N-InP Substrate Bandwidth 02:2.5G Wavelength 1270nm Epi Wafer For FP Laser Diode
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...InP substrate bandwidth 02:2.5G wavelength 1270nm epi wafer for FP laser diode N-InP substrate FP Epiwafer's Overview Our N-InP Substrate FP Epiwafer is a high-performance epitaxial wafer designed for the fabrication of Fabry-Pérot (FP) laser diodes, specifically optimized for optical communication applications. This Epiwafer features an N-type Indium Phosphide (N-InP) substrate......
SHANGHAI FAMOUS TRADE CO.,LTD
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InP FP Epiwafer InP Substrate N/p Type 2 3 4 Inch With Thickeness Of 350-650um For Optical Net Work
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InP FP epiwafer InP substrate n/p type 2 3 4 inch with thickeness of 350-650um for optical net work InP epiwafer's Overview Indium Phosphide (InP) Epiwafer is a key material used in advanced optoelectronic devices, particularly Fabry-Perot (FP) laser diodes. InP Epiwafers consist of epitaxially grown layers on an InP substrate, designed for high-performance applications in telecommunications, data centers, and sensing technologies. InP-based FP...
SHANGHAI FAMOUS TRADE CO.,LTD
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LC TOSA Optical SubAssembly 1310nm 1550nm FP DFB 1.25G 2.5G 3G 10G Transmitter Optical Subassembly
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... threshold current and high performance at high temperature, ideally suitable for short reach applications of data rates from 155M to 2.5G. A laser diode is mounted into a...
Shenzhen Gigaopto Technology Co., Ltd.
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