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...HEXFE Power MOSFET Transistor 100V 44mΩ 33A New Orignal high quality Parameters in details: Advanced HEXFET Power MOSFETs from Packaging: the TO - 263 Type: N channel Continuous drain current (ID) at 25°C: 33A Drain-source voltage (VDSS) : 100V Gate source threshold voltage: 4V @ 250uA Leakage source on resistance: 44 MQ2@16A,10V Maximum power...
...HEXFE Power MOSFET Transistor 100V 44mΩ 33A New Orignal high quality Parameters in details: Advanced HEXFET Power MOSFETs from Packaging: the TO - 263 Type: N channel Continuous drain current (ID) at 25°C: 33A Drain-source voltage (VDSS) : 100V Gate source threshold voltage: 4V @ 250uA Leakage source on resistance: 44 MQ2@16A,10V Maximum power... more
Brand Name:INFINEON
Model Number:IRF540NSTRLPBF
Place of Origin:Germany
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Integrated Circuit Chip IPT020N10N5ATMA1 100V Power MOSFET Transistor 8-PowerSFN Product Description Of IPT020N10N5ATMA1 IPT020N10N5ATMA1 is OptiMOS™ 5 100V industrial power MOSFET Transistors in TO-Leadless is the ideal choice for high switching ...
Integrated Circuit Chip IPT020N10N5ATMA1 100V Power MOSFET Transistor 8-PowerSFN Product Description Of IPT020N10N5ATMA1 IPT020N10N5ATMA1 is OptiMOS™ 5 100V industrial power MOSFET Transistors in TO-Leadless is the ideal choice for high switching ... more
Brand Name:Original Factory
Model Number:IPT020N10N5ATMA1
Place of Origin:CN
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...100V, 0.300 Ohm, N-Channel Power MOSFET This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors
...100V, 0.300 Ohm, N-Channel Power MOSFET This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors more
Brand Name:Anterwell
Model Number:IRFD120
Place of Origin:original factory
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...MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 72A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 14 mOhm @ 45A, 10V Vgs(th) (Max) @ Id 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 170nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 6160pF @ 25V Power...
...MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 72A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 14 mOhm @ 45A, 10V Vgs(th) (Max) @ Id 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 170nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 6160pF @ 25V Power... more
Brand Name:Original
Model Number:IRFP4710PBF, IRFP460PBF
Place of Origin:US
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..., tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and
..., tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and more
Model Number:IRF9540
Place of Origin:original factory
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...POWER MOSFET TRANSISTORS M68702H FOR FM MOBILE RADIO Condition: 100% Brand New Product Part Status: Active Package: H2 Lead Free Status / RoHS Status: Compliant Output Power: 60W Voltage: 12.5V High Light: n channel mosfet transistor , n channel transistor M68702H 150-175MHz, 12.5V, 60W, RF Power module transistor...
...POWER MOSFET TRANSISTORS M68702H FOR FM MOBILE RADIO Condition: 100% Brand New Product Part Status: Active Package: H2 Lead Free Status / RoHS Status: Compliant Output Power: 60W Voltage: 12.5V High Light: n channel mosfet transistor , n channel transistor M68702H 150-175MHz, 12.5V, 60W, RF Power module transistor... more
Brand Name:original
Model Number:M68702H
Place of Origin:Original Manufacturer
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... Resistance: Low Rds(ON) Material: Silicon Power Consumption: Low Power Loss Thermal Robustness Motor Driving Advanced Trench Technology Technical Parameters: Efficiency High Efficiency And Reliable Power Consumption Low Power Loss Resistance Low Rds(ON)
... Resistance: Low Rds(ON) Material: Silicon Power Consumption: Low Power Loss Thermal Robustness Motor Driving Advanced Trench Technology Technical Parameters: Efficiency High Efficiency And Reliable Power Consumption Low Power Loss Resistance Low Rds(ON) more
Brand Name:Lingxun
Model Number:CS28N20AT
Place of Origin:China
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...power your electronic devices, then the IRFP460LC Power MOSFET might be just what you need. This high-performance transistor is ideal for use in a broad range of applications, from audio amplifiers to motor control circuits. Here are some pros and cons to
...power your electronic devices, then the IRFP460LC Power MOSFET might be just what you need. This high-performance transistor is ideal for use in a broad range of applications, from audio amplifiers to motor control circuits. Here are some pros and cons to more
Brand Name:Vishay / Siliconix
Model Number:IRFP460LC
Part no.:IRFP460LC
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FDD3672 - High Power MOSFET Transistor for Advanced Power Electronics Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100 V Current - Continuous Drain (Id) @ 25°C 6.5A (Ta), 44A (...
FDD3672 - High Power MOSFET Transistor for Advanced Power Electronics Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100 V Current - Continuous Drain (Id) @ 25°C 6.5A (Ta), 44A (... more
Brand Name:onsemi
Model Number:FDD3672
Place of Origin:original
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...Power Mosfet Transistors Field Effect Transistor Discrete N-Channel N-channel 600 V, 0.13 Ω typ., 21 A MDmesh™ DM2 Power MOSFETs in D²PAK, TO-220 and TO-247 packages App Characteristics Features Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected Description These high voltage N-channel Power
...Power Mosfet Transistors Field Effect Transistor Discrete N-Channel N-channel 600 V, 0.13 Ω typ., 21 A MDmesh™ DM2 Power MOSFETs in D²PAK, TO-220 and TO-247 packages App Characteristics Features Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected Description These high voltage N-channel Power more
Brand Name:STMicroelectronics
Model Number:STB24N60DM2
Minimum Order Quantity:Negotiable
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... to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is
... to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is more
Brand Name:Original brand
Model Number:NVHL040N65S3F
Place of Origin:Original
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M68702H 150-175MHz, 12.5V, 60W, RF Power module transistor for FM MOBILE RADIO List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND PART NUMBER MFG/BRAND SS513AT HONEYWELL RT2528L RALNK RT5501WSC RICHTEK IRG4RC20FTR IR RF071M2STR ROHM...
M68702H 150-175MHz, 12.5V, 60W, RF Power module transistor for FM MOBILE RADIO List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND PART NUMBER MFG/BRAND SS513AT HONEYWELL RT2528L RALNK RT5501WSC RICHTEK IRG4RC20FTR IR RF071M2STR ROHM... more
Brand Name:Mitsubishi
Model Number:M68702H
Place of Origin:JP
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AOD442/AOI442 60V N-Channel MOSFET General Description The AOD442/AOI442 used advanced trench technology to provide excellent R DS(ON) and low gate charge. Those devices are suitable for use as a load switch or in PWM applications. Parameters Part Number ...
AOD442/AOI442 60V N-Channel MOSFET General Description The AOD442/AOI442 used advanced trench technology to provide excellent R DS(ON) and low gate charge. Those devices are suitable for use as a load switch or in PWM applications. Parameters Part Number ... more
Brand Name:Hua Xuan Yang
Model Number:AOD442
Place of Origin:ShenZhen China
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Low Voltage MOSFET Trench Process Wireless Charging High EAS Capability *, *::before, *::after {box-sizing: border-box; } * {margin: 0; } html, body {height: 100%; } body {line-height: 1.5; -webkit-font-smoothing: antialiased; } img, picture, video, canvas...
Low Voltage MOSFET Trench Process Wireless Charging High EAS Capability *, *::before, *::after {box-sizing: border-box; } * {margin: 0; } html, body {height: 100%; } body {line-height: 1.5; -webkit-font-smoothing: antialiased; } img, picture, video, canvas... more
Brand Name:REASUNOS
Place of Origin:Guangdong, CN
Price:Confirm price based on product
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#detail_decorate_root .magic-0{width:750px}#detail_decorate_root .magic-1{overflow:hidden;width:750px;height:405.95399188092017px;margin-top:0;margin-bottom:0;margin-left:0;margin-right:0}#detail_decorate_root .magic-2{margin-top:-3px;margin-left:0;width:...
#detail_decorate_root .magic-0{width:750px}#detail_decorate_root .magic-1{overflow:hidden;width:750px;height:405.95399188092017px;margin-top:0;margin-bottom:0;margin-left:0;margin-right:0}#detail_decorate_root .magic-2{margin-top:-3px;margin-left:0;width:... more
Brand Name:Original
Model Number:MBRF30100CT
Place of Origin:United States
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...extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in
...extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in more
Brand Name:Infineon
Model Number:IRF9540NPBF
Place of Origin:Original Factory
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...MOSFET 2N/2P-CH 100V/80V 12-MLP Original Mosfet Transistor Products Description: 1. FDMQ8203 dual-channel FET, MOSFET, N and P channels, 6 A, 100 V, 0.085 OHM, 10 V, 3 V 2. His Quad MOSFET Solution provides for a promise that provides a ten-fold improvement in the Power Dissipation over Diode Bridge. 3.High-Efficiency Bridge Rectifiers Technological Parameters: Polarity N - Channel dissipated power...
...MOSFET 2N/2P-CH 100V/80V 12-MLP Original Mosfet Transistor Products Description: 1. FDMQ8203 dual-channel FET, MOSFET, N and P channels, 6 A, 100 V, 0.085 OHM, 10 V, 3 V 2. His Quad MOSFET Solution provides for a promise that provides a ten-fold improvement in the Power Dissipation over Diode Bridge. 3.High-Efficiency Bridge Rectifiers Technological Parameters: Polarity N - Channel dissipated power... more
Brand Name:ON
Model Number:FDMQ8203
Place of Origin:America
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VRF2933 N/A Electronic Components IC MCU Microcontroller Integrated Circuits VRF2933w #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border-bottom-width...
VRF2933 N/A Electronic Components IC MCU Microcontroller Integrated Circuits VRF2933w #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border-bottom-width... more
Brand Name:KAIGENG
Model Number:VRF2933
Place of Origin:Malaysia
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... in selling the new and unused, original factory sealed packing electronic components. specialize in IC,MCU,Memory,Module,diode,transistor,IGBT,PCBA, prototype,BOM Kitting. Sunbeam Electronics has a
... in selling the new and unused, original factory sealed packing electronic components. specialize in IC,MCU,Memory,Module,diode,transistor,IGBT,PCBA, prototype,BOM Kitting. Sunbeam Electronics has a more
Brand Name:ONSEMI
Model Number:RFP12N10L
Place of Origin:China
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N-Channel 1000V Mosfet STF5NK100Z Switching Application 3.5A 100V 3.7Ohm Power MOSFET Applications Switching application Description The new SuperMESH™ series of Power MOSFETS is the result of further design improvements on ST's well-established strip ...
N-Channel 1000V Mosfet STF5NK100Z Switching Application 3.5A 100V 3.7Ohm Power MOSFET Applications Switching application Description The new SuperMESH™ series of Power MOSFETS is the result of further design improvements on ST's well-established strip ... more
Brand Name:STM
Model Number:STF5NK100Z
Place of Origin:Original
