H30R1353 H30R1602 H25R1202 IGBT Triode Transistor TO-247
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Product Detail Categories Discrete Semiconductor Products Transistors - IGBTs - Single Manufacturer Infineon Technologies Series TrenchStop® Packaging Tube Part Status Obsolete IGBT Type NPT, Trench Field Stop Voltage - Collector Emitter Breakdown (Max) ......
Shenzhen Quanyuantong Electronics Co., Ltd.
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IRFP90N20D Diode Triode Transistor Through Hole Mounting 600V 120A 378W
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...Transistor Diode Triode Bom Service T IGBT Field Stop 600V 120A 378W TO247 IRFP90N20D Product Paramenters Manufacturer: Standard Packaging: Tube Product Category: MOSFET Brand: standard RoHS: Details Configuration: Single Technology: Si Fall Time: 77 ns Mounting Style: Through Hole Height: 16.3 mm Package / Case: TO-220-3 Length: 10.67 mm Transistor......
ShenZhen QingFengYuan Technology Co.,Ltd.
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FGH60N60SMD IGBT Power Transistor
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Fgh60n60sfd Igbt Power Transistor 60a 600v To247 Igbt Transistors Description Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom......
Shenzhen Retechip Electronics Co., Ltd
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Automotive IGBT Modules FS75R12KE3BPSA1 IGBT Modules Transistors Chassis Mount
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Automotive IGBT Modules FS75R12KE3BPSA1 IGBT Modules Transistors Chassis Mount Product Description Of FS75R12KE3BPSA1 FS75R12KE3BPSA1 provide substrate with low thermal resistance, compact design, PressFIT contact technology, and rugged mounting due to ......
ShenZhen Mingjiada Electronics Co.,Ltd.
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Circuit Control Field Stop IGBT Power Transistor FGH60N60SMD 600V 60A
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... Parameter Distribution • RoHS compliant Applications • Solar Inverter, UPS, SMPS, PFC • Induction Heating Using Novel Field Stop IGBT Technology,...
Shenzhen Koben Electronics Co., Ltd.
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Bipolar IGBT Power Transistor Through Hole
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...Transistor Normal Temperature Product Description: An Insulated Gate Bipolar Transistor (IGBT) is a new and versatile electronic device with insulated gate, designed for use in general purpose applications. This device is designed to provide superior performance in demanding applications where normal voltage is required. The IGBT has the best of both worlds: the fast switching speed of a bipolar junction transistor...
MMR TECHNOLOGY HK LIMITED
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IXYK110N120A4 IGBT Power Transistor 1200V 375A 1360W Through Hole TO-264
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... thin-wafer technology and a state-of-the-art 4th generation (GenX4™) trench IGBT process. These insulated-gate bipolar transistors feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. The...
HongKong Wei Ya Hua Electronic Technology Co.,Limited
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MJE13003 Tip Power Transistors NPN Silicon Material Triode Transistor Type
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TO-126 Plastic-Encapsulate Transistors MJE13003 TRANSISTOR (NPN) FEATURE Ÿ Power Switching Applications MARKING MJE13003=Device code Solid dot = Green molding compound device, if none, the normal device ORDERING INFORMATION Part Number Package Packing ......
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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MJE13003 Tip Power Transistors NPN Silicon Material Triode Transistor Type
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TO-126 Plastic-Encapsulate Transistors MJE13003 TRANSISTOR (NPN) FEATURE Ÿ Power Switching Applications MARKING MJE13003=Device code Solid dot = Green molding compound device, if none, the normal device ORDERING INFORMATION Part Number Package Packing ......
Beijing Silk Road Enterprise Management Services Co.,LTD
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650V-1200V IGBT Power Transistor For High Power Electronic Controls
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...Transistor IGBT For High-Power Electronic Controls Product Description: The High-Power IGBT is packaged in a TO-247 package type, which is ideal for high-power applications. It has a voltage rating of 650V-1200V and can operate at an application frequency of 20KHz-60KHz, making it suitable for various applications. One of the key features of the High-Power IGBT......
Guangdong Lingxun Microelectronics Co., Ltd
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