-
...InP substrate bandwidth 02:2.5G wavelength 1270nm epi wafer for FP laser diode N-InP substrate FP Epiwafer's Overview Our N-InP Substrate FP Epiwafer is a high-performance epitaxial wafer designed for the fabrication of Fabry-Pérot (FP) laser diodes, specifically optimized for optical communication applications. This Epiwafer features an N-type Indium Phosphide (N-InP) substrate...
...InP substrate bandwidth 02:2.5G wavelength 1270nm epi wafer for FP laser diode N-InP substrate FP Epiwafer's Overview Our N-InP Substrate FP Epiwafer is a high-performance epitaxial wafer designed for the fabrication of Fabry-Pérot (FP) laser diodes, specifically optimized for optical communication applications. This Epiwafer features an N-type Indium Phosphide (N-InP) substrate... more
Brand Name:ZMSH
Place of Origin:China
Payment Terms:T/T
-
InP FP epiwafer InP substrate n/p type 2 3 4 inch with thickeness of 350-650um for optical net work InP epiwafer's Overview Indium Phosphide (InP) Epiwafer is a key material used in advanced optoelectronic devices, particularly Fabry-Perot (FP) laser diodes. InP Epiwafers consist of epitaxially grown layers on an InP substrate, designed for high-performance applications in telecommunications, data centers, and sensing technologies. InP...
InP FP epiwafer InP substrate n/p type 2 3 4 inch with thickeness of 350-650um for optical net work InP epiwafer's Overview Indium Phosphide (InP) Epiwafer is a key material used in advanced optoelectronic devices, particularly Fabry-Perot (FP) laser diodes. InP Epiwafers consist of epitaxially grown layers on an InP substrate, designed for high-performance applications in telecommunications, data centers, and sensing technologies. InP... more
Brand Name:ZMSH
Place of Origin:China
Certification:ROHS
InP FP Epiwafer InP Substrate N/p Type 2 3 4 Inch With Thickeness Of 350-650um For Optical Net Work
-
...InP Substrate With Low Etch Pit Density(EPD) , 3”, Prime Grade PAM-XIAMEN provides single crystal InP(Indium phosphide) wafer for micro-electronic ( HBT/ HEMT ) and opto-electronic industry ( LED / DWDM / PIN / VCSELs ) in diameter up to 6 inch. Indium phosphide ( InP ) crystal is formed by two elements , Indium and Phosphide , growth by Liquid Encapsulated Czochralski ( LEC ) method or VGF method . InP...
...InP Substrate With Low Etch Pit Density(EPD) , 3”, Prime Grade PAM-XIAMEN provides single crystal InP(Indium phosphide) wafer for micro-electronic ( HBT/ HEMT ) and opto-electronic industry ( LED / DWDM / PIN / VCSELs ) in diameter up to 6 inch. Indium phosphide ( InP ) crystal is formed by two elements , Indium and Phosphide , growth by Liquid Encapsulated Czochralski ( LEC ) method or VGF method . InP... more
Brand Name:PAM-XIAMEN
Place of Origin:China
Minimum Order Quantity:1-10,000pcs
P Type , InP Substrate With Low Etch Pit Density(EPD) , 3”, Prime Grade
-
InP Based Epi Wafer We provides MBE / MOCVD epitaxial growth of custom structure on InP substrate for microelectronics , optoelectronics and RF Microwave applications , in diameter Ø 2" to Ø 4” . With our extensive MOCVD experience , we can grow binary alloy ( InP ) or ternary alloy ( InGaAs , InAlAs , InGaAsP ) on InP substrate...
InP Based Epi Wafer We provides MBE / MOCVD epitaxial growth of custom structure on InP substrate for microelectronics , optoelectronics and RF Microwave applications , in diameter Ø 2" to Ø 4” . With our extensive MOCVD experience , we can grow binary alloy ( InP ) or ternary alloy ( InGaAs , InAlAs , InGaAsP ) on InP substrate... more
Brand Name:ZG
Model Number:MS
Place of Origin:CHINA
Dia 3 Inch 4 Inch Technical Ceramic Parts InP Based Epi Wafer
-
CWDM DFB TOSA Pigtail Receptacle FC SC APC UPC Analog Laser 1.25G 2.5G 1270nm to 1610nm CATV Description The TOSA-Cxxxx-DFB-2.5G-SCAPC-A Series are 1270nm~1610nm InGaAsP/InP CWDM MQW-DFB laser diode modules designed for communication systems. These modules...
-
PLC planar waveguide type optical fiber splitter (PLC Splitter) is a kind of integrated optical power distribution device based on quartz substrate, has the advantages of small volume, wide wavelength range, high reliability, light uniformity is good, ...