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...Power Module HOT SALE In Stock Manufacturer: Microchip Product Category: IGBT Modules Brand: Microchip / Microsemi Product Type: IGBT Modules Subcategory: IGBTs Technology: Si About Wisdtech Shenzhen Wisdtech Technology Co., Ltd are a large-scale supplier specializing in famous semiconductor...
...Power Module HOT SALE In Stock Manufacturer: Microchip Product Category: IGBT Modules Brand: Microchip / Microsemi Product Type: IGBT Modules Subcategory: IGBTs Technology: Si About Wisdtech Shenzhen Wisdtech Technology Co., Ltd are a large-scale supplier specializing in famous semiconductor... more
Description:CMPWGT300V60G Power Module HOT SALE In Stock
Stock:1000pcs
Minimum Order Quantity:1pcs
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... C Configuration 6-Pack Transistor Polarity N and P-Channel Id - Continuous Drain Current 3.1 mA Operating Supply Voltage 300 V Subcategory Discrete Semiconductor Modules < DIPIPM >
... C Configuration 6-Pack Transistor Polarity N and P-Channel Id - Continuous Drain Current 3.1 mA Operating Supply Voltage 300 V Subcategory Discrete Semiconductor Modules < DIPIPM > more
Model Number:SLIMDIP-S
Minimum Order Quantity:1 pcs
Price:Bargain
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...Modules FP25R12KT4B11BPSA1 Discrete Semiconductor IGBT Modules Product Description Of FP25R12KT4B11BPSA1 FP25R12KT4B11BPSA1 is EconoPIM™2 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diodeund PressFIT/NTC. Specification Of FP25R12KT4B11BPSA1 Part Number: FP25R12KT4B11BPSA1 Rated Resistance: 5 KΩ Deviation Of R100: -5-5 % Power Dissipation: 20 MW B-Value: 3375 K Symbol Size: 16x16 Features Of Automotive IGBT Modules
...Modules FP25R12KT4B11BPSA1 Discrete Semiconductor IGBT Modules Product Description Of FP25R12KT4B11BPSA1 FP25R12KT4B11BPSA1 is EconoPIM™2 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diodeund PressFIT/NTC. Specification Of FP25R12KT4B11BPSA1 Part Number: FP25R12KT4B11BPSA1 Rated Resistance: 5 KΩ Deviation Of R100: -5-5 % Power Dissipation: 20 MW B-Value: 3375 K Symbol Size: 16x16 Features Of Automotive IGBT Modules more
Brand Name:Original Factory
Model Number:FP25R12KT4B11BPSA1
Place of Origin:CN
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Product Description: Ceramics Substrate - AIN Ceramic Substrate The Ceramics Substrate is a high performance electronic material designed for use in semiconductor power modules. Made from high thermal conductivity Aluminum Nitride (AIN) ceramic, this ...
Product Description: Ceramics Substrate - AIN Ceramic Substrate The Ceramics Substrate is a high performance electronic material designed for use in semiconductor power modules. Made from high thermal conductivity Aluminum Nitride (AIN) ceramic, this ... more
Brand Name:wuxi special ceramic
Place of Origin:China
Minimum Order Quantity:10p
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#detail_decorate_root .magic-0{vertical-align:top}#detail_decorate_root .magic-1{vertical-align:top;display:block;padding-right:4px;box-sizing:border-box;padding-left:4px}#detail_decorate_root .magic-2{vertical-align:top;padding-bottom:4px;box-sizing:... more
Brand Name:Original Brand
Model Number:MR4011
Place of Origin:Guangdong, China
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Discrete Semiconductors APT30M85BVRG TO-247-3 MOSFET Product Description: Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power...
Discrete Semiconductors APT30M85BVRG TO-247-3 MOSFET Product Description: Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power... more
Brand Name:Microchip
Model Number:APT30M85BVRG
Place of Origin:USA
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...Power Semiconductors - 2018 Catalog This catalog provides an overview of Infineon's power semiconductor offerings for industrial and consumer applications, as detailed in the 2018 edition. It covers a wide range of technologies including IGBT modules, discrete IGBTs and diodes, Silicon Carbide (SiC) devices, Intelligent Power Modules (IPMs), Gate Driver ICs, Thyristor/diode discs and modules...
...Power Semiconductors - 2018 Catalog This catalog provides an overview of Infineon's power semiconductor offerings for industrial and consumer applications, as detailed in the 2018 edition. It covers a wide range of technologies including IGBT modules, discrete IGBTs and diodes, Silicon Carbide (SiC) devices, Intelligent Power Modules (IPMs), Gate Driver ICs, Thyristor/diode discs and modules... more
Model Number:C3100N65X122
Holding Current (Ih):-
Current - Gate Trigger(Igt):-
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... Technical Specifications N Channel Transistor Discrete Semiconductors SIHF10N40D-E3 Power Mosfets EU RoHS Compliant ECCN (US) EAR99 Part Status Active HTS 8541.29.00.95 Automotive No PPAP No Product Category Power MOSFET Configuration Single Channel ...
... Technical Specifications N Channel Transistor Discrete Semiconductors SIHF10N40D-E3 Power Mosfets EU RoHS Compliant ECCN (US) EAR99 Part Status Active HTS 8541.29.00.95 Automotive No PPAP No Product Category Power MOSFET Configuration Single Channel ... more
Brand Name:Vishay Semiconductor
Model Number:SIHF10N40D-E3
Minimum Order Quantity:1 piece
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... (Ic) (Max) 80 A Current - Collector Pulsed (Icm) 300 A Vce(on) (Max) @ Vge, Ic 1.35V @ 15V, 75A Power - Max 469 W Switching Energy 1.01mJ (on)
... (Ic) (Max) 80 A Current - Collector Pulsed (Icm) 300 A Vce(on) (Max) @ Vge, Ic 1.35V @ 15V, 75A Power - Max 469 W Switching Energy 1.01mJ (on) more
Brand Name:onsemi
Model Number:FGHL75T65LQDTL4
Minimum Order Quantity:50pcs
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Electronic Components RB168MM150TFTR In Stock Find information here in stock.xlsx Product Attributes TYPE DESCRIPTION Category Discrete Semiconductor Products Diodes Rectifiers Single Diodes Mfr Rohm Semiconductor Series Automotive, AEC-Q101 Package Tape...
Electronic Components RB168MM150TFTR In Stock Find information here in stock.xlsx Product Attributes TYPE DESCRIPTION Category Discrete Semiconductor Products Diodes Rectifiers Single Diodes Mfr Rohm Semiconductor Series Automotive, AEC-Q101 Package Tape... more
Model Number:RB168MM150TFTR
Place of Origin:China
Certification:CE
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... 50V Max Vce (sat) 400mV @ 5mA, 50mA Typical Gain (hFE) (Min) 120 @ 1mA, 6V Maximum Power Dissipation 150mW Frequency - Transition 180MHz Temperature Range - Operating 150℃
... 50V Max Vce (sat) 400mV @ 5mA, 50mA Typical Gain (hFE) (Min) 120 @ 1mA, 6V Maximum Power Dissipation 150mW Frequency - Transition 180MHz Temperature Range - Operating 150℃ more
Brand Name:ROHM
Model Number:2SC5658T2LR
Place of Origin:GER
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BTA08-600CRG Discrete Semiconductor Products Integrated circuit IC Chips PRODUCT DESCRIPTION Part number # BTA08-600CRG is manufactured by ST Technologies and distributed by Jalixin. As one of the leading distributors of electronic products, we carry many ...
BTA08-600CRG Discrete Semiconductor Products Integrated circuit IC Chips PRODUCT DESCRIPTION Part number # BTA08-600CRG is manufactured by ST Technologies and distributed by Jalixin. As one of the leading distributors of electronic products, we carry many ... more
Brand Name:Original
Model Number:BTA08-600CRG
Place of Origin:Original
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TGF2023-2-10 TriQuint Semiconduct 20211200A/N Discrete Semiconductor Devices PRODUCT DESCRIPTION Part number TGF2023-2-10 is manufactured by TriQuint Semiconduct and distributed by Stjk. As one of the leading distributors of electronic products, we ...
TGF2023-2-10 TriQuint Semiconduct 20211200A/N Discrete Semiconductor Devices PRODUCT DESCRIPTION Part number TGF2023-2-10 is manufactured by TriQuint Semiconduct and distributed by Stjk. As one of the leading distributors of electronic products, we ... more
Brand Name:TriQuint Semiconduct
Model Number:TGF2023-2-10
Place of Origin:China
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AO3424 MOSFET Power Electronics Discrete Semiconductor N-Channel 30V 3.8A 1.4W Surface Mount Package SOT-23-3 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 3.8A (Ta) Drive ...
AO3424 MOSFET Power Electronics Discrete Semiconductor N-Channel 30V 3.8A 1.4W Surface Mount Package SOT-23-3 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 3.8A (Ta) Drive ... more
Brand Name:AOS
Model Number:AO3424
Place of Origin:original
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...Discrete I/O Module FBM241C.pdf Description: The Foxboro FBM241C is a high-performance discrete I/O module engineered for robust digital interfacing in industrial control systems. It supports 15 to 60 VDC contact inputs available in unprotected (no fuse) or protected (fused) configurations. The module also accommodates externally powered...
...Discrete I/O Module FBM241C.pdf Description: The Foxboro FBM241C is a high-performance discrete I/O module engineered for robust digital interfacing in industrial control systems. It supports 15 to 60 VDC contact inputs available in unprotected (no fuse) or protected (fused) configurations. The module also accommodates externally powered... more
Brand Name:Foxboro
Model Number:FBM241C
Place of Origin:USA
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Power Driver Module MOSFET 3 Phase 500 V 2 A 23-PowerDIP Module (0.644", 16.35mm)
Power Driver Module MOSFET 3 Phase 500 V 2 A 23-PowerDIP Module (0.644", 16.35mm) more
Description:FET 3PH 500V 2A MODULE
Category:Discrete Semiconductor ProductsPower Driver Modules
Type:MOSFET
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...Discrete Input Module Number of Discrete Inputs 32 MTBF Reliability 905,000 H Power Consumption 3.9 W Discrete Input Current 2.5 mA 2. Key Selling Points High-Performance Discrete Input Module for Modicon M340:The BMXDDI3202K is a 32-channel digital input module...
...Discrete Input Module Number of Discrete Inputs 32 MTBF Reliability 905,000 H Power Consumption 3.9 W Discrete Input Current 2.5 mA 2. Key Selling Points High-Performance Discrete Input Module for Modicon M340:The BMXDDI3202K is a 32-channel digital input module... more
Brand Name:Schneider
Model Number:BMXDDI3202K
Minimum Order Quantity:1
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... Module Description: Fairchild’s Insulated Gate Bipolar Transistor (IGBT) power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power ...
... Module Description: Fairchild’s Insulated Gate Bipolar Transistor (IGBT) power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power ... more
Brand Name:Fairchild Semiconductor
Model Number:FMG2G100US60
Place of Origin:PHILIPPINE
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...DISCRETE OUTPUT INTERFACE MODULE The Compact FBM242 Discrete Output Interface Module contains 16 discrete output channels which are powered from a customer-selected external power supply of your choosing. Key features of the Compact FBM242 modules are: Sixteen discrete outputs Supports discrete...
...DISCRETE OUTPUT INTERFACE MODULE The Compact FBM242 Discrete Output Interface Module contains 16 discrete output channels which are powered from a customer-selected external power supply of your choosing. Key features of the Compact FBM242 modules are: Sixteen discrete outputs Supports discrete... more
Brand Name:FOXBORO
Model Number:FBM242 P0916TA
Place of Origin:USA
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... Trench/Feld stopp IGBT 4und Emitter Controlled Diode 1 TechnischeInformation/TechnicalInformation FF300R17KE4 IGBT-Module IGBT-modules Insulated-gate bipolar transistors (IGBTs) are three-terminal power semiconductor devices primarily used as
... Trench/Feld stopp IGBT 4und Emitter Controlled Diode 1 TechnischeInformation/TechnicalInformation FF300R17KE4 IGBT-Module IGBT-modules Insulated-gate bipolar transistors (IGBTs) are three-terminal power semiconductor devices primarily used as more
Brand Name:INFINEON
Model Number:FF300R17KE4
Place of Origin:Original
