-
...efficient amplifier designed to deliver high power and excellent performance within the L-band frequency range. Below are the detailed features and potential applications for this power amplifier: Key Features: Frequency Range: Operates within the 1 GHz to
...efficient amplifier designed to deliver high power and excellent performance within the L-band frequency range. Below are the detailed features and potential applications for this power amplifier: Key Features: Frequency Range: Operates within the 1 GHz to more
Brand Name:SWT
Model Number:SW-PA-10002000-40C
Place of Origin:China
-
.... With high performance Spurious Suppression of ≤-60dBc, Gain Flatness of ≤±0.5dB, Noise Figure of 2.5dB, Gain of 30 To 40dB and Output Power of 10 To 20W, our RF Jammer Module will meet your different needs.
-
...10W 20W 40W 50W 100W 5.8G RF Power Amplifier Module for Anti Drone RF Jammer Descriptions: 1.This high output power and high gain power RF amplifier can be widely used for drone countermeasure devices and systems. It can support blocking 5.8G band, the output power is up to 50W , very long range interference effect . 2.5W,10W,20W,30W,40W,50W,100W,200W output power can be chose, which are available. 4. RF power amplifier...
...10W 20W 40W 50W 100W 5.8G RF Power Amplifier Module for Anti Drone RF Jammer Descriptions: 1.This high output power and high gain power RF amplifier can be widely used for drone countermeasure devices and systems. It can support blocking 5.8G band, the output power is up to 50W , very long range interference effect . 2.5W,10W,20W,30W,40W,50W,100W,200W output power can be chose, which are available. 4. RF power amplifier... more
Brand Name:TeXin ,OEM
Model Number:TX-5.8RFPA
Place of Origin:China
5W - 100W 5.8G RF Power Amplifier Module For Anti Drone RF Jammer
-
10W High Power 55dB Gain Broadband TD LTE 1500MHz 10W OFDM Product Description: LTE Power Amplifier is an ideal solution for data transmission applications due to its high power, low noise performance. It features a 28V power supply, a gain of more than 55dB, an efficiency of over 26%, and a temperature range of -20 to 65 degrees Celsius. It is capable of amplifying an OFDM signal with an input power...
10W High Power 55dB Gain Broadband TD LTE 1500MHz 10W OFDM Product Description: LTE Power Amplifier is an ideal solution for data transmission applications due to its high power, low noise performance. It features a 28V power supply, a gain of more than 55dB, an efficiency of over 26%, and a temperature range of -20 to 65 degrees Celsius. It is capable of amplifying an OFDM signal with an input power... more
Brand Name:MXT
Model Number:TDD1200T1500M 10W-28V
Place of Origin:China
55dB Gain Digital RF Power Amplifier 10W High Power LTE 1500MHz
-
High Power Linear RF Power Amplifier 25 Watt Support 868Mhz / 915Mhz Features: The integrated Noise source and RF PA in one house, smaller size and only connect DC28V,6A to it Prevent the interference of high radiated RF power to monitoring-unit and PA-...
High Power Linear RF Power Amplifier 25 Watt Support 868Mhz / 915Mhz Features: The integrated Noise source and RF PA in one house, smaller size and only connect DC28V,6A to it Prevent the interference of high radiated RF power to monitoring-unit and PA-... more
Brand Name:Kimpok Technology / OEM
Model Number:KP-LAM800-25W
Place of Origin:China
43dBm High Power Linear Amplifier , linear rf power amplifier 1550MHz-1590 MHz
-
High Power Linear RF Power Amplifier 25 Watt Support 868Mhz / 915Mhz Features: The integrated Noise source and RF PA in one house, smaller size and only connect DC28V,6A to it Prevent the interference of high radiated RF power to monitoring-unit and PA-...
High Power Linear RF Power Amplifier 25 Watt Support 868Mhz / 915Mhz Features: The integrated Noise source and RF PA in one house, smaller size and only connect DC28V,6A to it Prevent the interference of high radiated RF power to monitoring-unit and PA-... more
Brand Name:Ding Shen
Model Number:DS-LAM800-25W
Place of Origin:China
43dBm High Power Linear Amplifier , linear rf power amplifier 1550MHz-1590 MHz
-
...-40°C. 2.This document stipulates the radio frequency and monitoring technical indicators of the 1.2G 50W power amplifier module, the definition of each port of the module, the appearance and structure of the module, etc. 3.This document applies to all
-
... Note Power amplifier Working Frequency (MHz) 800MHz+50MHz Max output power(dBm) 32dBm±1dBm (No ALC control) Passband group delay(ns) ≤50ns Gain(dB) 40dB±1dB Passband ...
-
...10W 2.4G Sweep Signal Source Jamming Module RF Power Amplifier 1dB In-band Fluctuation Product Description It is a wireless signal shielding module dedicated to 2400-2500MHz signal. This module has the advantages of high average output power, good in band flatness, small upper and lower sideband offset and so on. Feature Signal bandwidth: 2400-2500MHz Output power: 41dBm Working voltage: 28V Power...
...10W 2.4G Sweep Signal Source Jamming Module RF Power Amplifier 1dB In-band Fluctuation Product Description It is a wireless signal shielding module dedicated to 2400-2500MHz signal. This module has the advantages of high average output power, good in band flatness, small upper and lower sideband offset and so on. Feature Signal bandwidth: 2400-2500MHz Output power: 41dBm Working voltage: 28V Power... more
Brand Name:SZHUASHI
Model Number:YJM072710B-2325
Place of Origin:Jiangsu, China
10W 2.4G Jamming Module RF Power Amplifier Anti Drone PCBA Customized Series
-
HN-PA20W_550:550MHz COFDM 20W RF power amplifier Radio frequency index: Frequency 550MHz Bandwidth range 30MHz Max output power 43±1.0dBm ALC control range ≥20dB Band group delay ≤50ns Gain 50±1.0dB Gain adjustment ...
HN-PA20W_550:550MHz COFDM 20W RF power amplifier Radio frequency index: Frequency 550MHz Bandwidth range 30MHz Max output power 43±1.0dBm ALC control range ≥20dB Band group delay ≤50ns Gain 50±1.0dB Gain adjustment ... more
Brand Name:HuaNuo
Model Number:HN-PA20W_550
Place of Origin:China
550MHz COFDM 20W RF power amplifier
-
...RF Power Amplifier Module 80x50x16mm for LTE/NR Frequency Product Description: The latest Power Amplifier Module from our company has superior performance, offering 40dBm of gain (depending on different models), a working current of ≤0.8A, an input/output VSWR of ≤1.5, and a passband ripple of ≤2.0dB. Its compact size of 80x50x16mm makes it ideal for space-constrained applications. This digital power amplifier module is designed for RF
...RF Power Amplifier Module 80x50x16mm for LTE/NR Frequency Product Description: The latest Power Amplifier Module from our company has superior performance, offering 40dBm of gain (depending on different models), a working current of ≤0.8A, an input/output VSWR of ≤1.5, and a passband ripple of ≤2.0dB. Its compact size of 80x50x16mm makes it ideal for space-constrained applications. This digital power amplifier module is designed for RF more
Brand Name:EST
Model Number:LTE20W-B1
Place of Origin:CHINA
20W RF Power Amplifier Module 80x50x16mm for LTE/NR Frequency
-
...Power and Frequnecy support Customzation form 90MHZ- 6G, 10W,20W,30W, 40W, 50w,100W,150W,200W The radio frequency and monitoring technical indicators of the power amplifier module stipulate the definition of each port of the module and the shape and structure of the module. Place of Origin Guangdong, China Brand Name LDSK Place of Origin Guangdong, China Product Name RF power amplifier...
...Power and Frequnecy support Customzation form 90MHZ- 6G, 10W,20W,30W, 40W, 50w,100W,150W,200W The radio frequency and monitoring technical indicators of the power amplifier module stipulate the definition of each port of the module and the shape and structure of the module. Place of Origin Guangdong, China Brand Name LDSK Place of Origin Guangdong, China Product Name RF power amplifier... more
Brand Name:LDSK
Place of Origin:Guangdong, China
Minimum Order Quantity:1 piece
WiFi Frequency Range 1.2GHz 136g Module Anti Drone RF Power Amplifier PA Module 1150-1300MHz Anti Fpv
-
...RF POWER AMPLIFIERS Description: . . . designed specifically for the Pan European digital 2.0 watt, GSM hand–held radio. The MHW903, MHW953 and MHW954 are capable of wide power range control, operate from a 7.2 volt supply and require 1.0 mW (MHW903 / 953) or 100 mW (MHW954) of RF input power. • Specified 7.2 Volt Characteristics: RF Input Power...
...RF POWER AMPLIFIERS Description: . . . designed specifically for the Pan European digital 2.0 watt, GSM hand–held radio. The MHW903, MHW953 and MHW954 are capable of wide power range control, operate from a 7.2 volt supply and require 1.0 mW (MHW903 / 953) or 100 mW (MHW954) of RF input power. • Specified 7.2 Volt Characteristics: RF Input Power... more
Brand Name:Motorola
Model Number:MHW903
Place of Origin:Freescale Semiconductor
RF Power Transistors MHW903 - Motorola, Inc - 3.5 W 890 to 915 MHz RF POWER AMPLIFIERS
-
2W COFDM RF Power Amplifier for Long Range Drone UAV Video Link 12-18VDC Introduction The PA700MHz-2W is a 2 watts COFDM power amplifier specially designed for UAV video transmission, it features small size and light weight, and supports 690-710MHz ...
2W COFDM RF Power Amplifier for Long Range Drone UAV Video Link 12-18VDC Introduction The PA700MHz-2W is a 2 watts COFDM power amplifier specially designed for UAV video transmission, it features small size and light weight, and supports 690-710MHz ... more
Brand Name:OEM
Model Number:PA700MHz-2W
Place of Origin:China
2W COFDM RF Power Amplifier for Long Range Drone UAV Video Link 12-18VDC
-
...RF Power Amplifier – High-Integration Device for EMC Testing & Signal Amplification Product Description This PA1800-2700MHz 100W RF Power Amplifier is engineered for professional signal amplification, combining high performance with robust functionality. Key Features High Integration: Compact structure ensures seamless integration into various systems. Testing Capability: Supports power...
-
...Power 30 W Work Voltage 24-28 V Max Gain 45 dB Flatness ±1 dB Max Current 4 A Output VSWR ≤1.5 Output Connector SMA/F 50Ω Power Amplifier Efficiency 45(when Max Output) Switch Control 0V off /0.6 on Standing Wave Protection OK Temperature Protection 75 ℃ Size 139*53*19 mm Weight 0.268 Kg Product Description The 30 Watt RF Power Amplifier Module is used to amplify RF
...Power 30 W Work Voltage 24-28 V Max Gain 45 dB Flatness ±1 dB Max Current 4 A Output VSWR ≤1.5 Output Connector SMA/F 50Ω Power Amplifier Efficiency 45(when Max Output) Switch Control 0V off /0.6 on Standing Wave Protection OK Temperature Protection 75 ℃ Size 139*53*19 mm Weight 0.268 Kg Product Description The 30 Watt RF Power Amplifier Module is used to amplify RF more
Brand Name:flysafe
Place of Origin:Guangdong, China
Minimum Order Quantity:1
RF Power Amplifier Signal Jammer Module 30W 24V-28V
-
... Number of Transistors: 7 Configuration: Single-Ended Power Output: +28dBm Gain: 16dB Operating Frequency: 0.05-6GHz Input/Output Impedance: 50Ω Operating Voltage: 5V ...
... Number of Transistors: 7 Configuration: Single-Ended Power Output: +28dBm Gain: 16dB Operating Frequency: 0.05-6GHz Input/Output Impedance: 50Ω Operating Voltage: 5V ... more
Brand Name:Analog Devices Inc.
Model Number:AD8361ARMZ-REEL7
Place of Origin:Multi-origin
AD8361ARMZ-REEL7 Rf Power Amplifier Transistor
-
... TO-220 Style Power Package, Isolated Case, Non Inductive. Single Screw Mounting to Heat Sink. Molded Case for Protection and Easy to Mount. Applications : RF Power Amplifier, Automated Machine Controller, Voltage Regulation. Switching Power Supplies, UPS,
-
NPN SILICON rf power mosfet transistors for RF power amplifiers on VHF band Mobile radio , 2SC1972 DESCRIPTION: The ASI 2SC1972 is Designed for RF power amplifiers on VHF band mobile radio applications. FEATURES INCLUDE: • Replaces Original 2SC1972 in ...
-
2SC1971 C1971 TO220 NPN epitaxial planar type transistor designed for RF power amplifiers Description: silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHF band mobile radio applications. List Of Other Electronic Components...
2SC1971 C1971 TO220 NPN epitaxial planar type transistor designed for RF power amplifiers Description: silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHF band mobile radio applications. List Of Other Electronic Components... more
Brand Name:Mitsubishi Electric Semiconductor
Model Number:2SC1971
Place of Origin:CHINA
2SC1971 C1971 TO220 Epitaxial Planar NPN Transistor For RF Power Amplifiers