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6H Polytype Semi-insulating SiC Substrate , Production Grade , Epi Ready , 2”Size

Categories SiC Wafer
Brand Name: PAM-XIAMEN
Place of Origin: China
MOQ: 1-10,000pcs
Price: By Case
Payment Terms: T/T
Supply Ability: 10,000 wafers/month
Delivery Time: 5-50 working days
name: 6H Semi-Insulating SIC Substrate
Grade: Production grade
Description: Production Grade 6H SEMI Substrate
Carrier Type: Epi Ready
Diameter: (50.8 ± 0.38) mm
Thickness: (250 ± 25) μm (330 ± 25) μm (430 ± 25) μm
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6H Polytype Semi-insulating SiC Substrate , Production Grade , Epi Ready , 2”Size

6H Polytype Semi-insulating SiC Substrate , Production Grade , Epi Ready , 2”Size


PAM-XIAMEN provides high quality single crystal SiC (Silicon Carbide) wafer for electronic and optoelectronic industry. SiC wafer is a next generation semiconductor material with unique electrical properties and excellent thermal properties for high temperature and high power device application. SiC wafer can be supplied in diameter 2~6 inch, both 4H and 6H SiC , N-type , Nitrogen doped , and semi-insulating type available. Please contact us for more information


SILICON CARBIDE MATERIAL PROPERTIES


PolytypeSingle Crystal 4HSingle Crystal 6H
Lattice Parametersa=3.076 Åa=3.073 Å
c=10.053 Åc=15.117 Å
Stacking SequenceABCBABCACB
Band-gap3.26 eV3.03 eV
Density3.21 · 103 kg/m33.21 · 103 kg/m3
Therm. Expansion Coefficient4-5×10-6/K4-5×10-6/K
Refraction Indexno = 2.719no = 2.707
ne = 2.777ne = 2.755
Dielectric Constant9.69.66
Thermal Conductivity490 W/mK490 W/mK
Break-Down Electrical Field2-4 · 108 V/m2-4 · 108 V/m
Saturation Drift Velocity2.0 · 105 m/s2.0 · 105 m/s
Electron Mobility800 cm2/V·S400 cm2/V·S
hole Mobility115 cm2/V·S90 cm2/V·S
Mohs Hardness~9~9

6H Semi-Insulating SiC Substrate, Production Grade, Epi Ready,2”Size


SUBSTRATE PROPERTYS6H-51-SI-PWAM-250 S6H-51-SI-PWAM-330 S6H-51-SI-PWAM-430
DescriptionProduction Grade 6H SEMI Substrate
Polytype6H
Diameter(50.8 ± 0.38) mm
Thickness(250 ± 25) μm (330 ± 25) μm (430 ± 25) μm
Resistivity (RT)>1E5 Ω·cm
Surface Roughness< 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish)
FWHM<30 arcsec <50 arcsec
Micropipe DensityA+≤1cm-2 A≤10cm-2 B≤30cm-2 C≤50cm-2 D≤100cm-2
Surface Orientation
On axis <0001>± 0.5°
Off axis 3.5° toward <11-20>± 0.5°
Primary flat orientationParallel {1-100} ± 5°
Primary flat length16.00 ± 1.70 mm
Secondary flat orientation Si-face:90° cw. from orientation flat ± 5°
C-face:90° ccw. from orientation flat ± 5°
Secondary flat length8.00 ± 1.70 mm
Surface FinishSingle or double face polished
PackagingSingle wafer box or multi wafer box
Usable area≥ 90 %
Edge exclusion1 mm

Single crystal SiC Properties

Here we compare property of Silicon Carbide, including Hexagonal SiC,CubicSiC,Single crystal SiC.

Property of Silicon Carbide (SiC)

Comparision of Property of Silicon Carbide, including Hexagonal SiC,Cubic SiC,Single crystal SiC:

PropertyValueConditions
Density3217 kg/m^3hexagonal
Density3210 kg/m^3cubic
Density3200 kg/m^3Single crystal
Hardness,Knoop(KH)2960 kg/mm/mm100g,Ceramic,black
Hardness,Knoop(KH)2745 kg/mm/mm100g,Ceramic,green
Hardness,Knoop(KH)2480 kg/mm/mmSingle crystal.
Young's Modulus700 GPaSingle crystal.
Young's Modulus410.47 GPaCeramic,density=3120 kg/m/m/m, at room temperature
Young's Modulus401.38 GPaCeramic,density=3128 kg/m/m/m, at room temperature
Thermal conductivity350 W/m/KSingle crystal.
Yield strength21 GPaSingle crystal.
Heat capacity1.46 J/mol/KCeramic,at temp=1550 C.
Heat capacity1.38 J/mol/KCeramic,at temp=1350 C.
Heat capacity1.34 J/mol/KCeramic,at temp=1200 C.
Heat capacity1.25 J/mol/KCeramic,at temp=1000 C.
Heat capacity1.13 J/mol/KCeramic,at temp=700 C.
Heat capacity1.09 J/mol/KCeramic,at temp=540 C.
Electrical resistivity1 .. 1e+10 Ω*mCeramic,at temp=20 C
Compressive strength0.5655 .. 1.3793 GPaCeramic,at temp=25 C
Modulus of Rupture0.2897 GPaCeramic,with 1 wt% B addictive
Modulus of Rupture0.1862 GPaCeramifc,at room temperature
Poisson's Ratio0.183 .. 0.192Ceramic,at room temperature,density=3128 kg/m/m/m
Modulus of Rupture0.1724 GPaCeramic,at temp=1300 C
Modulus of Rupture0.1034 GPaCeramic,at temp=1800 C
Modulus of Rupture0.07586 GPaCeramic,at temp=1400 C
Tensile strength0.03448 .. 0.1379 GPaCeramic,at temp=25 C

Comparision of Property of single crystal SiC, 6H and 4H:


PropertySingle Crystal 4HSingle Crystal 6H
Lattice Parametersa=3.076 Åa=3.073 Å
c=10.053 Åc=15.117 Å
Stacking SequenceABCBABCACB
Band-gap3.26 eV3.03 eV
Density3.21 · 103 kg/m33.21 · 103 kg/m3
Therm. Expansion Coefficient4-5×10-6/K4-5×10-6/K
Refraction Indexno = 2.719no = 2.707
ne = 2.777ne = 2.755
Dielectric Constant9.69.66
Thermal Conductivity490 W/mK490 W/mK
Break-Down Electrical Field2-4 · 108 V/m2-4 · 108 V/m
Saturation Drift Velocity2.0 · 105 m/s2.0 · 105 m/s
Electron Mobility800 cm2/V·S400 cm2/V·S
hole Mobility115 cm2/V·S90 cm2/V·S
Mohs Hardness~9~9

Comparision of property of 3C-SiC,4H-SiC and 6H-SiC:


Si-C Polytype3C-SiC4H-SiC6H-SiC
Crystal structureZinc blende (cubic)Wurtzite ( Hexagonal)Wurtzite ( Hexagonal)
Group of symmetryT2d-F43mC46v-P63mcC46v-P63mc
Bulk modulus2.5 x 1012 dyn cm-22.2 x 1012 dyn cm-22.2 x 1012 dyn cm-2
Linear thermal expansion coefficient2.77 (42) x 10-6 K-1  
Debye temperature1200 K1300 K1200 K
Melting point3103 (40) K3103 ± 40 K3103 ± 40 K
Density3.166 g cm-33.21 g cm-33.211 g cm-3
Hardness9.2-9.39.2-9.39.2-9.3
Surface microhardness2900-3100 kg mm-22900-3100 kg mm-22900-3100 kg mm-2
Dielectric constant (static)ε0 ~= 9.72The value of 6H-SiC dielectric constant is usually usedε0,ort ~= 9.66
Infrared refractive index~=2.55~=2.55 (c axis)~=2.55 (c axis)
Refractive index n(λ)n(λ)~= 2.55378 + 3.417 x 104·λ-2n0(λ)~= 2.5610 + 3.4 x 104·λ-2n0(λ)~= 2.55531 + 3.34 x 104·λ-2
ne(λ)~= 2.6041 + 3.75 x 104·λ-2ne(λ)~= 2.5852 + 3.68 x 104·λ-2
Radiative recombination coefficient1.5 x 10-12 cm3/s1.5 x 10-12 cm3/s
Optical photon energy102.8 meV104.2 meV104.2 meV
Effective electron mass (longitudinal)ml0.68mo0.677(15)mo0.29mo
Effective electron mass (transverse)mt0.25mo0.247(11)mo0.42mo
Effective mass of density of states mcd0.72mo0.77mo2.34mo
Effective mass of the density of states in one valley of conduction band mc0.35mo0.37mo0.71mo
Effective mass of conductivity mcc0.32mo0.36mo0.57mo
Effective hall mass of density of state mv?0.6 mo~1.0 mo~1.0 mo
Lattice constanta=4.3596 Aa = 3.0730 Aa = 3.0730 A
b = 10.053b = 10.053

FAQ

Question: I am looking for single crystals of SiC 3C 2H 4H 6H and 15R polytypes with the crystallographic direction along 0001, thickness around 330 micrometer and wafer diameter between 2 cm -6 cm, Could you please send me the information about the dimensions and if you have other polytypes of SiC also include them in the quote?


Answer:4H and 6H SiC is commercialized, which we can offer you understand C(0001) accordingly, for 2H or 15R SiC, we can not offer, as it is not commercial value.


SiC 4H and SiC 6H manufacturer reference:PAM-XIAMEN is the world’s leading developer of solid-state lighting technology,he offer a full line: Sinlge crystal SiC wafer and epitaxial wafer and SiC wafer reclaim


Wafer Diameter

The linear distance across the surface of a circular slice which contains the slice center and excludes any flats or other peripheral fiduciary areas. Standard silicon wafer diameters are: 25.4mm (1"), 50.4mm (2"), 76.2mm (3"), 100mm (4"), 125mm(5"), 150mm (6"), 200mm (8"), and 300mm (12").

The linear dimension across the surface of a wafer. Measurement is performed manually with ANSI certied digital calipers on each individual wafer.


Wafer Thickness, Center Point

Thin (thickness depends on wafer diameter, but is typically less than 1mm),circular slice of single-crystal semiconductor material cut from the ingot of single crystal semiconductor; used in manufacturing of semiconductor devices and integrated circuits; wafer diameters may range from 5mm to 300mm.

Measured with ANSI certied non-contact tools at the center of each individual wafer.

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