Channel Enhancement Mode Power surface mount MOSFET for BLDC motor driver GENERAL DESCRIPTION: The JY4N8M utilizes the latest trench processing techniques to achieve the high cell density and ... more
Brand Name:JUYI
Model Number:JY4N8M
Place of Origin:China
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DMN26D0UFB4-7 Diodes MOSFET ENHANCE MODE MOSFET 20V N-Chan X2-DFN1006 DMN26D0UFB4-7B Manufacturer: Diodes Incorporated Product Category: MOSFET Technology: Si Installation style: SMD/SMT Package/Box: X2-DFN1006-3 Transistor polarity: N-Channel Number of ...
DMN26D0UFB4-7 Diodes MOSFET ENHANCE MODE MOSFET 20V N-Chan X2-DFN1006 DMN26D0UFB4-7B Manufacturer: Diodes Incorporated Product Category: MOSFET Technology: Si Installation style: SMD/SMT Package/Box: X2-DFN1006-3 Transistor polarity: N-Channel Number of ... more
Brand Name:Diodes
Model Number:DMN26D0UFB4-7
Place of Origin:UAS
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...ENHANCEMENT MODE MOSFET linear power mosfet trench power mosfet FEATURES • Low on-resistance • Fast switching speed • Low threshold • Low gate drive • SOT23-6 package APPLICATIONS • DC–DC Converters • Power Management functions • Disconnect switches • Motor control DESCRIPTION This new generation of Trench MOSFETs...
...ENHANCEMENT MODE MOSFET linear power mosfet trench power mosfet FEATURES • Low on-resistance • Fast switching speed • Low threshold • Low gate drive • SOT23-6 package APPLICATIONS • DC–DC Converters • Power Management functions • Disconnect switches • Motor control DESCRIPTION This new generation of Trench MOSFETs... more
Brand Name:DIODES
Model Number:ZXMP10A17E6TA
Place of Origin:Original
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... and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are ...
... and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are ... more
Brand Name:ON Semiconductor
Model Number:FQPF27P06
Place of Origin:Shenzhen, China
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...mosfets N channel transistor operates in enhancement mode Vishay's SIHF10N40D-E3 maximum power dissipation is 33000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. If you need to either amplify or switch between signals in your design, then Vishay's SIHF10N40D-E3 power MOSFET...
...mosfets N channel transistor operates in enhancement mode Vishay's SIHF10N40D-E3 maximum power dissipation is 33000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. If you need to either amplify or switch between signals in your design, then Vishay's SIHF10N40D-E3 power MOSFET... more
Brand Name:Vishay Semiconductor
Model Number:SIHF10N40D-E3
Place of Origin:CHINA
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INTEGRATED CIRCUIT CHIP AP4953GM --P-CHANNEL ENHANCEMENT MODE POWER MOSFET Quick Detail: P-CHANNEL ENHANCEMENT MODE POWER MOSFET Specifications: part no. AP4953GM Manufacturer APEC supply ability 3000 datecode 2007+ package SOP remark new...
INTEGRATED CIRCUIT CHIP AP4953GM --P-CHANNEL ENHANCEMENT MODE POWER MOSFET Quick Detail: P-CHANNEL ENHANCEMENT MODE POWER MOSFET Specifications: part no. AP4953GM Manufacturer APEC supply ability 3000 datecode 2007+ package SOP remark new... more
Brand Name:APEC
Model Number:AP4953GM
Place of Origin:Original Factory
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...similar to the general MOSFET. The power MOSFETS are very special to handle the high level of powers. It shows the high switching speed and by comparing with the normal MOSFET, the power MOSFET will work better. The power MOSFETs is widely used in the n
...similar to the general MOSFET. The power MOSFETS are very special to handle the high level of powers. It shows the high switching speed and by comparing with the normal MOSFET, the power MOSFET will work better. The power MOSFETs is widely used in the n more
Brand Name:Hua Xuan Yang
Model Number:G080NH03LA1C1
Place of Origin:ShenZhen China
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FS8205A Dual N-Channel Enhancement-Mode MOSFET (20V, 6A) 1.Description This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a wide range of gate drive voltage...
FS8205A Dual N-Channel Enhancement-Mode MOSFET (20V, 6A) 1.Description This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a wide range of gate drive voltage... more
Brand Name:FORTUNE
Model Number:FS8205A
Place of Origin:TAIWAN
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... and effectively minimizes on‐resistance through the utilization of cutting-edge trench processing techniques. Additionally, the device features low gate charge, further enhancing its performance.ents. Get more
... and effectively minimizes on‐resistance through the utilization of cutting-edge trench processing techniques. Additionally, the device features low gate charge, further enhancing its performance.ents. Get more more
Brand Name:JUYI
Model Number:JY4P7M
Place of Origin:China
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SOT-23 Plastic-Encapsulate MOSFETS BC3400 N-Channel Enhancement Mode Field Effect Transistor BC3400 SOT-23 Datasheet.pdf FEATURES High dense cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability Maximum ratings...
SOT-23 Plastic-Encapsulate MOSFETS BC3400 N-Channel Enhancement Mode Field Effect Transistor BC3400 SOT-23 Datasheet.pdf FEATURES High dense cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability Maximum ratings... more
Brand Name:Huixin
Model Number:BC3400
Place of Origin:China
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... Product Description: Silicon Carbide (SiC) MOSFET is a high-frequency, high-efficiency Metal Oxide Semiconductor Field Effect Transistor (MOSFET) based on Silicon Carbide material. This MOSFET has a wide working temperature range, low on-resistance, high-...
... Product Description: Silicon Carbide (SiC) MOSFET is a high-frequency, high-efficiency Metal Oxide Semiconductor Field Effect Transistor (MOSFET) based on Silicon Carbide material. This MOSFET has a wide working temperature range, low on-resistance, high-... more
Brand Name:REASUNOS
Place of Origin:Guangdong, CN
Minimum Order Quantity:600
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IXFK27N80Q N Channel Mosfet 800V 27A 0.32 Rds Power MOSFETs HiPerFET Description HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Features • IXYS advanced low Qg ...
IXFK27N80Q N Channel Mosfet 800V 27A 0.32 Rds Power MOSFETs HiPerFET Description HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Features • IXYS advanced low Qg ... more
Brand Name:IXYS
Model Number:IXFK27N80Q
Place of Origin:Original Factory
