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... Polarity: P-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 60 V Id - Continuous Drain Current: 2.5 A Rds On - Drain-Source Resistance: 95 ...
... Polarity: P-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 60 V Id - Continuous Drain Current: 2.5 A Rds On - Drain-Source Resistance: 95 ... more
Brand Name:ON Semiconductor
Model Number:NDT2955
Certification:ISO9001
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...,is IGBT Modules.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “...
...,is IGBT Modules.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “... more
Package ::MOUDLE
Packaging ::Box
Product Category ::IGBT Modules
MG150Q2YS50
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Toshiba Integrated Circuits TPC8065-H Electronics Professional IC Chips Stock TPC8065-H Product Paramenters Manufacturer: TOSHIBA Semiconductor Inc. Goods situation In stock-can ship immediately Part Number TPC8065-H Package Tape & Reel (TR) Technology MOSFET (Metal Oxide) Product Status Obsolete Description MOSFET N-CH 600V 40MA SOT23-3 Drain to Source Voltage (Vdss) 600 V Detailed Description N-Channel...
Toshiba Integrated Circuits TPC8065-H Electronics Professional IC Chips Stock TPC8065-H Product Paramenters Manufacturer: TOSHIBA Semiconductor Inc. Goods situation In stock-can ship immediately Part Number TPC8065-H Package Tape & Reel (TR) Technology MOSFET (Metal Oxide) Product Status Obsolete Description MOSFET N-CH 600V 40MA SOT23-3 Drain to Source Voltage (Vdss) 600 V Detailed Description N-Channel... more
Brand Name:TOSHIBA
Model Number:TPC8065-H
Place of Origin:JAPAN
TPC8065-H Toshiba Ics Electronics Professional Toshiba Semiconductor
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...) Product Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20 V Current - Continuous Drain (Id) @ 25°C 500mA (...
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Automotive IGBT Modules MSC100SM70JCU3 N-Channel IGBT Silicon Carbide Modules 365W Product Description Of MSC100SM70JCU3 MSC100SM70JCU3 is Silicon carbide (SiC) Schottky diode, a buck chopper ...
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TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J121 High Power Switching Applications Fast Switching Applications • The 4th generation • Enhancement-mode • Fast switching (FS): ...
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74HC595D IC SHIFT REGISTER 8BIT 16SOP Toshiba Semiconductor and Storage Product Details General description The 74HC595; 74HCT595 is an 8-bit serial-in/serial or parallel-out shift register with a storage register and 3-state ...
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256 Channels with Toshiba Camera PET ABS PVC Scrap Plastic Flakes Color Sorting Machine When color sorter is working, feed hopper in the ...
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Discover the Pros and Cons of IRG4IBC30S Before Investing Your Money Is IRG4IBC30S the Right Choice for Your Electronics Needs? If you're looking for a powerful Insulated Gate Bipolar Transistor (IGBT) for your electronic projects, you may have heard of ...
Discover the Pros and Cons of IRG4IBC30S Before Investing Your Money Is IRG4IBC30S the Right Choice for Your Electronics Needs? If you're looking for a powerful Insulated Gate Bipolar Transistor (IGBT) for your electronic projects, you may have heard of ... more
Brand Name:Infineon
Model Number:IRG4IBC30S
Part number:IRG4IBC30S
IRG4IBC30S 1.7V Transistor Bipolar IGBT , TO-220 N Channel IGBT Transistor
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RJH60F7ADPK Silicon N Channel IGBT High Speed Power Switching Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15V, Ta = 25°C) Built in fast recovery diode in one package Trench gate and thin wafer technology...
RJH60F7ADPK Silicon N Channel IGBT High Speed Power Switching Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15V, Ta = 25°C) Built in fast recovery diode in one package Trench gate and thin wafer technology... more
Model Number:RJH60F7ADPK
Place of Origin:original factory
RJH60F7ADPK-00#T0 Power Mosfet Transistor Silicon N Channel IGBT Transistor
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PMZ390 Discrete Semiconductor Transistors - FETs N-Channel 30 V 900mA (Ta) 350mW (Ta), 5.43W (Tc) Surface Mount SOT PRODUCT DESCRIPTION Part number PMZ390UNEYL is manufactured by NXP and distributed by Stjk. As one of the leading distributors of electronic...
PMZ390 Discrete Semiconductor Transistors - FETs N-Channel 30 V 900mA (Ta) 350mW (Ta), 5.43W (Tc) Surface Mount SOT PRODUCT DESCRIPTION Part number PMZ390UNEYL is manufactured by NXP and distributed by Stjk. As one of the leading distributors of electronic... more
Brand Name:NXP
Model Number:PMZ390UNEYL
Place of Origin:China
FETs N Channel PMZ390 Discrete Semiconductor Devices 30V 900mA 350mW 5.43W
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FDC6561AN / SSOT-6 / Discrete Semiconductors These N−Channel Logic Level MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain ...
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AONR21321 MOSFET Power Electronics P-Channel 30V Discrete Semiconductor Package 8-DFN-EP FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 24A (...
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IRFZ44NPBF TO-220 N-Channel Mosfet Transistor Semiconductors IC Chips Product Description of Integrated Circuit: The IRFZ44NPBF MOSFET is designed for high-power applications and features a low on-resistance and fast switching characteristics. It has a ...
IRFZ44NPBF TO-220 N-Channel Mosfet Transistor Semiconductors IC Chips Product Description of Integrated Circuit: The IRFZ44NPBF MOSFET is designed for high-power applications and features a low on-resistance and fast switching characteristics. It has a ... more
Description:MOSFET MOSFT 55V 49A 17.5mOhm 42nC
Stock:300000
Minimum Order Quantity:10pcs
IRFZ44NPBF TO-220 N-Channel Mosfet Transistor Semiconductors IC Chips
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IXYS High Frequency Thyristor IGBT Discrete Semiconductor Module MCC44-14IO8B IXYS Discrete Semiconductor Modules 44 Amp Product Name IXYS IGBT Module Part number MCC4414IO8B MCC44-14I08B Manufacturer brand IXYS Description IXYS High Frequency Thyristor ...
IXYS High Frequency Thyristor IGBT Discrete Semiconductor Module MCC44-14IO8B IXYS Discrete Semiconductor Modules 44 Amp Product Name IXYS IGBT Module Part number MCC4414IO8B MCC44-14I08B Manufacturer brand IXYS Description IXYS High Frequency Thyristor ... more
Brand Name:Mitsubishi
Model Number:MCC44-14IO8B
Place of Origin:Japan
MCC44-14IO8B IGBT Discrete Semiconductor Module IXYS High Frequency Thyristor
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Dua Channel IGBT Driver SCALETM-2+IGBT and MOSFET Driver Core Q1. What is your terms of packing? A: Generally, we pack our goods in neutral white boxes and brown cartons. If you have legally registered patent, we can pack the goods in your branded boxes...
Dua Channel IGBT Driver SCALETM-2+IGBT and MOSFET Driver Core Q1. What is your terms of packing? A: Generally, we pack our goods in neutral white boxes and brown cartons. If you have legally registered patent, we can pack the goods in your branded boxes... more
Brand Name:Power Integrations
Model Number:2SC0435T2G1-17
Place of Origin:TH
Dua Channel IGBT Driver SCALETM-2 IGBT And MOSFET Driver Core IGBT Transistor
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CSD17551Q3A 17551 SON8 1 N-Channel MOSFETSemiconductor chip Our Advantage Inventory P/N BRAND QTY P/N BRAND QTY P/N BRAND QTY L6566BH ST 2000 TJA1051TK/3,118 NXP 6000 S912ZVL64F0VLF NXP 5000 STM32F417ZGT6 ST 360 TJA1051T/CM NXP 40000 FS32K116LIT0VFM NXP ...
CSD17551Q3A 17551 SON8 1 N-Channel MOSFETSemiconductor chip Our Advantage Inventory P/N BRAND QTY P/N BRAND QTY P/N BRAND QTY L6566BH ST 2000 TJA1051TK/3,118 NXP 6000 S912ZVL64F0VLF NXP 5000 STM32F417ZGT6 ST 360 TJA1051T/CM NXP 40000 FS32K116LIT0VFM NXP ... more
Brand Name:Original
Model Number:CSD17551Q3A
Minimum Order Quantity:10pcs
17551 SON8 TVS Diode N Channel Power MOSFET Semiconductor Chip CSD17551Q3A
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K75T60 IKW75N60T automotive N-channel IGBT TO-247 ROHS original new condition We are a company prefessinal in automotive component,hope can help you in the future! Fell free contact us if you are interested in this P/N: ...
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...CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) Description: High power switching applications motor control application. Applications: High input impcdonce High speed : Tf =0.5us(Max) Trr = 0.5us(Max) Low saturation voltage: Vce(sat) = 4.0V(Max) Enhancement-Mode The electrodes are isolated from case. Specifications: part no. MG500Q1US1 Manufacturer Toshiba Semiconductor...
...CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) Description: High power switching applications motor control application. Applications: High input impcdonce High speed : Tf =0.5us(Max) Trr = 0.5us(Max) Low saturation voltage: Vce(sat) = 4.0V(Max) Enhancement-Mode The electrodes are isolated from case. Specifications: part no. MG500Q1US1 Manufacturer Toshiba Semiconductor... more
Brand Name:Toshiba Semiconductor
Model Number:MG500Q1US1
Place of Origin:PHILIPPINE
MG500Q1US1 - Toshiba Semiconductor - N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
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