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RD06HVF1 MOS FET type transistor low power mosfet high voltage power mosfet

Categories Power Mosfet Transistor
Brand Name: MITSUBISHI
Model Number: RD06HVF1
Certification: Original Factory Pack
Place of Origin: Original
MOQ: 50pcs
Price: negotiation
Payment Terms: T/T, Western Union,PayPal
Supply Ability: 5200PCS
Delivery Time: 1 day
Packaging Details: please contact me for details
Drain to source voltage: 50 V
Gate to source voltage: +/- 20 V
Channel dissipation: 27.8 W
Input power: 0.6 W
Drain current: 3 A
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RD06HVF1 MOS FET type transistor low power mosfet high voltage power mosfet


RD06HVF1 MOS FET type transistor low power mosfet high voltage power mosfet


DESCRIPTION

RD06HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.


FEATURES High power gain:

Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz


APPLICATION For output stage of high power amplifiers in VHF band mobile radio sets.


RoHS COMPLIANT

RD06HVF1-101 is a RoHS compliant products. RoHS compliance is indicate by the letter “G” after the lot marking.


This product include the lead in high melting temperature type solders. How ever,it applicable to the following exceptions of RoHS Directions. 1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)



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