Categories | Infrared Photoelectric Sensor |
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Brand Name: | Hamamatsu |
Model Number: | S2386-44k |
Place of Origin: | Japan |
MOQ: | 5 |
Payment Terms: | L/C, D/A, D/P, T/T, Western Union, MoneyGram |
Supply Ability: | 1501/pcs/pre |
Delivery Time: | 3-5work days |
Packaging Details: | Tubes of |
photographic area is: | 3.6 × 3.6mm |
Number of pixels: | 1 |
Refrigeration and: | Non - cooled |
Encapsulated: | Metal |
encapsulation type is: | to-5 |
Product Description:
S2386-44k Silicon Photodiode Is Highly Sensitive From Visible To Near Infrared Band
Features:
Suitable for visible light to near infrared band, universal photometric determination
Product features
● High sensitivity in visible to near infrared band
● Low dark current
● High reliability
● High linearity
Junction capacitance (typical value) 1600 pF
Measurement condition TYP.TA =25 ℃, Unless otherwise noted,Photosensitivity: λ=960 nm, Dark current: VR=10 mV, Terminal capacitance: VR=0 V, f=10 kHz
Specifications:
Reverse voltage (Max.) | 30 V |
spectral response range is | 320 to 1100 nm |
Peak sensitivity wavelength (typical value) | 960 nm |
Sensitivity (typical value) | 0.6 A/W |
Dark current (maximum) | 20 pA |
Rise time (typical value). | 3.6 u s |
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