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...MOSFETS Dual N-Channel MOSFET General Description VDSS= V ID= 6.0 A z 20 G1 6 D1,D2 5 G2 4 z RDS(on) < Ω@V = 4.5V 25m GS z RDS(on) < Ω@V = 2.5V 32m GS 1 2 3 S1 D1,D2 S2 FEATURE z TrenchFET Power MOSFET z Excellent RDS(on) z Low Gate Charge z High Power and Current Handing Capability z Surface Mount Package APPLICATION z Battery Protection z Load Switch z Power...
...MOSFETS Dual N-Channel MOSFET General Description VDSS= V ID= 6.0 A z 20 G1 6 D1,D2 5 G2 4 z RDS(on) < Ω@V = 4.5V 25m GS z RDS(on) < Ω@V = 2.5V 32m GS 1 2 3 S1 D1,D2 S2 FEATURE z TrenchFET Power MOSFET z Excellent RDS(on) z Low Gate Charge z High Power and Current Handing Capability z Surface Mount Package APPLICATION z Battery Protection z Load Switch z Power... more
Brand Name:Hua Xuan Yang
Model Number:8205A
Place of Origin:ShenZhen China
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...MOSFETS Dual N-Channel MOSFET General Description VDSS= V ID= 6.0 A z 20 G1 6 D1,D2 5 G2 4 z RDS(on) < Ω@V = 4.5V 25m GS z RDS(on) < Ω@V = 2.5V 32m GS 1 2 3 S1 D1,D2 S2 FEATURE z TrenchFET Power MOSFET z Excellent RDS(on) z Low Gate Charge z High Power and Current Handing Capability z Surface Mount Package APPLICATION z Battery Protection z Load Switch z Power...
...MOSFETS Dual N-Channel MOSFET General Description VDSS= V ID= 6.0 A z 20 G1 6 D1,D2 5 G2 4 z RDS(on) < Ω@V = 4.5V 25m GS z RDS(on) < Ω@V = 2.5V 32m GS 1 2 3 S1 D1,D2 S2 FEATURE z TrenchFET Power MOSFET z Excellent RDS(on) z Low Gate Charge z High Power and Current Handing Capability z Surface Mount Package APPLICATION z Battery Protection z Load Switch z Power... more
Brand Name:OTOMO
Model Number:8205A
Place of Origin:ShenZhen China
RoHS Dual N Channel Mosfet Power Transistor SOT-23-6L MOSFETS 6.0 A VDSS
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SI2305CDS-T1-GE3 N-Channel MOSFET Power Transistor for High-Speed Switching Applications Product Features: • N-Channel MOSFET • 30V drain-source voltage • 0.005Ω maximum on-state resistance • 1.5A (Tc) continuous drain current • Surface mount package • ...
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IRF3205PBF N-Channel MOSFET 55V 110A 200W Through Hole TO-220AB Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined...
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CSD87312Q3E Mosfet Power Transistor MOSFET Dual 30V N-CH NexFET Pwr MOSFETs FEATURES CommonSourceConn ection Ultr a L o w Drain to Drain On-Resistance Space Saving SON 3.3 x 3.3mm Plastic Package Optimized for 5V ...
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Product Detail Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 49A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 17.5 ...
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...MOSFET POWER TRANSISTOR IRFB38N20DPBF N- CHANNEL SMPS MOSFET FET Type: N-Channel Drain To Source Voltage: 200V Current - Continuous Drain: 43A Drive Voltage: 10V High Light: high power mosfet transistors , n channel mosfet transistor IRFB38N20DPBF N-Channel 200V 43A 3.8W 300W Through Hole TO-220AB SMPS MOSFET...
...MOSFET POWER TRANSISTOR IRFB38N20DPBF N- CHANNEL SMPS MOSFET FET Type: N-Channel Drain To Source Voltage: 200V Current - Continuous Drain: 43A Drive Voltage: 10V High Light: high power mosfet transistors , n channel mosfet transistor IRFB38N20DPBF N-Channel 200V 43A 3.8W 300W Through Hole TO-220AB SMPS MOSFET... more
Brand Name:Original brand
Model Number:IRFB38N20DPBF
Place of Origin:Original Manufacturer
43A 200v Mosfet Power Transistor SMPS n channel IRFB38N20DPBF 3.8W 300W
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Mosfet Power Transistor NTMFS5H419NLT1G MOSFET T8 40V Low Coss SMD/SMT Feature • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free and are RoHS Compliant Categories MOSFET T8 40V LOW COSS NTMFS5H419NLT1G Transistor Polarity N-Channel Channel No. 1 Channel...
Mosfet Power Transistor NTMFS5H419NLT1G MOSFET T8 40V Low Coss SMD/SMT Feature • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free and are RoHS Compliant Categories MOSFET T8 40V LOW COSS NTMFS5H419NLT1G Transistor Polarity N-Channel Channel No. 1 Channel... more
Brand Name:Original brand
Model Number:NTMFS5H419NLT1G
Place of Origin:Original
T8 40V SMD / SMT Mosfet Power Transistor Low Coss 155A Continuous Leakage Current
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...Channel 100V 40A 200W TO-220 DIP Mosfet Power Transistor Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs...
...Channel 100V 40A 200W TO-220 DIP Mosfet Power Transistor Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs... more
Brand Name:Infineon
Model Number:IRF5210PBF
Place of Origin:Original Factory
P Channel DIP Mosfet Power Transistor 100V 40A 200W TO-220 IRF5210PBF Lead Free
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...Power MOSFET FDPC5018SG 30V Asymmetric Dual N-Channel PowerTrench® Power Clip MOSFET [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 years, specialize in selling the new and unused, original factory sealed packing electronic components. specialize in IC,MCU,Memory,Module,diode,transistor...
...Power MOSFET FDPC5018SG 30V Asymmetric Dual N-Channel PowerTrench® Power Clip MOSFET [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 years, specialize in selling the new and unused, original factory sealed packing electronic components. specialize in IC,MCU,Memory,Module,diode,transistor... more
Brand Name:ONSEMI
Model Number:FDPC5018SG
Place of Origin:China
High Power MOSFET FDPC5018SG 30V Asymmetric Dual N-Channel PowerTrench® Power Clip MOSFET
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...100% avalanche tested • Improved dv/dt capability • TO-220F package isolation = 4.0kV (Note 6) General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.
...100% avalanche tested • Improved dv/dt capability • TO-220F package isolation = 4.0kV (Note 6) General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. more
Brand Name:FAIRCHILD
Model Number:SSS7N60B
Place of Origin:Original
SSS7N60B 600V N-Channel MOSFET power mosfet ic Field Effect Transistor
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Mosfet Power Transistor IXFH160N15T2 160A 150V 880W N-Channel TrenchT2 Description DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power...
Mosfet Power Transistor IXFH160N15T2 160A 150V 880W N-Channel TrenchT2 Description DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power... more
Brand Name:IXYS
Model Number:IXFH160N15T2
Place of Origin:Original Factory
IXFH160N15T2 Mosfet Power Transistor 160A 150V 880W N Channel TrenchT2
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...Channel Mosfet Array Transistors Product Description Of MSCSM120HM31CTBL2NG MSCSM120HM31CTBL2NG device is a full bridge 1200 V/79 A silicon carbide (SiC) MOSFET power module. Specification Of MSCSM120HM31CTBL2NG Part Number MSCSM120HM31CTBL2NG Input Capacitance (Ciss) (Max) @ Vds 3020pF @ 1000V Power...
...Channel Mosfet Array Transistors Product Description Of MSCSM120HM31CTBL2NG MSCSM120HM31CTBL2NG device is a full bridge 1200 V/79 A silicon carbide (SiC) MOSFET power module. Specification Of MSCSM120HM31CTBL2NG Part Number MSCSM120HM31CTBL2NG Input Capacitance (Ciss) (Max) @ Vds 3020pF @ 1000V Power... more
Brand Name:Original Factory
Model Number:MSCSM120HM31CTBL2NG
Place of Origin:CN
MSCSM120HM31CTBL2NG Automotive IGBT Modules N-Channel Mosfet Array Transistors
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D2003UK N/A Electronic Components IC MCU Microcontroller Integrated Circuits D2003UK #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border-bottom-width:...
D2003UK N/A Electronic Components IC MCU Microcontroller Integrated Circuits D2003UK #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border-bottom-width:... more
Brand Name:KAIGENG
Model Number:D2003UK
Place of Origin:Malaysia
D2003UK Dual N Channel MOSFET Transistor 1A 65V 5 Pin Logic Ics
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...MOSFET 2N/2P-CH 100V/80V 12-MLP Original Mosfet Transistor Products Description: 1. FDMQ8203 dual-channel FET, MOSFET, N and P channels, 6 A, 100 V, 0.085 OHM, 10 V, 3 V 2. His Quad MOSFET Solution provides for a promise that provides a ten-fold improvement in the Power Dissipation over Diode Bridge. 3.High-Efficiency Bridge Rectifiers Technological Parameters: Polarity N - Channel dissipated power...
...MOSFET 2N/2P-CH 100V/80V 12-MLP Original Mosfet Transistor Products Description: 1. FDMQ8203 dual-channel FET, MOSFET, N and P channels, 6 A, 100 V, 0.085 OHM, 10 V, 3 V 2. His Quad MOSFET Solution provides for a promise that provides a ten-fold improvement in the Power Dissipation over Diode Bridge. 3.High-Efficiency Bridge Rectifiers Technological Parameters: Polarity N - Channel dissipated power... more
Brand Name:ON
Model Number:FDMQ8203
Place of Origin:America
Dual Channel Mosfet Transistor IC Chip 100V 80V 12-MLP FDMQ8203
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DMN5L06DWK7 MOSFET Dual N Channel 2 Channel Small Signal kdk smd transistors surface mode transistors Features Dual N-Channel MOSFET Low On-Resistance (1.0V Max) Very Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low ...
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...Transistors N-Channel MOSFET Plastic-Encapsulate MOSFETS DESCRIPTION The CJ2310 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltage as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. FEATURE High power...
...Transistors N-Channel MOSFET Plastic-Encapsulate MOSFETS DESCRIPTION The CJ2310 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltage as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. FEATURE High power... more
Brand Name:CJ
Model Number:CJ2310 S10
Place of Origin:CHINA
CJ2310 S10 Plastic Encapsulate Dual Gate Mosfet , High Power N Channel Mosfet
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D2085UK 28V120W 1MHz-1000MHz push-pull RF POWER TRANSISTOR MOSFET Manufacturer: TT Electronics Product Category: TT Electronics Brand: Semelab / TT Electronics The D2085UK is a push-pull RF power transistor MOSFET that operates at a voltage of 28V and can ...
D2085UK 28V120W 1MHz-1000MHz push-pull RF POWER TRANSISTOR MOSFET Manufacturer: TT Electronics Product Category: TT Electronics Brand: Semelab / TT Electronics The D2085UK is a push-pull RF power transistor MOSFET that operates at a voltage of 28V and can ... more
Brand Name:Semelab / TT Electronics
Model Number:D2085UK
Place of Origin:UK
D2085UK 28V120W 1MHz-1000MHz Push-pull RF Power Transistor MOSFET
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... MOSFET Transistor Revolutionize Your Electronic Circuits with IRF3205 MOSFET Transistor IRF3205 is a powerful and reliable N-channel MOSFET transistor that is commonly used in electronic circuits where high power switching is required. This MOSFET has ...
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... MOSFET MOSFT 75V 170A 4.1mOhm 120nC App Characteristics Features High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits Benefits Improved Gate, Avalanche and
... MOSFET MOSFT 75V 170A 4.1mOhm 120nC App Characteristics Features High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits Benefits Improved Gate, Avalanche and more
Brand Name:Infineon Technologies IR
Model Number:IRFS3207ZTRRPBF
Minimum Order Quantity:Negotiable
N Channel Field Effect Transistor Mosfet Discrete Semiconductors IRFS3207ZTRRPBF