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... of 1.3 mΩ, a maximum drain source voltage of 100V, and a maximum drain current of 29A. It also offers a high breakdown voltage of 500V and a maximum junction temperature of 175°C. In addition, it operates at a maximum frequency of 4MHz, making it
... of 1.3 mΩ, a maximum drain source voltage of 100V, and a maximum drain current of 29A. It also offers a high breakdown voltage of 500V and a maximum junction temperature of 175°C. In addition, it operates at a maximum frequency of 4MHz, making it more
Brand Name:Vishay Siliconix
Model Number:IRFP460PBF
Place of Origin:original
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SPA04N80C3XKSA1 Power MOSFET 800V Ultra-High Voltage 4A Current Low Rds(on) Super Junction Technology Low Gate Charge High Efficiency Halogen-Free Robust Performance for SMPS andamp; Industrial Drives andnbsp; ...
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SSS7N60B 600V N-Channel MOSFET power mosfet ic Field Effect Transistor Features • 7.0A, 600V, RDS(on) = 1.2Ω @VGS = 10 V • Low gate charge ( typical 38 nC) • Low Crss ( typical 23 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • ...
SSS7N60B 600V N-Channel MOSFET power mosfet ic Field Effect Transistor Features • 7.0A, 600V, RDS(on) = 1.2Ω @VGS = 10 V • Low gate charge ( typical 38 nC) • Low Crss ( typical 23 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • ... more
Brand Name:FAIRCHILD
Model Number:SSS7N60B
Place of Origin:Original
SSS7N60B 600V N-Channel MOSFET power mosfet ic Field Effect Transistor
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...600V Super Fast Recovery Rectifier Diode in Surface Mount SMD Package ES2J ES2A THRU ES2J SURFACE MOUNT SUPER FAST RECTIFIERS Reverse Voltage - 50 to 600 Volts Forward Current - 2.0 Ampere Product Dimension Product Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 For surface mounted applications Super...
...600V Super Fast Recovery Rectifier Diode in Surface Mount SMD Package ES2J ES2A THRU ES2J SURFACE MOUNT SUPER FAST RECTIFIERS Reverse Voltage - 50 to 600 Volts Forward Current - 2.0 Ampere Product Dimension Product Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 For surface mounted applications Super... more
Brand Name:trusTec
Model Number:ES2J
Place of Origin:China
2A 600V Super Fast Recovery Rectifiers Diode SMD Package ES2J ES2G ES2A
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TK8A60DA Trans MOSFET N-CH 600V 7.5A 3-Pin(3+Tab) TO-220SIS - Rail/Tube Technical Attributes : Description Value Channel Mode Enhancement Channel Type N ...
TK8A60DA Trans MOSFET N-CH 600V 7.5A 3-Pin(3+Tab) TO-220SIS - Rail/Tube Technical Attributes : Description Value Channel Mode Enhancement Channel Type N ... more
Brand Name:To shi ba
Model Number:TK8A60DA(STA4,Q,M)
Place of Origin:Shenzhen, China
3 Pin TK8A60DA N-CH 600V 7.5A Mosfet Power Transistor
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Automotive IGBT Modules VS-ENY050C60 600V Full Bridge MOSFET Diode Power Modules [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery ...
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8A 600V Super Fast Recovery Rectifiers DIP 2Pin TO - 220AC 8A 600V Super Fast Recovery Rectifier Diode DIP 2 Pin TO-220AC Low Reverse Leakage MUR805~MUR8100 TO-220AC Datasheet.pdf Features: The plastic package carries Underwriters Laboratory Flammability...
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... of high voltage Super Junction MOSFET with FRD 600V 70A 41mΩ Si Super junction MOSFET with Fast Recovery Diode Applications: Solar inverters • LCD/LED/PDP TV • Telecom/Server Power supplies • AC-...
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We can supply STF10N60M2, send us a request quote to request STF10N60M2pirce and lead time, https://www.henkochips.com a professional electronic components distributor. With 10+ Million line items of available electronic components can ship in short lead-...
We can supply STF10N60M2, send us a request quote to request STF10N60M2pirce and lead time, https://www.henkochips.com a professional electronic components distributor. With 10+ Million line items of available electronic components can ship in short lead-... more
Model Number:STF10N60M2
Payment Terms:D/A, T/T, Western Union
Delivery Time:1-2 work days
STF10N60M2 Discrete Semiconductor , 600V TO-220FP MOSFET N-CH
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...MOSFET is produced using Maple semi‘s Advanced Super-Junction technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for AC/DC power conversion Features 47A, 600V...
...MOSFET is produced using Maple semi‘s Advanced Super-Junction technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for AC/DC power conversion Features 47A, 600V... more
Brand Name:Maplesemi
Model Number:SLH60R080SS
Place of Origin:Original
SLH60R080SS MOSFET 600V47A N-Channne TO-247 FET New Original 68mΩ 290W
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... Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 21A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (...
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MOSFETs Silicon N-Channel MOS (DTMOS) TK10P60W Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.327 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) ...
MOSFETs Silicon N-Channel MOS (DTMOS) TK10P60W Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.327 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) ... more
Model Number:TK10P60W
Place of Origin:original factory
TK10P60W Power Mosfet Transistor MOSFETs Silicon N-Channel MOS
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...Mosfet Power Transistor 2A 600V Circuit Switching For LED Drive Mosfet Power Transistor Description The AP50N20D uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other Mosfet Power Transistor General Features V DS =200V,I D =5A R DS(ON) <520mΩ @ V GS =4.5V Mosfet...
...Mosfet Power Transistor 2A 600V Circuit Switching For LED Drive Mosfet Power Transistor Description The AP50N20D uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other Mosfet Power Transistor General Features V DS =200V,I D =5A R DS(ON) <520mΩ @ V GS =4.5V Mosfet... more
Brand Name:Hua Xuan Yang
Model Number:5N20DY TO-252
Place of Origin:ShenZhen China
N Channel Mosfet Power Transistor 2A 600V Circuit Switching For LED Drive
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...MOSFET POWER TRANSISTOR SIHB22N60E - E3 600V 21A PACKAGE D2PAK FET Type: N-channel Operating Temperature: -55°C ~ 150°C (TJ) Package: TO263-3 D2PAK High Light: n channel mosfet transistor , n channel transistor High Voltage Single Mosfet Power Transistor SIHB22N60E - E3 600V 21A Package D2PAK MSL 1 SINGLE N-CHANNEL MOSFETS...
...MOSFET POWER TRANSISTOR SIHB22N60E - E3 600V 21A PACKAGE D2PAK FET Type: N-channel Operating Temperature: -55°C ~ 150°C (TJ) Package: TO263-3 D2PAK High Light: n channel mosfet transistor , n channel transistor High Voltage Single Mosfet Power Transistor SIHB22N60E - E3 600V 21A Package D2PAK MSL 1 SINGLE N-CHANNEL MOSFETS... more
Brand Name:original
Model Number:SIHB22N60E-E3
Place of Origin:Original Manufacturer
Single High Voltage Mosfet Power Transistor DC SIHB22N60E-E3 ROHS
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Infineon MOSFET N-Ch 650V 20.7A TO247-3 CoolMOS C3,600V CoolMOS™ C3 is Infineon's third series of CoolMOS™ Replacement for 600V CoolMOS™ C3 is CoolMOS™ P7 600V CoolMOS™ C3 is Infineon's third series of CoolMOS™ with market entry in 2001. C3 is the "working...
Infineon MOSFET N-Ch 650V 20.7A TO247-3 CoolMOS C3,600V CoolMOS™ C3 is Infineon's third series of CoolMOS™ Replacement for 600V CoolMOS™ C3 is CoolMOS™ P7 600V CoolMOS™ C3 is Infineon's third series of CoolMOS™ with market entry in 2001. C3 is the "working... more
Brand Name:Infineon Technologies
Model Number:SPW20N60C3
Place of Origin:China
Low Gate Charge Igbt Mosfet High Power N Channel Power Mosfet 600V TO247-3
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Box Material: ABS Box dimension : 100*100*75mm Cover: ABS plastic Cover or PC plastic clear cover Cable Connectors: PG-7 x 3 pieces Terminal blocks: TB4503 45Amp, 600V, 3 Poles or UK2.5B din rail terminal blocks, 32A, 600V Pakcage :all the accessories wil...
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Box Material: ABS Box dimension : 100*100*75mm Cover: ABS plastic Cover or PC plastic clear cover Cable Connectors: PG-7 x 3 pieces Terminal blocks: TB4503 45Amp, 600V, 3 Poles or UK2.5B din rail terminal blocks, 32A, 600V Pakcage :all the accessories wil...
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Box Material: ABS Box dimension : 100*100*75mm Cover: ABS plastic Cover or PC plastic clear cover Cable Connectors: PG-7 x 3 pieces Terminal blocks: TB4503 45Amp, 600V, 3 Poles or UK2.5B din rail terminal blocks, 32A, 600V Pakcage :all the accessories wil...
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Box Material: ABS Box dimension : 100*100*75mm Cover: ABS plastic Cover or PC plastic clear cover Cable Connectors: PG-7 x 3 pieces Terminal blocks: TB4503 45Amp, 600V, 3 Poles or UK2.5B din rail terminal blocks, 32A, 600V Pakcage :all the accessories wil...