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4inch Dia100mm GaN Template NPSS FSS AlN Template AlGaN/GaN HEMT wafers

China 4inch Dia100mm GaN Template NPSS FSS AlN Template  AlGaN/GaN HEMT wafers on sale
...GaN substrates template,GaN wafer for LeD,semiconducting Gallium Nitride Wafer for ld,GaN template, mocvd GaN Wafer,Free-standing GaN Substrates by Customized size,small size GaN wafer for LED, mocvd Gallium Nitride wafer 10x10mm,5x5mm, 10x5mm GaN wafer,Non-Polar Freestanding GaN Substrates(a-plane and m-plane) GaN Wafer Characteristic III-Nitride(GaN......
SHANGHAI FAMOUS TRADE CO.,LTD

Address: Room.1-1805,No.1079 Dianshanhu Road,Qingpu Area Shanghai city, China /201799

GaN Template Grow Application SSP Sapphire Carrier Substrate Chip Custom Orientation

China GaN Template Grow Application SSP Sapphire Carrier Substrate Chip Custom Orientation on sale
...Sapphire carrier substrate chip for GaN template grow application Sapphire wafer carriers are manufactured to exacting specifications and offer a stable carrier for processing GaAs,GaN,AlN and other semiconductors Template. Sapphire wafer carriers are ......
SHANGHAI FAMOUS TRADE CO.,LTD

Address: Room.1-1805,No.1079 Dianshanhu Road,Qingpu Area Shanghai city, China /201799

GaN Templates 2 & 4 inch

China GaN Templates 2 & 4 inch on sale
...GaN Templates: Dimensions:Ф 50.8mm ± 0.1mm Thickness:4 µm, 20 µm; 4 µm Orientation:C-plane(0001) ± 0.5° Conduction Type:N-type(Undoped); N-type(Si-doped); P-type(Mg-doped) Resistivity(300K): < 0.5 Ω·cm; < 0.05 Ω·cm; ~ 10 Ω·cm Carrier Concentration: < 5x1017 cm-3; > 1x1018 cm-3; > 6x1016 cm-3 Mobility: ~ 300cm2/V·s; ~ 200 cm2/V·s; ~ 10 cm2/V·s Dislocation Density: Less than 5x108 cm-2 Substrate structure: GaN......
Chongqing Newsin Technology Co., Ltd

Address: Block 4, No. 5, Torch Ave, Jiulongpo District, Chongqing,400080 China

10*10mm2 Mg-Doped GaN Epitaxial Wafers On Sapphire Substrates For GaN Power Amplifier

China 10*10mm2 Mg-Doped GaN Epitaxial Wafers On Sapphire Substrates For GaN Power Amplifier on sale
...GaN Epitaxial Wafers On Sapphire Substrates For GaN Power Amplifier PAM-XIAMEN’s Template Products consist of crystalline layers of gallium nitride (GaN), aluminum nitride (AlN),aluminum gallium nitride (AlGaN)and indium gallium nitride (InGaN), which are deposited on sapphire substrates. PAM-XIAMEN’s Template......
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.

Address: #506B, Henghui Business Center, No.77, Lingxia Nan Road, High Technology Zone, Huli, Xiamen 361006, China

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Products: 10*10mm2 Mg-Doped GaN Epitaxial Wafers On Sapphire Substrates For GaN Power Amplifier

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