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BSC011N03LSI IGBT Power Module With High Current Low Internal Resistance

Categories IGBT Power Module
Brand Name: INFINEON
Model Number: BSC011N03LSI
Place of Origin: INFINEON
MOQ: 1
Price: Can discuss
Payment Terms: T/T
Supply Ability: 3000
Packaging Details: The cartons
Mounting Style: SMD/SMT
Package / Case: TDSON-8
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 30 V
Id - Continuous Drain Current: 230 A
Rds On - Drain-Source Resistance: 1.1 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
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BSC011N03LSI IGBT Power Module With High Current Low Internal Resistance

BSC011N03LSI IGBT Power Module With High Current Low Internal Resistance


BSC011N03LSI Mosfet TDSON-8 With High Current And Low Internal Resistance


Product AttributeAttribute ValueSearch Similar
Infineon
MOSFET
RoHS:Details
Si
SMD/SMT
TDSON-8
N-Channel
1 Channel
30 V
230 A
1.1 mOhms
- 20 V, + 20 V
2 V
68 nC
- 55 C
+ 150 C
96 W
Enhancement
OptiMOS
Reel
Cut Tape
MouseReel
Brand:Infineon Technologies
Configuration:Single
Fall Time:6.2 ns
Forward Transconductance - Min:80 S
Height:1.27 mm
Length:5.9 mm
Product Type:MOSFET
Rise Time:9.2 ns
5000
Subcategory:MOSFETs
Transistor Type:1 N-Channel
Typical Turn-Off Delay Time:35 ns
Typical Turn-On Delay Time:6.4 ns
Width:5.15 mm
Part # Aliases:BSC11N3LSIXT SP000884574 BSC011N03LSIATMA1
Unit Weight:0.003683 oz
Cheap BSC011N03LSI IGBT Power Module With High Current Low Internal Resistance for sale
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