| Categories | SiC Substrate |
|---|---|
| Brand Name: | ZMSH |
| Model Number: | 4H-P SiC |
| Certification: | rohs |
| Place of Origin: | CHINA |
| MOQ: | 10pc |
| Price: | by case |
| Payment Terms: | T/T |
| Supply Ability: | 1000pc/month |
| Delivery Time: | in 30days |
| Packaging Details: | customzied plastic box |
| Size: | 5*5mm/10*10mm |
| Surface Hardness: | HV0.3>2500 |
| Density: | 3.21 G/cm3 |
| Thermal Expansion Coefficient: | 4.5 X 10-6/K |
| Dielectric Constant: | 9.7 |
| Tensile Strength: | >400MPa |
| Breakdown Voltage: | 5.5 MV/cm |
| Applications: | Electric vehicles, satellite communications |
Product Description:
Sic Silicon Carbide Wafer 5*5mm/10*10mm 4H-P Type Production Grade For Power Electronics
4H-P silicon carbide (SiC) is an important semiconductor material commonly used in high-temperature, high-frequency, and high-power electronic devices. 4H-SiC is a type of its crystal structure that has a hexagonal lattice structure. The wide bandgap (approx. 3.26 eV) allows it to operate in high temperature and high voltage environments. High thermal conductivity (about 4.9 W/m ·· K), superior to silicon, can effectively guide and dissipate heat. P-type doped silicon carbide has a low resistivity and is suitable for the construction of PN junctions. With the development of electric vehicles and renewable energy technologies, the demand for 4H-P type silicon carbide is expected to continue to grow, driving related research and technological advancements.
Features:
· Type: 4H-SiC crystal has a hexagonal lattice structure and provides excellent electrical characteristics.
· Wide bandgap: approx. 3.26 eV for high temperature and high frequency applications.
· P-type doping: P-type conductivity is obtained by doping elements such as aluminum, increasing the pore conductor concentration.
· Resistivity: Low resistivity, suitable for high power devices.
· High thermal conductivity: approx. 4.9 W/m·K, effective heat dissipation, suitable for high power density applications.
· High temperature resistance: It can work stably in high temperature environment.
· High hardness: Very high mechanical strength and toughness for harsh conditions.
· High breakdown voltage: Able to withstand higher voltages and reduce device size.
· Low switching loss: Good switching characteristics in high-frequency operation to improve efficiency.
· Corrosion resistance: Good corrosion resistance to a wide range of chemicals.
· Wide range of applications: suitable for electric vehicles, inverters, high-power amplifiers and other fields.
Technical Parameters:
| 等级Grade | 精选级(Z 级) Zero MPD Production Grade (Z Grade) | 工业级(P 级) Standard Production Grade (P Grade) | 测试级(D 级) Dummy Grade (D Grade) | ||
| 直径 Diameter | 99.5 mm~100.0 mm | ||||
| 厚度 Thickness | 350 μm ± 25 μm | ||||
| 晶片方向 Wafer Orientation | Off axis: 2.0°-4.0°toward [112 | 0] ± 0.5° for 4H/6H-P, On axis:〈111〉± 0.5° for 3C-N | |||
| 微管密度 ※ Micropipe Density | 0 cm-2 | ||||
| 电 阻 率 ※ Resistivity | p-type 4H/6H-P | ≤0.1 Ωꞏcm | ≤0.3 Ωꞏcm | ||
| n-type 3C-N | ≤0.8 mΩꞏcm | ≤1 m Ωꞏcm | |||
主定位边方向 primary Flat Orientation | 4H/6H-P | - {1010} ± 5.0° | |||
| 3C-N | - {110} ± 5.0° | ||||
| 主定位边长度 Primary Flat Length | 32.5 mm ± 2.0 mm | ||||
| 次定位边长度 Secondary Flat Length | 18.0 mm ± 2.0 mm | ||||
| 次定位边方向 Secondary Flat Orientation | Silicon face up: 90° CW. from Prime flat ± 5.0° | ||||
| 边缘去除 Edge Exclusion | 3 mm | 6 mm | |||
| 局部厚度变化/总厚度变化/弯曲度/翘曲度 LTV/TTV/Bow /Warp | ≤2.5 μm/≤5 μm/≤15 μm/≤30 μm | ≤10 μm/≤15 μm/≤25 μm/≤40 μm | |||
| 表面粗糙度 ※ Roughness | Polish Ra≤1 nm | ||||
| CMP Ra≤0.2 nm | Ra≤0.5 nm | ||||
| 边缘裂纹(强光灯观测) Edge Cracks By High Intensity Light | None | Cumulative length ≤ 10 mm, single length≤2 mm | |||
| 六方空洞(强光灯测) ※ Hex Plates By High Intensity Light | Cumulative area ≤0.05% | Cumulative area ≤0.1% | |||
| 多型(强光灯观测) ※ Polytype Areas By High Intensity Light | None | Cumulative area≤3% | |||
| 目测包裹物(日光灯观测) Visual Carbon Inclusions | Cumulative area ≤0.05% | Cumulative area ≤3% | |||
| 硅面划痕(强光灯观测) # Silicon Surface Scratches By High Intensity Light | None | Cumulative length≤1×wafer diameter | |||
| 崩边(强光灯观测) Edge Chips High By Intensity Light | None permitted ≥0.2mm width and depth | 5 allowed, ≤1 mm each | |||
| 硅面污染物(强光灯观测) Silicon Surface Contamination By High Intensity | None | ||||
Applications:
1. Power electronics
Power converters: For efficient power adapters and inverters for
smaller size and higher energy efficiency.
Electric vehicles: Optimize power conversion efficiency in drive
modules and charging stations for electric vehicles.
2. RF devices
Microwave amplifiers: Used in communication and radar systems to
provide reliable high-frequency performance.
Satellite Communications: High-power amplifier for communication
satellites.
3. High temperature applications
Sensor: A sensor used in extreme temperature environments, capable
of stable operation.
Industrial equipment: equipment and instruments adapted to high
temperature conditions.
4. Optoelectronics
LED technology: Used to improve luminous efficiency in specific
short-wavelength LEDs.
Lasers: Efficient laser applications.
5. Power system
Smart Grid: Improving energy efficiency and stability in
high-voltage direct current (HVDC) transmission and grid
management.
6. Consumer Electronics
Fast charging device: A portable charger for electronic devices
that improves charging efficiency.
7. Renewable energy
Solar inverter: Achieve higher energy conversion efficiency in
photovoltaic systems.
Customization:
Our SiC substrate is available in the 4H-P type and is RoHS certified. The minimum order quantity is 10pc and the price is by case. The packaging details are customized plastic boxes. The delivery time is within 30 days and we accept T/T payment terms. Our supply ability is 1000pc/month. The SiC substrate size is 6Inch. Place of origin is China.
Our services:
ZMSH offers a comprehensive range of silicon carbide substrate 4H-P solutions, including high-precision cutting, professional polishing, customized doping, and rigorous quality testing to ensure that each substrate meets your specific needs for high-performance, highly reliable and long-life semiconductor devices.
FAQ:
1. Q: What is silicon carbide substrate 4H-P type?
A: Silicon Carbide substrate Type 4H-P is a silicon carbide
material with a specific crystal structure, mainly used in the
manufacture of high-performance power semiconductor devices.
2. Q: How to choose high quality 4H-P type silicon carbide
substrate?
A: Key parameters such as crystal quality, impurity concentration,
surface roughness and dimensional accuracy should be paid attention
to, and suppliers with a good reputation and strict quality control
should be selected.
3. Q: What are the key steps in the production process of 4H-P type
silicon carbide substrate?
A: Including raw material synthesis, crystal growth, cutting,
polishing and inspection steps, each step requires high precision
and strict control to ensure the quality of the final product.
Tag: #4H-P type Sic, #Silicon carbide substrate, #Silicon carbide polishing.
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