| Categories | Electronic Passive Components |
|---|---|
| Brand Name: | Diodes Incorporated |
| Model Number: | ZXMN10A07FTA |
| Certification: | ISO9001 |
| Place of Origin: | China |
| MOQ: | >=2pcs |
| Price: | $1.66 |
| Payment Terms: | L/C, D/A, D/P, Western Union, T/T, |
| Supply Ability: | 60000 Acre/Acres Per 2-3Days |
| Delivery Time: | 1-4Work Days |
| Packaging Details: | Original factory sealed packing with standard types: tube,tray,tape and reel,box,bag packing. Or request for your need. |
| Detailed Description: | MOSFET N-CH 100V 700MA SOT23-3 |
| Product Status: | Active |
| Package / Case: | SOT-23-3 |
| Technology: | MOSFET (Metal Oxide) |
| Power Dissipation (Max): | 625mW (Ta) |
| Operating Voltage:: | ±20V |
| Operating Temperature:: | -55°C ~ 150°C (TJ) |
| Base Product Number: | ZXMN10 |
PRODUCT DESCRIPTION
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making
it
ideal for high efficiency power management applications.
PRODUCT PROPERTIES
Product Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100 V |
Current - Continuous Drain (Id) @ 25°C | 700mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Rds On (Max) @ Id, Vgs | 700mOhm @ 1.5A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 2.9 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 138 pF @ 50 V |
FET Feature | - |
Power Dissipation (Max) | 625mW (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SOT-23-3 |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Base Product Number | ZXMN10 |
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