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compare mosfet and igbt

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Automotive IGBT Modules FS28MR12W1M1HB70 1200V CoolSiC MOSFET Sixpack IGBT Module

China Automotive IGBT Modules FS28MR12W1M1HB70 1200V CoolSiC MOSFET Sixpack IGBT Module on sale
Automotive IGBT Modules FS28MR12W1M1HB70 1200V CoolSiC MOSFET Sixpack IGBT Module [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + ......
ShenZhen Mingjiada Electronics Co.,Ltd.

Address: 1239 New Asia Guoli Building Zhenzhong Road.,Futian district Shenzhen China

IR2104STRPBF Semiconductor IC Chip - High Speed MOSFET And IGBT Driver

China IR2104STRPBF Semiconductor IC Chip - High Speed MOSFET And IGBT Driver on sale
... MOSFET and IGBT driver with independent high and low side referenced output channels. It is designed to drive a wide range of power devices from low side referenced N-channel MOSFETs and IGBTs to high side referenced P-channel MOSFETs. Features: •Extended output......
Shenzhen Sai Collie Technology Co., Ltd.

Address: 1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen

NCS20074DTBR2G High-Speed Dual MOSFET Driver For Power MOSFETs And IGBTs

China NCS20074DTBR2G High-Speed Dual MOSFET Driver For Power MOSFETs And IGBTs on sale
... two N-channel MOSFETs or IGBTs in a half-bridge configuration. Its fast rise and fall time (15ns typical) and wide input voltage range (4.5V to 18V) ......
rongxing international trade co.,limited

Address: Room 2409, 24/F, Block A, Hoover Building 38 Kwai Cheong Road, Kwai Chung, Hong Kong. CHINA

High Speed Gate Driver IC JY21L Optimal Control For Power MOSFET And IGBT

China High Speed Gate Driver IC JY21L Optimal Control For Power MOSFET And IGBT on sale
... The product is a high voltage, high speed power MOSFET and IGBT driver based on P-SUB P-EPI process. The floating channel driver can be used to drive two N-channel power MOSFET or IGBT independently which operates up to 150V. Logic inputs are compatible......
Changzhou Bextreme Shell Motor Technology Co.,Ltd

Address: No.8 Tianshan road, Xinbei district,Changzhou,Jiangsu,China.

STE40NC60 STE40NC60 N-CHANNEL 600V - 0.098ohm - 40A ISOTOP PowerMesh™II MOSFET MITSUBISHI igbt power module

China STE40NC60 STE40NC60 N-CHANNEL 600V - 0.098ohm - 40A ISOTOP PowerMesh™II MOSFET MITSUBISHI igbt power module on sale
...Overview We specialize in high power and power conversion modules of famous brands Categories include: Darlington Schottky, rectifier intelligent, IGBT, IPM, GTR, DC-DC, AC-DC rectifier and power supply and other modules. Applications: power conditioning,...
Mega Source Elec.Limited

Address: R-62852 Golconda Electronic Market ,Zhenhua Road ,Futian District .SZ.CN.518031

EPA4493G-LF SMPS 250uH Gate Drive Transformer High Speed Switching Transformer for AC Coupled MOSFET and IGBT Gate Drive

China EPA4493G-LF SMPS 250uH Gate Drive Transformer High Speed Switching Transformer for AC Coupled MOSFET and IGBT Gate Drive on sale
... EPA4493G-LF SMPS 250uH Gate Drive Transformer Characteristics: ● High Speed Switching Transformer for AC Coupled MOSFET and IGBT Gate Drive Circuits ● Low Leakage Inductance ● Class B Insulation System ● Switching Frequency: 100 kHz to 2 MHz ● ......
SHAREWAY TECHNOLOGY CO., LTD.

Address: 706, Huafa xiezilou ,Huafa North Rd., Gongming Street , 518106 , SHEN ZHEN ,CHINA

Infineon Technologies Mosfet Single IGBT Power Module Transistors 600V 23A 100W IRG4BC30UDPBF

China Infineon Technologies Mosfet Single IGBT Power Module Transistors 600V 23A 100W IRG4BC30UDPBF on sale
IRG4BC30UDPBF IGBT Power Module Transistors IGBTs Single IRG4BC30UDPBF Specifications Part Status Active IGBT Type - Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 23A Current - Collector Pulsed (Icm) 92A Vce(on) (Max) @ ......
KZ TECHNOLOGY (HONGKONG) LIMITED

Address: RM4,16/F HO KING COMM CRT 2-16 FAYUEN ST MONGKOKKL

JUYI Tech 450mA / 850mA Mosfet High Side Switch , 3.3V Logic Compatible Bldc Mosfet Driver

China JUYI Tech 450mA / 850mA Mosfet High Side Switch , 3.3V Logic Compatible Bldc Mosfet Driver on sale
...IGBT driver based on P-SUB P-EPI process. The floating channel driver can be used to drive two N-channel power MOSFET or IGBT independently which operates up to 150V. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic. The...
Shanghai Juyi Electronic Technology Development Co., Ltd

Address: No. 1, lane 1199, yunping road, jiading district, Shanghai,China

IR2110PBF IGBT Drivers Ic Chip Mosfet Power Transistor Half Bridge Gate Driver IC 14-DIP

China IR2110PBF IGBT Drivers Ic Chip Mosfet Power Transistor Half Bridge Gate Driver IC 14-DIP on sale
IR2110PBF power MOSFET and IGBT drivers Ic Chip Half-Bridge Gate Driver IC 14-DIP Description The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and ......
Shenzhen ATFU Electronics Technology ltd

Address: Room 1120, Floor 11rd, New Asia Guoli Building, Futian District,Shenzhen City, Guangdong Province China,Zip:518031

SGP02N120 Power Mosfet Transistor Fast S-IGBT in NPT-technology

China SGP02N120 Power Mosfet Transistor Fast S-IGBT in NPT-technology on sale
SGP02N120, SGB02N120, SGD02N120 Fast S-IGBT in NPT-technology • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter ......
Anterwell Technology Ltd.

Address: Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China

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